IRF6645 DirectFET Power MOSFET

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1 Typical R S (on) (mω), Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l ual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l Compatible with existing Surface Mount Techniques P IRF6645 irectfet Power MOSFET Typical values (unless otherwise specified) V SS R S(on) 0V max ±20V max 28mΩ@ V Q g tot Q gd V gs(th) 4nC 4.8nC 4.0V Applicable irectfet Outline and Substrate Outline (see p.7,8 for details) SJ irectfet ISOMETRIC SH SJ SP MZ MN escription The IRF6645 combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6645 is optimized for primary side bridge topologies in isolated C-C applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated C-C topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated C-C converters. Absolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 0 V Gate-to-Source Voltage ±20 T A = 25 C Continuous rain V e 5.7 T A = 70 C Continuous rain V e 4.5 A T C = 25 C Continuous rain V f 25 I M Pulsed rain Current g 45 E AS Single Pulse Avalanche Energy h 29 mj I AR Avalanche Currentg 3.4 A I = 3.4A 2 I = 3.4A V S = 80V VS= 50V T J = 25 C T J = 25 C , Gate-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L = 5.0mH, R G = 25Ω, I AS = 3.4A. 8/5/05

2 IRF6645 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 0 V = 0V, I = 250µA ΒV SS / T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I = ma R S(on) Static rain-to-source On-Resistance mω = V, I = 5.7A c (th) Gate Threshold Voltage V V S =, I = 50µA (th) / T J Gate Threshold Voltage Coefficient -2 mv/ C I SS rain-to-source Leakage Current 20 µa V S = 0V, = 0V 250 V S = 80V, = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 0 na = 20V Gate-to-Source Reverse Leakage -0 = -20V gfs Forward Transconductance 7.4 S V S = V, I = 3.4A Q g Total Gate Charge 4 20 Q gs Pre-Vth Gate-to-Source Charge 3. V S = 50V Q gs2 Post-Vth Gate-to-Source Charge 0.8 nc = V Q gd Gate-to-rain Charge I = 3.4A Q godr Gate Charge Overdrive 5.3 See Fig. 5 Q sw Switch Charge (Q gs2 Q gd ) 5.6 Q oss Output Charge 7.2 nc V S = 6V, = 0V R G Gate Resistance.0 Ω t d(on) Turn-On elay Time 9.2 V = 50V, = Vc t r Rise Time 5.0 I = 3.4A t d(off) Turn-Off elay Time 8 ns R G =6.2Ω t f Fall Time 5. C iss Input Capacitance 890 = 0V C oss Output Capacitance 80 pf V S = 25V C rss Reverse Transfer Capacitance 40 ƒ =.0MHz C oss Output Capacitance 870 = 0V, V S =.0V, f=.0mhz C oss Output Capacitance 0 = 0V, V S = 80V, f=.0mhz iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 25 (Body iode) A I SM Pulsed Source Current 45 (Body iode)d V S iode Forward Voltage.3 V t rr Reverse Recovery Time 3 47 ns Q rr Reverse Recovery Charge nc MOSFET symbol showing the integral reverse p-n junction diode. G S T J = 25 C, I S = 3.4A, = 0V c T J = 25 C, I F = 3.4A, V = 50V di/dt = 0A/µs c Notes: Pulse width 400µs; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature. 2

3 Absolute Maximum Ratings IRF6645 Parameter Max. Units A = 25 C Power issipation c 3.0 W A = 70 C Power issipation c.4 C = 25 C Power issipation f 42 T P Peak Soldering Temperature 270 C T J Operating Junction and -40 to 50 T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θja Junction-to-Ambient cg 58 R θja Junction-to-Ambient dg 2.5 R θja Junction-to-Ambient eg 20 C/W R θjc Junction-to-Case fg 3.0 R θj-pcb Junction-to-PCB Mounted.0 0 = 0.50 Thermal Response ( Z thja ) SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 3 τ 2 τ 3 Ci= τi/ri Ci= τi/ri E-006 E t, Rectangular Pulse uration (sec) R 4 R 4 τ 4 τ 4 R 5 R Ri ( C/W) τi (sec) τ 5 τ 5 τ A C τ C Notes:. uty Factor = t/t2 2. Peak Tj = Pdm x Zthja Ta Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Surface mounted on in. square Cu, steady state. Used double sided cooling, mounting pad. ƒ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. T C measured with thermocouple incontact with top (rain) of part. R θ is measured at T J of approximately 90 C. Surface mounted on in. square Cu ƒ Mounted to a PCB with ƒ Mounted on minimum board (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air) 3

4 C, Capacitance(pF) I, rain-to-source Current (Α) Typical R S(on) (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) IRF VGS TOP 5V V 8.0V 7.0V BOTTOM 6.0V 0 VGS TOP 5V V 8.0V 7.0V BOTTOM 6.0V 6.0V 6.0V 60µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 60µs PULSE WITH Tj = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics 0 V S = V 60µs PULSE WITH 2.0 I = 5.7A = V T J = 50 C T J = 25 C T J = -40 C , Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C iss = 7.0V = 8.0V = V = 5V T A = 25 C C oss 40 0 C rss Typical R S(on) (mω) V S, rain-to-source Voltage (V) I, rain Current (A) Fig 8. Typical Capacitance vs.rain-to-source Voltage Fig 9. Typical On-Resistance vs. rain Current 4

5 E AS, Single Pulse Avalanche Energy (mj) I, rain Current (A) (th) Gate threshold Voltage (V) I, rain-to-source Current (A) IRF6645 I S, Reverse rain Current (A) 0.0 T J = 50 C T J = 25 C T.0 J = -40 C.0 = 0V V S, Source-to-rain Voltage (V) Fig. Typical Source-rain iode Forward Voltage 00 0 T A = 25 C Tj = 50 C Single Pulse OPERATION IN THIS AREA LIMITE BY R S (on) 0µsec msec msec V S, rain-tosource Voltage (V) Fig. Maximum Safe Operating Area I =.0A I =.0mA I = 250µA I = 50µA T J, Ambient Temperature ( C) Fig 2. Maximum rain Current vs. Ambient Temperature I TOP.5A 2.4A BOTTOM 3.4A T J, Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature Starting T J, Junction Temperature ( C) Fig 4. Maximum Avalanche Energy vs. rain Current 5

6 IRF6645 Current Regulator Same Type as.u.t. Vds Id 2V.2µF 50KΩ.3µF Vgs.U.T. V - S Vgs(th) 3mA I G I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 5a. Gate Charge Test Circuit Fig 5b. Gate Charge Waveform V (BR)SS 5V tp V S L RIVER R G 20V tp.u.t I AS 0.0Ω - V A I AS Fig 6b. Unclamped Inductive Test Circuit Fig 6c. Unclamped Inductive Waveforms V S R V S 90%.U.T. R G - V % V Pulse Width µs t d(on) t r t d(off) t f uty Factor 0. % Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms 6

7 IRF U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-Applied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * = 5V for Logic Level evices Fig 8. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, SJ Outline (Small Size Can, J-esignation). Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G S S G = GATE = RAIN S = SOURCE 7

8 IRF6645 irectfet Outline imension, SJ Outline (Small Size Can, J-esignation). Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE A B C E F G H K L M N P IMENSIONS METRIC IMPERIAL MIN MAX MIN ÃMAX irectfet Part Marking 8

9 irectfet Tape & Reel imension (Showing component orientation). IRF6645 NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6645). For 00 parts on 7" reel, order IRF6645TR REEL IMENSIONS STANAR OPTION (QTY 4800) TR OPTION (QTY 00) METRIC IMPERIAL METRIC IMPERIAL COE MIN MAX MIN MAX MIN MAX MIN MAX A N.C N.C N.C 6.9 N.C B 20.2 N.C N.C 9.06 N.C 0.75 N.C C N.C N.C.5 N.C N.C E 0.0 N.C N.C N.C 2.3 N.C F N.C 8.4 N.C N.C 3.50 N.C 0.53 G N.C H N.C NOTE: CONTROLLING IMENSIONS IN MM MIN IMENSIONS METRIC MAX N.C.60 IMPERIAL MAX N.C ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.08/05 9

10 Note: For the most current drawings please refer to the IR website at: