100% Rg tested Increased Reliability. Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen

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1 PD V DS 3 V R DS(on) max (@V GS = V).85 mω Q g (typical) 37 nc R G (typical).5 Ω I D (@T c(bottom) = 25 C) h IRFH53PbF HEXFET Power MOSFET PQFN 5X6 mm pplications OR-ing MOSFET for 2V (typical) Bus in-rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<.85mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (<. C/W) Increased Power Density % Rg tested Increased Reliability Low Profile (<.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Form Quantity IRFH53TRPBF PQFN 5mm x 6mm Tape and Reel 4 IRFH53TR2PBF PQFN 5mm x 6mm Tape and Reel 4 Note bsolute Maximum Ratings V DS V GS I T = 25 C I T = 7 C I T C(Bottom) = 25 C I T C(Bottom) = C I DM P = 25 C P C(Bottom) = 25 C T J T STG Notes through are on page 8 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V Pulsed Drain Current c Power Dissipation g Power Dissipation g Linear Derating Factor g Operating Junction and Storage Temperature Range Max. 3 ± h h to 5 Units V W W/ C C /8/9

2 IRFH53PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 3 V V GS = V, I D = 25µ ΒV DSS / T J Breakdown Voltage Temp. Coefficient.2 V/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance V GS = V, I D = 5 e mω V GS = 4.5V, I D = 5 e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = µ V GS(th) Gate Threshold Voltage Coefficient -6.9 mv/ C I DSS Drain-to-Source Leakage Current 5. V DS = 24V, V GS = V µ 5 V DS = 24V, V GS = V, T J = 25 C I GSS Gate-to-Source Forward Leakage V GS = 2V n Gate-to-Source Reverse Leakage - V GS = -2V gfs Forward Transconductance 28 S V DS = 5V, I D = 5 Q g Total Gate Charge 77 nc V GS = V, V DS = 5V, I D = 5 Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 9.8 V DS = 5V Q gs2 Post-Vth Gate-to-Source Charge 5 V GS = 4.5V nc Q gd Gate-to-Drain Charge 2 I D = 5 Q godr Gate Charge Overdrive See Fig.6,7 & 8 Q sw Switch Charge (Q gs2 Q gd ) 7 Q oss Output Charge 22 nc V DS = 6V, V GS = V R G Gate Resistance Ω t d(on) Turn-On Delay Time 2 V DD = 5V, V GS = 4.5V t r Rise Time 78 I D = 5 ns t d(off) Turn-Off Delay Time 22 R G =.Ω t f Fall Time 23 See Fig.5 C iss Input Capacitance 54 V GS = V C oss Output Capacitance 7 pf V DS = 5V C rss Reverse Transfer Capacitance 46 ƒ =.MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 5 mj I R valanche Current c 5 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol (Body Diode) showing the G I SM Pulsed Source Current integral reverse 4 S (Body Diode)c p-n junction diode. V SD Diode Forward Voltage. V T J = 25 C, I S = 5, V GS = V e t rr Reverse Recovery Time ns T J = 25 C, I F = 5, V DD = 5V Q rr Reverse Recovery Charge 53 8 nc di/dt = 3/µs e t on Forward Turn-On Time Time is dominated by parasitic Inductance Thermal Resistance Parameter Typ. Max. Units R θjc (Bottom) Junction-to-Case f. R θjc (Top) Junction-to-Case f 5 C/W R θj Junction-to-mbient g 35 R θj (<s) Junction-to-mbient g

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current () R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current () I D, Drain-to-Source Current () IRFH53PbF VGS TOP V 4.5V 4.V 3.5V 3.25V 3.V 2.75V BOTTOM 2.5V VGS TOP V 4.5V 4.V 3.5V 3.25V 3.V 2.75V BOTTOM 2.5V 2.5V 2.5V 6µs PULSE WIDTH Tj = 25 C.. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics T J = 5 C 6µs PULSE WIDTH Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D = 5 V GS = V T J = 25 C V DS = 5V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 4 2 I D = 5 V DS = 24V V DS = 5V C iss 8 C oss 6 4 C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage 3

4 V GS(th), I D, Drain Current () Gate threshold Voltage (V) I SD, Reverse Drain Current () I D, Drain-to-Source Current () IRFH53PbF OPERTION IN THIS RE LIMITED BY R DS (on) T J = 5 C µsec T J = 25 C msec V GS = V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2 Tc = 25 C msec Tj = 5 C Single Pulse.. V DS, Drain-to-Source Voltage (V) 3. Fig 8. Maximum Safe Operating rea Limited By Package I D =. ID =.m ID = 25µ ID = µ T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature T J, Temperature ( C ) Fig. Threshold Voltage Vs. Temperature Thermal Response ( Z thjc ) C/W.. D = SINGLE PULSE ( THERML RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4

5 E S, Single Pulse valanche Energy (mj) IRFH53PbF R DS(on), Drain-to -Source On Resistance (m Ω) I D = I D TOP BOTTOM 5 3 T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On-Resistance vs. Gate Voltage Fig 3. Maximum valanche Energy vs. Drain Current V (BR)DSS 5V tp V DS L DRIVER R G 2V tp D.U.T IS.Ω - V DD I S Fig 4a. Unclamped Inductive Test Circuit Fig 4b. Unclamped Inductive Waveforms R G V GS V DS R D D.U.T. - V DD V DS 9% VV GS Pulse Width µs Duty Factor. % V GS t d(on) t r t d(off) t f Fig 5a. Switching Time Test Circuit Fig 5b. Switching Time Waveforms 5

6 IRFH53PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-pplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 6. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 7. Gate Charge Test Circuit Fig 8. Gate Charge Waveform 6

7 IRFH53PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note N-54 at PQFN 5x6 Outline "B" Part Marking INTERNTIONL RECTIFIER LOGO DTE CODE SSEMBLY SITE CODE (Per SCOP 2-2) PIN IDENTIFIER XXXX XYWWX XXXXX PRT NUMBER ( 4 or 5 digits ) MRKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of ETI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: 7

8 IRFH53PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Industrial (per JEDEC JES D47F guidelines ) MS L PQFN 5mm x 6mm (per JE DEC J-S T D-2D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: pplicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.9mH, R G = 25Ω, I S = 5. ƒ Pulse width 4µs; duty cycle 2%. R θ is measured at T J of approximately 9 C. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to by production test capability Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information./29 8