mj I AR Avalanche Currentc 22 Linear Derating Factor

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1 P 95823C IRF6620 l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l ual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques HEXFET Power MOSFET V SS R S(on) max Qg(typ.) 20V 2.7mΩ@V GS = V 28nC 3.6mΩ@V GS = 4.5V MX irectfet ISOMETRIC pplicable irectfet Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT escription The IRF6620 combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest onstate resistance in a package that has the footprint of an SO8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note N35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency CC converters that power the latest generation of processors operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dtinduced turn on immunity. The IRF6620 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. bsolute Maximum Ratings Parameter Max. Units V S raintosource Voltage 20 V V GS GatetoSource Voltage ±20 T C = 25 C Continuous rain Current, V V f 150 T = 25 C Continuous rain Current, V V f 27 T = 70 C Continuous rain Current, V V i 22 I M Pulsed rain Current c 220 = 25 C Power issipation f 2.8 = 70 C Power issipation f 1.8 W C = 25 C Power issipation i 89 E S Single Pulse valanche Energyd 39 mj I R valanche Currentc 22 Linear erating Factor W/ C T J Operating Junction and 40 to 150 C T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θj Junctiontombient fj 45 R θj Junctiontombient gj 12.5 R θj Junctiontombient hj 20 C/W R θjc JunctiontoCase ij 1.4 R θjpcb JunctiontoPCB Mounted 1.0 Notes through ˆ are on page /30/05

2 IRF6620 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS raintosource Breakdown Voltage 20 V V GS = 0V, I = 250µ ΒV SS / T J Breakdown Voltage Temp. Coefficient 16 mv/ C Reference to 25 C, I = 1m R S(on) Static raintosource OnResistance mω V GS = V, I = 27 e V GS = 4.5V, I = 22 e V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ V GS(th) / T J Gate Threshold Voltage Coefficient 5.8 mv/ C I SS raintosource Leakage Current 1.0 µ V S = 16V, V GS = 0V 150 V S = 16V, V GS = 0V, T J = 125 C I GSS GatetoSource Forward Leakage 0 n V GS = 20V GatetoSource Reverse Leakage 0 V GS = 20V gfs Forward Transconductance 1 S V S = V, I = 22 Q g Total Gate Charge Q gs1 PreVth GatetoSource Charge 9.5 V S = V Q gs2 PostVth GatetoSource Charge 3.5 nc V GS = 4.5V Q gd Gatetorain Charge 8.8 I = 22 Q godr Gate Charge Overdrive 6.2 See Fig. 15 Q sw Switch Charge (Q gs2 Q gd ) 12 Q oss Output Charge 16 nc V S = V, V GS = 0V t d(on) TurnOn elay Time 18 V = 16V, V GS = 4.5Ve t r Rise Time 80 I = 22 t d(off) TurnOff elay Time 20 ns Clamped Inductive Load t f Fall Time 6.6 C iss Input Capacitance 4130 V GS = 0V C oss Output Capacitance 1160 pf V S = V C rss Reverse Transfer Capacitance 560 ƒ = 1.0MHz iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current@ T C =25 C 1 (Body iode) I SM Pulsed Source Current 220 (Body iode)c V S iode Forward Voltage V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc MOSFET symbol Conditions showing the integral reverse pn junction diode. T J = 25 C, I S = 22, V GS = 0V e T J = 25 C, I F = 22 di/dt = 0/µs e G S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 6mH, R G = 25Ω, I S = 22. ƒ Pulse width 400µs; duty cycle 2%. Surface mounted on 1 in. square Cu board. Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. T C measured with thermal couple mounted to top (rain) of part. ˆ R θ is measured at T J of approximately 90 C. 2

3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I, raintosource Current (Α) R S(on), raintosource On Resistance (Normalized) I, raintosource Current () I, raintosource Current () IRF VGS TOP V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V 00 0 VGS TOP V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V 1 2.7V 2.7V 60µs PULSE WITH Tj = 25 C 1 0 V S, raintosource Voltage (V) Fig 1. Typical Output Characteristics 1 60µs PULSE WITH Tj = 150 C 1 0 V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics I = 27 V GS = V 0.0 T J = 150 C T J = 25 C V S = V 60µs PULSE WITH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature 0000 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 12 I = 20 V S = 20V VS= V Ciss 6 00 Coss 4 Crss Q V S, raintosource Voltage (V) G Total Gate Charge (nc) Fig 5. Typical Capacitance vs.raintosource Voltage Fig 6. Typical Gate Charge vs.gatetosource Voltage 3

4 I, rain Current () V GS(th) Gate threshold Voltage (V) I, raintosource Current () IRF OPERTION IN THIS RE LIMITE BY R S (on) I S, Reverse rain Current () 0.0 T J = 150 C T J = 25 C V GS = 0V V S, Sourcetorain Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage 0 1 Tc = 25 C Tj = 150 C Single Pulse 0µsec 1msec msec V S, raintosource Voltage (V) Fig 8. Maximum Safe Operating rea I = 250µ T J, Junction Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current vs. Case Temperature Fig. Threshold Voltage vs. Temperature 0 Thermal Response ( Z thj ) = SINGLE PULSE ( THERML RESPONSE ) R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri 1E006 1E t 1, Rectangular Pulse uration (sec) R 4 Ri ( C/W) τi (sec) R Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthja Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junctiontombient 4 τ 4 τ 4 τ C τ

5 E S, Single Pulse valanche Energy (mj) IRF I = I TOP BOTTOM 22 R S (on), rainto Source On Resistance ( mω) T J = 125 C 2 T J = 25 C V GS, GatetoSource Voltage (V) Starting T J, Junction Temperature ( C) Fig 12. OnResistance Vs. Gate Voltage Fig 13c. Maximum valanche Energy Vs. rain Current 15V L V S R G V S 20V V GS tp L.U.T IS 0.01Ω RIVER V Fig 13a. Unclamped Inductive Test Circuit V GS Pulse Width < 1µs uty Factor < %.U.T V tp V (BR)SS Fig 14a. Switching Time Test Circuit V S 90% % V GS I S t d(on) t r t d(off) t f Fig 13b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. Fig 14b. Switching Time Waveforms Vds Id 12V.2µF 50KΩ.3µF Vgs.U.T. V S V GS Vgs(th) 3m I G I Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform 5

6 IRF6620.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V Repplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 16. iode Reverse Recovery Test Circuit for NChannel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, MX Outline (Medium Size Can, Xesignation). Please see irectfet application note N35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GTE = RIN S = SOURCE G S S 6

7 IRF6620 irectfet Outline imension, MX Outline (Medium Size Can, Xesignation). Please see irectfet application note N35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. irectfet Part Marking COE B C E F G H J K L M N P IMENSIONS METRIC IMPERIL

8 IRF6620 irectfet Tape & Reel imension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6620). For 00 parts on 7" reel, order IRF6620TR1 COE B C E F G H REEL IMENSIONS STNR OPTION (QTY 4800) TR1 OPTION (QTY 00) METRIC IMPERIL METRIC IMPERIL ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.9/05 8

9 Note: For the most current drawings please refer to the IR website at:

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