IRF6614PbF IRF6614TRPbF DirectFET Power MOSFET

Transcription

1 Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHS Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l ual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques P IRF6614PbF IRF6614TRPbF irectfet Power MOSFET Typical values (unless otherwise specified) V SS V GS R S(on) R S(on) 40V max ±20V max 5.9mΩ@ V 7.1mΩ@ 4.5V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V irectfet ISOMETRIC ST pplicable irectfet Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT escription The IRF6614PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency C-C converters that power the latest generation of processors operating at higher frequencies. The IRF6614PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket. bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 40 V V GS Gate-to-Source Voltage ±20 T = 25 C Continuous rain Current, V V e 12.7 T = 70 C Continuous rain Current, V V e.1 T C = 25 C Continuous rain Current, V V f 55 I M Pulsed rain Current g 2 E S Single Pulse valanche Energy h 22 mj I R valanche Currentg I = 12.7 I =.2 V S = 32V VS= 20V T J = 125 C T J = 25 C V GS, Gate-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on 1 in. square Cu board, steady state. Starting T J = 25 C, L = 0.43mH, R G = 25Ω, I S = /5/06

2 IRF6614PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 40 V V GS = 0V, I = 250µ ΒV SS / T J Breakdown Voltage Temp. Coefficient 38 mv/ C Reference to 25 C, I = 1m R S(on) Static rain-to-source On-Resistance mω V GS = V, I = 12.7 i V GS = 4.5V, I =.2 i V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ V GS(th) / T J Gate Threshold Voltage Coefficient -5.5 mv/ C I SS rain-to-source Leakage Current 1.0 µ 150 I GSS Gate-to-Source Forward Leakage 0 n Gate-to-Source Reverse Leakage -0 gfs Forward Transconductance 71 S V S = 32V, V GS = 0V V S = 32V, V GS = 0V, T J = 125 C V GS = 20V V GS = -20V V S = V, I =.2 Q g Total Gate Charge Q gs1 Pre-Vth Gate-to-Source Charge 5.9 Q gs2 Post-Vth Gate-to-Source Charge 1.4 nc Q gd Gate-to-rain Charge 6.0 V S = 20V V GS = 4.5V I =.2 Q godr Gate Charge Overdrive 5.7 See Fig. 15 Q sw Switch Charge (Q gs2 Q gd ) 7.4 Q oss Output Charge 9.5 nc V S = 16V, V GS = 0V R G Gate Resistance Ω t d(on) Turn-On elay Time 13 t r Rise Time 27 t d(off) Turn-Off elay Time 18 ns V = 20V, V GS = 4.5Vi I =.2 Clamped Inductive Load t f Fall Time 3.6 C iss Input Capacitance 2560 C oss Output Capacitance 370 pf C rss Reverse Transfer Capacitance 200 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 53 (Body iode) I SM Pulsed Source Current 2 (Body iode)g V S iode Forward Voltage 1.0 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc V GS = 0V V S = 20V ƒ = 1.0MHz MOSFET symbol Conditions showing the integral reverse p-n junction diode. T J = 25 C, I S =.2, V GS = 0V i T J = 25 C, I F =.2 di/dt = 0/µs i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. 2

3 bsolute Maximum Ratings Thermal Response ( Z thj ) = SINGLE PULSE ( THERML RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-mbient IRF6614PbF Parameter Max. Units = 25 C Power issipation e 2.1 W = 70 C Power issipation e 1.4 C = 25 C Power issipation f 42 T P Peak Soldering Temperature 270 C T J Operating Junction and -40 to 150 Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient el 58 R θj Junction-to-mbient jl 12.5 R θj Junction-to-mbient kl 20 C/W R θjc Junction-to-Case fl 3.0 R θj-pcb Junction-to-PCB Mounted 1.0 Linear erating Factor e W/ C 1E-006 1E Notes: ƒ Surface mounted on 1 in. square Cu board, steady state. T C measured with thermocouple incontact with top (rain) of part. ˆ Used double sided cooling, mounting pad with large heatsink. t 1, Rectangular Pulse uration (sec) R 4 R 4 τ 4 τ 4 R 5 R 5 τ 5 τ 5 τ C τ Ri ( C/W) τi (sec) Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthja Tc Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š R θ is measured at T J of approximately 90 C. ƒ Surface mounted on 1 in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3

4 C, Capacitance (pf) Typical R S(on) (Normalized) I, rain-to-source Current () I, rain-to-source Current () IRF6614PbF 00 0 VGS TOP V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V BOTTOM 2.3V 00 0 VGS TOP V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V BOTTOM 2.3V 1 2.3V µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 1 2.3V 60µs PULSE WITH Tj = 150 C V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics I, rain-to-source Current (Α) T J = 150 C T J = 25 C T J = -40 C I = 12.7 V GS = V V S = 15V 60µs PULSE WITH V GS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature 4000 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd Ciss Typical R S(on) (mω) 30 T = 25 C V GS = 3.0V V GS = 3.5V V GS = 4.0V V GS = 4.5V V GS = 5.0V V GS = V 00 Coss 0 Crss V S, rain-to-source Voltage (V) I, rain Current () Fig 8. Typical Capacitance vs.rain-to-source Voltage Fig 9. Typical On-Resistance Vs. rain Current and Gate Voltage 4

5 E S, Single Pulse valanche Energy (mj) I, rain Current () V GS(th) Gate threshold Voltage (V) I, rain-to-source Current () I S, Reverse rain Current () T J = 150 C T J = 25 C T J = -40 C 1.0 V GS = 0V V S, Source-to-rain Voltage (V) Fig. Typical Source-rain iode Forward Voltage 00 0 IRF6614PbF OPERTION IN THIS RE LIMITE BY R S (on) C msec 0µsec 1msec 1 Tc = 25 C Tj = 175 C Single Pulse V S, rain-tosource Voltage (V) Fig11. Maximum Safe Operating rea I = 250µ T J, Junction Temperature ( C) T J, Temperature ( C ) Fig 12. Maximum rain Current vs. Case Temperature 0 80 Fig 13. Typical Threshold Voltage vs. Junction Temperature I TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 14. Maximum valanche Energy Vs. rain Current 5

6 IRF6614PbF Vds Id Vgs 0 1K UT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform V (BR)SS 15V tp V S L RIVER VR GS G 20V tp.u.t I S 0.01Ω - V I S Fig 16b. Unclamped Inductive Test Circuit Fig 16c. Unclamped Inductive Waveforms L V S V - V S 90%.U.T % V GS V GS Pulse Width < 1µs uty Factor < 0.1% t d(on) t r t d(off) t f Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms 6

7 IRF6614PbF -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 18. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, ST Outline (Small Size Can, T-esignation). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GTE = RIN S = SOURCE G S S 7

8 IRF6614PbF irectfet Outline imension, ST Outline (Small Size Can, T-esignation). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. irectfet Part Marking COE B C E F G H J K L M R P IMENSIONS METRIC IMPERIL

9 irectfet Tape & Reel imension (Showing component orientation). IRF6614PbF NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 00 parts on 7" reel, order IRF6614TR1PBF COE B C E F G H REEL IMENSIONS STNR OPTION (QTY 4800) TR1 OPTION (QTY 00) METRIC IMPERIL METRIC IMPERIL Loaded Tape Feed irection COE B C E F G H IMENSIONS METRIC IMPERIL ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.05/06 9

10 Note: For the most current drawings please refer to the IR website at: