Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8. IRF7749L1TRPbF DirectFET Large Can Tape and Reel 4000 IRF7749L1TRPbF

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1 Typical R (on), (mω) pplications l RoH Compliant, Halogen Free l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter Primary witch ocket l Optimized for ynchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l ual ided Cooling Compatible l Compatible with existing urface Mount Techniques l Industrial Qualified irectfet Power MOFET Typical values (unless otherwise specified) G IRF7749LTRPbF V V G R (on) 60V min ±20V max.mω@ V Q g tot Q gd V gs(th) 200nC 7nC 2.9V pplicable irectfet Outline and ubstrate Outline B C M2 M4 L4 L6 L8 L8 irectfet IOMETRIC escription The IRF7749LTRPbF combines the latest HEXFET Power MOFET ilicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a 2 PK and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7749LTRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Base part number Package Type tandard Pack Orderable Part Number Form Quantity IRF7749LTRPbF irectfet Large Can Tape and Reel 4000 IRF7749LTRPbF bsolute Maximum Ratings Parameter Max. Units V rain-to-ource Voltage 60 V V G Gate-to-ource Voltage ±20 T C = 25 C Continuous rain Current, V V (ilicon Limited)f 200 T C = 0 C Continuous rain Current, V V (ilicon Limited)f 40 T = 25 C Continuous rain Current, V V (ilicon Limited)e 33 T C = 25 C Continuous rain Current, V V (Package Limited) f 375 I M Pulsed rain Current g 800 E ingle Pulse valanche Energy h 260 mj I R valanche Currentg I = 20 T J = 25 C T J = 25 C Typical R (on) ( mω) T C = 25 C V G = 6.0V V G = 8.0V V G = V V G = 4V V G, Gate-to-ource Voltage (V) I, rain Current () Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. rain Current Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ urface mounted on in. square Cu board, steady state. tarting T J = 25 C, L = 0.035mH, R G = 25Ω, I = International Rectifier February 8, 203

2 IRF7749LTRPbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV rain-to-ource Breakdown Voltage 60 V V G = 0V, I = 250μ ΔΒV /ΔT J Breakdown Voltage Temp. Coefficient 0.03 V/ C Reference to 25 C, I = 2m R (on) tatic rain-to-ource On-Resistance..50 mω V G = V, I = 20 i V G(th) Gate Threshold Voltage V V = V G, I = 250μ ΔV G(th) /ΔT J Gate Threshold Voltage Coefficient - mv/ C I rain-to-ource Leakage Current 20 μ V = 60V, V G = 0V 250 V = 48V, V G = 0V, T J = 25 C I G Gate-to-ource Forward Leakage 0 n V G = 20V Gate-to-ource Reverse Leakage -0 V G = -20V gfs Forward Transconductance 280 V = V, I = 20 Q g Total Gate Charge Q gs Pre-Vth Gate-to-ource Charge 36 V = 30V Q gs2 Post-Vth Gate-to-ource Charge 2 nc V G = V Q gd Gate-to-rain Charge 7 I = 20 Q godr Gate Charge Overdrive 0 ee Fig. 9 Q sw witch Charge (Q gs2 Q gd ) 83 Q oss Output Charge 67 nc V = 6V, V G = 0V R G Gate Resistance. Ω t d(on) Turn-On elay Time 7 t r Rise Time 43 t d(off) Turn-Off elay Time 78 ns t f Fall Time 39 C iss Input Capacitance 2320 C oss Output Capacitance 8 pf C rss Reverse Transfer Capacitance 850 C oss Output Capacitance 8060 C oss Output Capacitance 3 iode Characteristics Parameter Min. Typ. Max. Units I Continuous ource Current 200 (Body iode) I M Pulsed ource Current 800 (Body iode)ãg V iode Forward Voltage.3 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc V = 30V, V G = VÃi I = 20 R G =.8Ω V G = 0V V = 25V ƒ =.0MHz V G = 0V, V =.0V, f=.0mhz V G = 0V, V = 20V, f=.0mhz Conditions MOFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I = 20, V G = 0V i T J = 25 C, I F = 20, V = 30V di/dt = 0/μs i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2% International Rectifier February 8, 203

3 IRF7749LTRPbF bsolute Maximum Ratings Parameter Max. Units C = 25 C Power issipation f 25 W C = 0 C Power issipation f 63 = 25 C Power issipation c 3.3 T P Peak oldering Temperature 270 C T J Operating Junction and -55 to 75 T TG torage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient e 45 R θj Junction-to-mbient j 2.5 R θj Junction-to-mbient k 20 C/W R θj-can Junction-to-Can fl.2 R θj-pcb Junction-to-PCB Mounted 0.4 Thermal Response ( Z thjc ) C/W = INGLE PULE ( THERML REPONE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i Ri R 4 Ri ( C/W) τi (sec) R Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthjc Tc E-006 E t, Rectangular Pulse uration (sec) τ 4 τ 4 τ C τ Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case Notes: ƒ urface mounted on in. square Cu board, steady state. T C measured with thermocouple incontact with top (rain) of part. ˆ Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š R θ is measured at T J of approximately 90 C. ƒ urface mounted on in. square Cu board (still air). Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) International Rectifier February 8, 203

4 C, Capacitance (pf) V G, Gate-to-ource Voltage (V) I, rain-to-ource Current () R (on), rain-to-ource On Resistance (Normalized) I, rain-to-ource Current () I, rain-to-ource Current () IRF7749LTRPbF 00 0 VG TOP 5V V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.8V 00 VG TOP 5V V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.8V 0 3.8V 60μs PULE WITH Tj = 25 C V, rain-to-ource Voltage (V) Fig 4. Typical Output Characteristics 3.8V 60μs PULE WITH Tj = 75 C 0. 0 V, rain-to-ource Voltage (V) Fig 5. Typical Output Characteristics I = 20 V G = V 0 T J = 75 C T J = 25 C T J = -40 C.5.0 V = 25V 60μs PULE WITH V G, Gate-to-ource Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature V G = 0V, f = MHZ C iss = C gs C gd, C ds HORTE C rss = C gd C oss = C ds C gd Ciss 4 2 I = 20 V = 48V V = 30V V = 2V 8 Coss 6 00 Crss V, rain-to-ource Voltage (V) Q G Total Gate Charge (nc) Fig 8. Typical Capacitance vs.rain-to-ource Voltage Fig 9. Typical Total Gate Charge vs Gate-to-ource Voltage International Rectifier February 8, 203

5 I, Reverse rain Current () E, ingle Pulse valanche Energy (mj) I, rain Current () V G (th) Gate threshold Voltage (V) I, rain-to-ource Current () IRF7749LTRPbF OPERTION IN THI RE LIMITE BY R (on) μsec T J = 75 C T J = 25 C T J = -40 C C msec msec V G = 0V V, ource-to-rain Voltage (V) Fig. Typical ource-rain iode Forward Voltage Tc = 25 C Tj = 75 C ingle Pulse V, rain-toource Voltage (V) Fig. Maximum afe Operating rea I =.0 I =.0m I = 250μ T C, CaseTemperature ( C) Fig 2. Maximum rain Current vs. Case Temperature I TOP 20 3 BOTTOM T J, Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature tarting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy Vs. rain Current International Rectifier February 8, 203

6 E R, valanche Energy (mj) valanche Current () IRF7749LTRPbF 00 0 uty Cycle = ingle Pulse 0.0 llowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 50 C and Tstart =25 C (ingle Pulse) llowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25 C and Tstart = 50 C E-06.0E-05.0E-04.0E-03.0E-02.0E-0 Fig 5. Typical valanche Current Vs.Pulsewidth TOP ingle Pulse BOTTOM % uty Cycle I = tarting T J, Junction Temperature ( C) Fig 6. Maximum valanche Energy Vs. Temperature tav (sec) Notes on Repetitive valanche Curves, Figures 5, 6: (For further info, see N-05 ). valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. afe operation in valanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 9a, 9b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = llowable avalanche current. 7. ΔT = llowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 5, 6). t av = verage time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see figure ) P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2T/ [.3 BV Z th ] E (R) = P (ave) t a -.U.T ƒ - Circuit Layout Considerations Low tray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I Waveform Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt = P.W. Period V G =V V * R G di/dt controlled by R G river same type as.u.t. I controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I * V G = 5V for Logic Level evices Fig 7. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOFETs International Rectifier February 8, 203

7 IRF7749LTRPbF Id Vds Vgs 0 20K K UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform 5V tp V (BR) V L RIVER VR GG 20V tp.u.t I 0.0Ω - V I Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms V R V V G.U.T. 90% R G - V VV G Pulse Width µs uty Factor 0. % % V G t d(on) t r t d(off) t f Fig 20a. witching Time Test Circuit Fig 20b. witching Time Waveforms International Rectifier February 8, 203

8 IRF7749LTRPbF irectfet Board Footprint, L8 (Large ize Can). Please see N-35 for irectfet assembly details and stencil and substrate design recommendations G = GTE = RIN = OURCE G Note: For the most current drawing please refer to IR website at International Rectifier February 8, 203

9 IRF7749LTRPbF irectfet Outline imension, L8 Outline (Largeize Can). Please see N-35 for irectfet assembly details and stencil and substrate design recommendations COE B C E F G H J K L M P R IMENION METRIC IMPERIL MIN MX MIN MX L irectfet Part Marking GTE MRKING LOGO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at International Rectifier February 8, 203

10 IRF7749LTRPbF irectfet Tape & Reel imension (howing component orientation). LOE TPE FEE IRECTION NOTE: Controlling dimensions in mm td reel quantity is 4000 parts. (ordered as IRF7749LTRPBF). COE B C E F G H REEL IMENION TNR OPTION (QTY 4000) METRIC MIN MX IMPERIL MX MIN NOTE: CONTROLLING IMENION IN MM COE B C E F G H IMENION METRIC MIN MX IMPERIL Note: For the most current drawing please refer to IR website at Qualification Information Qualification level Industrial * MIN MX Moisture ensitivity Level irectfet ML RoH Compliant Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: pplicable version of JEEC standard at the time of product release. * Industrial qualification standards except autoclave test conditions. (per JEEC J-T-020 ) Yes Revision History ate Comments 2/3/203 TR option removed and Tape & Reel Info updated accordingly. Hyperlinks added throw-out the document IR WORL HEQURTER: N epulveda Blvd, El egundo, California 90245, U To contact International Rectifier, please visit International Rectifier February 8, 203