I, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)

Transcription

1 l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247C package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 247C contribute to its wide acceptance throughout the industry. G P IRFP370PbF HEXFET Power MOSFET S V SS = 00V R S(on) = 0.025Ω I = 57 TO-247C bsolute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V 0V 57 T C = 00 C Continuous rain Current, V 0V 40 I M Pulsed rain Current 80 C = 25 C Power issipation 200 W Linear erating Factor.3 W/ C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy 530 mj I R valanche Current 28 E R Repetitive valanche Energy 20 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew 0 lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.75 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 5/26/05

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 00 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance Ω V GS = 0V, I = 28 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 20 S V S = 25V, I = 28 I SS rain-to-source Leakage Current 25 V µ S = 00V, V GS = 0V 250 V S = 80V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 20V n Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Total Gate Charge 90 I = 28 Q gs Gate-to-Source Charge 26 nc V S = 80V Q gd Gate-to-rain ("Miller") Charge 82 V GS = 0V, See Fig. 6 and 3 t d(on) Turn-On elay Time 4 V = 50V t r Rise Time 59 I = 28 ns t d(off) Turn-Off elay Time 58 R G = 2.5Ω t f Fall Time 48 R =.7Ω, See Fig. 0 Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 3000 V GS = 0V C oss Output Capacitance 640 pf V S = 25V C rss Reverse Transfer Capacitance 330 ƒ =.0MHz, See Fig. 5 S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 57 (Body iode) showing the G I SM Pulsed Source Current integral reverse 80 (Body iode) p-n junction diode. S V S iode Forward Voltage.3 V T J = 25 C, I S = 28, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 28 Q rr Reverse RecoveryCharge µc di/dt = 00/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L =.4mH R G = 25Ω, I S = 28. (See Figure 2) ƒ I S 28, di/dt 460/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2%.

3 I, rain-to-source Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to-source Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 25 C V S, rain-to-source Voltage (V) 20µs PULSE WITH T C = 75 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 00 0 T = 25 C J T = 75 C J V S = 50V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) I = 46 V GS = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

4 C, Capacitance (pf) 6000 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd 5000 C oss = C ds Cgd C iss C oss 2000 C rss V S, rain-to-source Voltage (V) V, Gate-to-Source Voltage (V) GS I = 28 V S = 80V V S = 50V V S = 20V FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V V S, Source-to-rain Voltage (V) I, rain Current () OPERTION IN THIS RE LIMITE BY RS(on) 0µs 00 00µs 0 ms 0ms T C = 25 C T J = 75 C Single Pulse 0 00 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea

5 60 V S R I, rain Current () R G V GS 0V Pulse Width µs uty Factor 0. %.U.T. Fig 0a. Switching Time Test Circuit - V 0 V S 90% T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms Thermal Response (Z thjc ) 0. = PM t 0.02 SINGLE PULSE t2 0.0 (THERML RESPONSE) Notes:. uty factor = t / t Peak T J= P M x Z thjc TC t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6 5V V S L RIVER R G.U.T I S - V 20V tp 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)SS tp E S, Single Pulse valanche Energy (mj) TOP BOTTOM I V = 25V Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. rain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 0 V Q GS Q G.U.T. V - S V G V GS 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4. For N-Channel HEXFETS

8 TO-247C Package Outline imensions are shown in millimeters (inches) 5.90 (.626) 5.30 (.602) - B (.43) 3.55 (.40) 0.25 (.00) M (.27) B M (.209) 4.70 (.85) 2.50 (.089).50 (.059) (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X (.056) 3X.00 (.039) 0.25 (.00) M C S 3.40 (.33) 3.00 (.8) 2X - C (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) NOTES: 0.80 (.03) 3X 0.40 (.06) 2.60 (.02) 2.20 (.087) IMENSIONING & TOLERNCING PER NSI Y4.5M, CONTROLLING IMENSION : INCH. 3 CONFORMS TO JEEC OUTLINE TO-247-C. LE SSIGNMENTS Hexfet IGBT LE SSIGNMENTS - Gate - Gate 2 - rain - GTE2 - Collector 2 - RIN 3 - Source 3 - Emitter 3 - SOURCE 4 - rain 4 - RIN4 - Collector TO-247C Part Marking Information EXMPLE: THIS IS N IRFPE30 WITH SSEMBLY LOT COE 5657 SSEMBLE ON WW 35, 2000 IN THE SSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE IRFPE30 035H PRT NUMBER TE COE YER 0 = 2000 WEEK 35 LINE H ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.05/05

9 Note: For the most current drawings please refer to the IR website at: