S2 1 G2 2 G1 4. RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9358PbF SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4000
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1 P 9766 HEXFET Power MOSFET V S 3 V R S(on) max (@V GS = V) 6.3 mω S2 G R S(on) max (@V GS = 4.5V) 23.8 mω Q g (typical) 9 nc I (@T = 25 C) S 3 G SO8 9.2 pplications Charge and ischarge Switch for Notebook PC Battery pplication Features and Benefits Features IndustryStandard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen results in Resulting Benefits MultiVendor Compatibility Environmentally Friendlier Orderable part number Package Type Standard Pack Form Quantity SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4 Note bsolute Maximum Ratings V S V GS T = 25 C T = 7 C I M = 25 C = 7 C T J T STG Parameter raintosource Voltage GatetoSource Voltage Continuous rain Current, V V Continuous rain Current, V V Pulsed rain Current c Power issipation f Power issipation f Linear erating Factor Operating Junction and Storage Temperature Range Max. 3 ± to 5 Units V W W/ C C Notes through are on page 2 /2/
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS raintosource Breakdown Voltage 3 V V GS = V, I = 25μ ΔΒV SS /ΔT J Breakdown Voltage Temp. Coefficient.2 V/ C Reference to 25 C, I = m R S(on) V GS = V, I = 9.2 e Static raintosource OnResistance mω V GS = 4.5V, I = 7.3 e V GS(th) Gate Threshold Voltage V V S = V GS, I = 25μ ΔV GS(th) Gate Threshold Voltage Coefficient 5.9 mv/ C I SS raintosource Leakage Current. V S = 24V, V GS = V μ 5 V S = 24V, V GS = V, T J = 25 C I GSS GatetoSource Forward Leakage V GS = 2V n GatetoSource Reverse Leakage V GS = 2V gfs Forward Transconductance 23 S V S = V, I = 7.3 Q g Total Gate Charge h 9 nc V S = 5V, V GS = 4.5V, I = 7.3 Q g Total Gate Charge h 38 V GS = V Q gs GatetoSource Charge h 5.8 nc V S = 5V Q gd Gatetorain Charge h 8.9 I = 7.3 R G Gate Resistance h 5 Ω t d(on) TurnOn elay Time 5.7 V = 5V, V GS = 4.5V e t r Rise Time 7.2 I =. ns t d(off) TurnOff elay Time 46 R G = 6.8Ω t f Fall Time 69 See Figs. 9a &9b C iss Input Capacitance 74 V GS = V C oss Output Capacitance 36 pf V S = 25V C rss Reverse Transfer Capacitance 24 ƒ =.MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 2 mj I R valanche Current c 7.3 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current (Body iode) 2. I SM Pulsed Source Current (Body iode)c 73 V S iode Forward Voltage.2 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Thermal Resistance R θjl R θj Parameter Junctiontorain Lead g Junctiontombient f Typ. MOSFET symbol showing the integral reverse pn junction diode. Conditions T J = 25 C, I S = 2., V GS = V e T J = 25 C, I F = 2., V = 24V di/dt = /μs e Max G Units C/W S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 4.6mH, R G = 25Ω, I S = 6.4. ƒ Pulse width 4μs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 9 C. For ESIGN I ONLY, not subject to production testing. 2
3 C, Capacitance(pF) V GS, GatetoSource Voltage (V) I, raintosource Current () R S(on), raintosource On Resistance (Normalized) I, raintosource Current () I, raintosource Current () VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.V 2.7V BOTTOM 2.5V VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.V 2.7V BOTTOM 2.5V. 2.5V 6μs PULSE WITH Tj = 25 C.. V S, raintosource Voltage (V) Fig. Typical Output Characteristics T J = 5 C 2.5V 6μs PULSE WITH Tj = 5 C.. V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics I = 9.2 V GS = V T J = 25 C. V S = 5V 6μs PULSE WITH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C iss I = 7.3 V S = 24V V S = 5V V S = 6.V C oss 6 C rss Q G Total Gate Charge (nc) V S, raintosource Voltage (V) Fig 5. Typical Capacitance vs.raintosource Voltage Fig 6. Typical Gate Charge vs.gatetosource Voltage 3
4 V GS(th), I, rain Current () Gate threshold Voltage (V) I S, Reverse rain Current () I, raintosource Current () OPERTION IN THIS RE LIMITE BY R S (on) T J = 5 C T J = 25 C C msec msec V GS = V V S, Sourcetorain Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea 2.5 T = 25 C Tj = 5 C Single Pulse.. V S, raintosource Voltage (V) 8 2. I = 25μ T, mbient Temperature ( C) Fig 9. Maximum rain Current vs. mbient Temperature T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thj ) C/W = SINGLE PULSE ( THERML RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja T. E6 E5.... t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient 4
5 E S, Single Pulse valanche Energy (mj) Single Pulse Power (W) R S(on), rainto Source On Resistance (mω) R S (on), rainto Source On Resistance (mω) 5 I = T J = 25 C 3 V GS = 4.5V T J = 25 C 2 V GS = V V GS, Gate to Source Voltage (V) Fig 2. OnResistance vs. Gate Voltage I, rain Current () Fig 3. Typical OnResistance vs. rain Current 8 6 I TOP.9.5 BOTTOM Starting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy vs. rain Current E5 E4 E3 E2 E E Time (sec) Fig 5. Typical Power vs. Time.U.T * ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V Repplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * Reverse Polarity of.u.t for PChannel * V GS = 5V for Logic Level evices Fig 6. iode Reverse Recovery Test Circuit for PChannel HEXFET Power MOSFETs 5
6 Id Vds Vgs 2K K S UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 7a. Gate Charge Test Circuit Fig 7b. Gate Charge Waveform V S L I S R G.U.T V V 2V GS tp IS.Ω RIVER tp V (BR)SS 5V Fig 8a. Unclamped Inductive Test Circuit Fig 8b. Unclamped Inductive Waveforms R V S R G V GS.U.T. V GS t d(on) t r t d(off) t f % V V GS Pulse Width µs uty Factor. % 9% V S Fig 9a. Switching Time Test Circuit Fig 9b. Switching Time Waveforms 6
7 SO8 Package Outline(Mosfet & Fetky) imensions are shown in milimeters (inches) E 6 6X e B H.25 [.] IM b E e e H K L y INCHES MIN MX BSIC.27 BSIC.25 BSIC.635 BSIC MILLIMET ERS MIN MX c e C y K x 45 8X b.25 [.] C B. [.4] 8X L 7 8X c FOOTPRINT NOTES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS2. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE.5 [.6]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE.25 [.]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE. SO8 Part Marking Information 6.46 [.255] 3X.27 [.5] 8X.72 [.28] 8X.78 [.7] EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 T E COE (YWW) P = ISGNTES LE FREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEE K = S S E MB LY S IT E COE LOT COE PRT NUMBER Note: For the most current drawing please refer to IR website at 7
8 SO8 Tape and Reel (imensions are shown in milimeters (inches)) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI (.566 ) 2.4 (.488 ) Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant Consumer (per JEEC JES47F guidelines) MSL SO8 (per JEEC JST2 ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: pplicable version of JEEC standard at the time of product release. ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information./2 8
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Generation V Technology l l Ultra Low OnResistance l PChannel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
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More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Surface Mount (IRF9Z34NS) l Lowprofile throughhole (IRF9Z34NL) l 175 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription G P 9.1525 IRF9Z34NS/L
More informationIRF9910PbF HEXFET Power MOSFET R DS(on) max
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More informationIRF6645 DirectFET Power MOSFET
Typical R S (on) (mω), Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationIRLMS6702. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.20Ω. Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET
P 9.44B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) PChannel MOSFET 2 6 5 V SS = 20V escription Fifth Generation HEXFETs from International Rectifier
More information1 SO-8 Top View Package Standard Pack EOL Base part number IRF7404QTRPbF SO-8 Tape and Reel 4000 EOL 527 IRF7404QPbF SO-8 Tube 95 EOL 529
EN OF LIFE HEXFET Power MOSFET dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree escription These HEXFET Power MOSFET's
More informationIRF6710S2TRPbF IRF6710S2TR1PbF
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (
More informationIRF6215PbF HEXFET Power MOSFET
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
More informationAUTOMOTIVE GRADE. Top View
UTOMOTIVE GRE UIRF7207Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P-Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationV DSS V GS R DS(on) R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationIndustry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques
IRF794PbF HEXFET Power MOSFET V DS 3 V R DS(on) max Q (@V GS = V).2 R DS(on) max Q2 (@V GS = V).8 Q g (typical) Q 7.5 Q g (typical) Q2 4 I D(@TA = 25 C)Q 7. I D(@TA = 25 C)Q2 mω nc A G S2 S2 G2 2 3 4 8
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationAUTOMOTIVE GRADE. Orderable Part Number AUIRF7416Q SO-8 Tape and Reel 4000 AUIRF7416QTR
UTOMOTIVE GRE UIRF746Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRF4905. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.02Ω I D = -74A. Thermal Resistance PD C
l dvanced Process Technology l Ultra Low OnResistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription Fifth Generation HEXFETs from International
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationIRF6609. HEXFET Power MOSFET V DSS R DS(on) max Qg. 20V GS = 10V 46nC GS = 4.5V
l Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (
More informationmj I AR Avalanche Currentg 7.6
Typical R DS (on) (mω), Gate-to-Source Voltage (V) l RoHS Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch
More informationAUTOMOTIVE GRADE A I DM P C = 25 C Power Dissipation 200 Linear Derating Factor. V/ns T J. Thermal Resistance Parameter Typ. Max.
UTOMOTIVE GRE P 96338 Features l dvanced Planar Technology l Low OnResistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Repetitive valanche llowed up
More informationV DSS R DS(on) max I D. 20V GS = 10V 8.9A. 71 P A = 25 C Power Dissipation 2.0 P A = 70 C Power Dissipation Linear Derating Factor
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
More informationLinear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 P- 94243 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω
More informationParameter Maximum Units
l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM
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Typical R S(on) (mω) V S, ate-to-source Voltage (V) l RoHS Compliant and Halogen Free l Low Profile (
More informationAUTOMOTIVE MOSFET P C = 25 C Power Dissipation 110 Linear Derating Factor
UTOMOTIVE MOSFET Features l dvanced Planar Technology l Low OnResistance l ynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully valanche Rated l Repetitive valanche llowed up to Tjmax
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationIRF6668PbF IRF6668TRPbF
Typical R DS(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
More informationThermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambient 100 C/W
P - 95345 Generation V Technoogy Urtra Low On-Resistance ua N-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationD 2 Pak TO
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
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