IRF6717MPbF IRF6717MTRPbF DirectFET Power MOSFET

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1 Typical R S(on) (m ) V GS, GatetoSource Voltage (V) l RoHs Compliant and Halgen Free l Low Profile (<.7 mm) l ual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core CC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l% Rg tested IRF677MPbF IRF677MTRPbF irectfet Power MOSFET Typical values (unless otherwise specified) P 97345C V SS V GS R S(on) R S(on) 25V max ±2V 4.5V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 46nC 4nC 6.6nC 3nC 35nC.8V pplicable irectfet Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP MX irectfet ISOMETRIC escription The IRF677MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO8 and only.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note N35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 8%. The IRF677MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency CC converters that power the latest generation of processors operating at higher frequencies. The IRF677MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dtinduced turn on immunity. The IRF677MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. bsolute Maximum Ratings Parameter Max. Units V S raintosource Voltage 25 V V GS GatetoSource Voltage ±2 T = 25 C Continuous rain Current, V V e 38 T = 7 C Continuous rain Current, V V e 3 T C = 25 C Continuous rain Current, V V f 22 I M Pulsed rain Current g 3 E S Single Pulse valanche Energy h 29 mj I R valanche Currentg I = 3 T J = 25 C T J = 25 C I = 3 V S = 2V V S = 3V V GS, Gate to Source Voltage (V) Q G Total Gate Charge (nc) Notes: Fig. Typical OnResistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs GatetoSource Voltage Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L =.64mH, R G = 25, I S = //2

2 IRF677MPbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS raintosource Breakdown Voltage 25 V V SS / T J Breakdown Voltage Temp. Coefficient 8 mv/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance m V GS = V, I = 38 i.6 2. V GS = 4.5V, I = 3 i V GS(th) Gate Threshold Voltage V V S = V GS, I = 5μ V GS(th) / T J Gate Threshold Voltage Coefficient 6.7 mv/ C I SS raintosource Leakage Current. μ V S = 2V, V GS = V 5 V S = 2V, V GS = V, T J = 25 C I GSS GatetoSource Forward Leakage n V GS = 2V GatetoSource Reverse Leakage V GS = 2V gfs Forward Transconductance 4 S V S = 3V, I =3 Q g Total Gate Charge Q gs PreVth GatetoSource Charge 4 V S = 3V Q gs2 PostVth GatetoSource Charge 6.6 nc V GS = 4.5V Q gd Gatetorain Charge 4 I = 3 Q godr Gate Charge Overdrive See Fig. 5 Q sw Switch Charge (Q gs2 Q gd ) 2.6 Q oss Output Charge 35 nc V S = 6V, V GS = V R G Gate Resistance t d(on) TurnOn elay Time 25 V = 3V, V GS = 4.5VÃi t r Rise Time 37 I = 3 t d(off) TurnOff elay Time 9 ns R G =.8 t f Fall Time 5 C iss Input Capacitance 675 V GS = V C oss Output Capacitance 7 pf V S = 3V C rss Reverse Transfer Capacitance 73 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 2 Conditions V GS = V, I = 25μ ƒ =.MHz Conditions MOSFET symbol (Body iode) showing the I SM Pulsed Source Current 3 integral reverse (Body iode)ãg pn junction diode. V S iode Forward Voltage. V T J = 25 C, I S = 3, V GS = V i t rr Reverse Recovery Time 27 4 ns T J = 25 C, I F =3 Q rr Reverse Recovery Charge 3 47 nc di/dt = 75/μs i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 4μs; duty cycle 2%. 2

3 bsolute Maximum Ratings IRF677MPbF Parameter Max. Units = 25 C Power issipation e 2.8 W = 7 C Power issipation e.8 C = 25 C Power issipation f 96 T P Peak Soldering Temperature 27 C T J Operating Junction and 4 to 5 Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R J Junctiontombient el 45 R J Junctiontombient jl 2.5 R J Junctiontombient kl 2 C/W R JC JunctiontoCase fl.3 R JPCB JunctiontoPCB Mounted. Linear erating Factor e.22 W/ C Thermal Response ( Z thj ).. = SINGLE PULSE ( THERML RESPONSE ) Notes: uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc. E6 E5.... t, Rectangular Pulse uration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junctiontombient Notes: ˆ Used double sided cooling, mounting pad with large heatsink. Š R is measured at T J of approximately 9 C. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. J J Ci= i Ri Ci= i Ri R R 2 2 R2 R2 R3 R3 3 3 R4 R R5 R R6 R R7 R7 7 7 R8 R8 Ri ( C/W) i (sec) E ƒ Surface mounted on in. square Cu Mounted to a PCB with Mounted on minimum (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air) 3

4 C, Capacitance(pF) Typical R S (on) (m ) I, raintosource Current () Typical R S(on) (Normalized) I, raintosource Current () I, raintosource Current () IRF677MPbF 6μs PULSE WITH Tj = 25 C VGS TOP V 5.V 4.5V 3.5V 3.3V 3.V 2.8V BOTTOM 2.5V 6μs PULSE WITH Tj = 5 C VGS TOP V 5.V 4.5V 3.5V 3.3V 3.V 2.8V BOTTOM 2.5V 2.5V 2.5V. V S, raintosource Voltage (V) Fig 4. Typical Output Characteristics. V S, raintosource Voltage (V) Fig 5. Typical Output Characteristics V S = 5V 6μs PULSE WITH 2. I = 38 V GS = V T J = 5 C T J = 25 C T J = 4 C.5 V GS = 4.5V V GS, GatetoSource Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized OnResistance vs. Temperature C iss V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd Vgs = 3.5V Vgs = 4.V Vgs = 4.5V Vgs = 5.V Vgs = V T J = 25 C C oss 3 C rss 2 V S, raintosource Voltage (V) I, rain Current () Fig 8. Typical Capacitance vs.raintosource Voltage Fig 9. Typical OnResistance vs. rain Current and Gate Voltage 4

5 E S, Single Pulse valanche Energy (mj) I, rain Current () V GS(th), Gate Threshold Voltage (V) I S, Reverse rain Current () I, raintosource Current () IRF677MPbF OPERTION IN THIS RE LIMITE BY R S (on) msec μsec T J = 5 C T J = 25 C T J = 4 C V GS = V V S, Sourcetorain Voltage (V) Fig. Typical Sourcerain iode Forward Voltage 24 Fig. Maximum Safe Operating rea 2.5 C 2μsec msec Ta = 25 C Tj = 5 C Single Pulse... V S, raintosource Voltage (V) I = 5μ T C, Case Temperature ( C) Fig 2. Maximum rain Current vs. Case Temperature T J, Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature I TOP 9 24 BOTTOM Starting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy vs. rain Current 5

6 IRF677MPbF Vds Id Vgs K UT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 5a. Gate Charge Test Circuit Fig 5b. Gate Charge Waveform 5V tp V (BR)SS V S L RIVER V GS R G 2V tp.u.t I S. V I S Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms V GS V S R.U.T. V S 9% R G VV GS V % V GS Pulse Width µs uty Factor t d(on) t r t d(off) t f Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms 6

7 IRF677MPbF.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V Repplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 8. iode Reverse Recovery Test Circuit for NChannel HEXFET Power MOSFETs irectfet Board Footprint, MX Outline (Medium Size Can, Xesignation). Please see irectfet application note N35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GTE = RIN S = SOURCE G S S 7

8 IRF677MPbF irectfet Outline imension, MX Outline (Medium Size Can, Xesignation). Please see N35 for irectfet assembly details and stencil and substrate design recommendations IMENSIONS METRIC IMPERIL COE B MX MX.25.2 C E F G H J K L M N P irectfet Part Marking GTE MRKING LOGO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "LeadFree" Note: For the most current drawing please refer to IR website at 8

9 IRF677MPbF irectfet Tape & Reel imension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 48 parts. (ordered as IRF677MTRPBF). For parts on 7" reel, order IRF677MTRPBF REEL IMENSIONS STNR OPTION (QTY 48) TR OPTION (QTY ) COE B C E F G H METRIC MX IMPERIL MX METRIC MX IMPERIL MX LOE TPE FEE IRECTION NOTE: CONTROLLING IMENSIONS IN MM COE B C E F G H IMENSIONS METRIC MX IMPERIL MX Note: For the most current drawing please refer to IR website at ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information. 6/2 9