W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 27
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1 PD Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability l LeadFree l HalogenFree G D S IRFB367GPbF V DSS R DS(on) typ. max. I D D HEXFET Power MOSFET S D G TO22AB IRFB367GPbF 75V 7.34m: 9.m: 8A G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V 8c I T C = C Continuous Drain Current, V V 56c A I DM Pulsed Drain Current d 3 P C = 25 C Maximum Power Dissipation 4 W Linear Derating Factor.96 W/ C V GS GatetoSource Voltage ± 2 V dv/dt Peak Diode Recovery f 27 V/ns T J Operating Junction and 55 to 75 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 632 or M3 screw 3 lbxin (.Nxm) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 2 mj I AR Avalanche Currentc 46 A E AR Repetitive Avalanche Energy g 4 mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc JunctiontoCase j.45 R θcs CasetoSink, Flat Greased Surface, TO22.5 C/W R θja JunctiontoAmbient, TO /2/
2 IRFB367GPbF (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 75 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.96 V/ C R DS(on) Static DraintoSource OnResistance mω V GS(th) Gate Threshold Voltage V I DSS DraintoSource Leakage Current 2 µa 25 I GSS GatetoSource Forward Leakage na GatetoSource Reverse Leakage (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 5 S Q g Total Gate Charge nc Q gs GatetoSource Charge 3 Q gd GatetoDrain ("Miller") Charge 6 Q sync Total Gate Charge Sync. (Q g Q gd ) 4 R G(int) Internal Gate Resistance.55 Ω t d(on) TurnOn Delay Time 6 ns t r Rise Time t d(off) TurnOff Delay Time 43 t f Fall Time 96 C iss Input Capacitance 37 pf C oss Output Capacitance 28 C rss Reverse Transfer Capacitance 3 C oss eff. (ER) Effective Output Capacitance (Energy Related)j 38 C oss eff. (TR) Effective Output Capacitance (Time Related)h 6 Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 8c A Conditions V GS = V, I D = 25µA Reference to 25 C, I D = 5mAd V GS = V, I D = 46A g V DS = V GS, I D = µa V DS = 75V, V GS = V V DS = 6V, V GS = V, T J = 25 C V GS = 2V V GS = 2V Conditions V DS = 5V, I D = 46A I D = 46A V DS = 38V V GS = V g I D = 46A, V DS =V, V GS = V V DD = 49V I D = 46A R G = 6.8Ω V GS = V g V GS = V V DS = 5V ƒ =.MHz V GS = V, V DS = V to 6V j V GS = V, V DS = V to 6V h Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 3 integral reverse G (Body Diode)d pn junction diode. V SD Diode Forward Voltage.3 V, I S = 46A, V GS = V g t rr Reverse Recovery Time 33 5 ns V R = 64V, T J = 25 C I F = 46A Q rr Reverse Recovery Charge nc di/dt = A/µs g 47 7 T J = 25 C I RRM Reverse Recovery Current.9 A t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LSLD) D S Notes: I SD 46A, di/dt 92A/µs, V DD V (BR)DSS, T J 75 C. Calculated continuous current based on maximum allowable junction Pulse width 4µs; duty cycle 2%. temperature. Note that current limitations arising from heating of the C oss eff. (TR) is a fixed capacitance that gives the same charging time device leads may occur with some lead mounting arrangements. as C oss while V DS is rising from to 8% V DSS. Repetitive rating; pulse width limited by max. junction temperature. C oss eff. (ER) is a fixed capacitance that gives the same energy as ƒ Limited by T C oss while V DS is rising from to 8% V DSS. Jmax, starting, L =.2mH R ˆ R θ is measured at T J approximately 9 C. G = 25Ω, I AS = 46A, V GS =V. Part not recommended for use above this value. 2
3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (A) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRFB367GPbF VGS TOP 5V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V VGS TOP 5V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 4.5V 4.5V 6µs PULSE WIDTH Tj = 25 C. V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C. V DS, DraintoSource Voltage (V) Fig 2. Typical Output Characteristics I D = 8A V GS = V T J = 75 C 2..5 V DS = 25V 6µs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = 46A V DS = 24V V DS = 5V C iss 6. C oss 4. C rss V DS, DraintoSource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. DraintoSource Voltage Fig 6. Typical Gate Charge vs. GatetoSource Voltage 3
4 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) DraintoSource Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, DraintoSource Current (A) IRFB367GPbF OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C V GS = V V SD, SourcetoDrain Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage msec msec µsec Tc = 25 C Tj = 75 C Single Pulse DC V DS, DraintoSource Voltage (V) Fig 8. Maximum Safe Operating Area Id = 5mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. DraintoSource Breakdown Voltage I D TOP 5.6A A BOTTOM 46A V DS, DraintoSource Voltage (V) Starting T J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent 4
5 E AR, Avalanche Energy (mj) Avalanche Current (A) IRFB367GPbF.. D =.5 Thermal Response ( Z thjc ) C/W R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i Ri R 4 Ri ( C/W) τi (sec) R Notes: SINGLE PULSE. Duty Factor D = t/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc Tc. E6 E5.... t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, JunctiontoCase τ 4 τ 4 τ C τ Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse).5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τj = 25 C and Tstart = 5 C...E6.E5.E4.E3.E2.E tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM.% Duty Cycle I D = 46A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 Q RR (A) I RR (A) Q RR (A) V GS(th), Gate Threshold Voltage (V) I RR (A) IRFB367GPbF I F = 3A V R = 64V T J = 25 C I D = µa I D = 25µA I D =.ma I D =.A T J, Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature di F /dt (A/µs) Fig. 7 Typical Recovery Current vs. di f /dt 2 I F = 46A V R = 64V I F = 3A V R = 64V 5 T J = 25 C 4 T J = 25 C di F /dt (A/µs) di F /dt (A/µs) Fig. 8 Typical Recovery Current vs. di f /dt Fig. 9 Typical Stored Charge vs. di f /dt I F = 46A V R = 64V T J = 25 C di F /dt (A/µs) Fig. 2 Typical Stored Charge vs. di f /dt 6
7 IRFB367GPbF D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω V DD A I AS Fig 2a. Unclamped Inductive Test Circuit Fig 2b. Unclamped Inductive Waveforms L D V DS V DD V DS 9% D.U.T % V GS Pulse Width < µs Duty Factor <.% V GS t d(on) t r t d(off) t f Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms Vds Id Vgs K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform 7
8 IRFB367GPbF TO22AB Package Outline Dimensions are shown in millimeters (inches) TO22AB Part Marking Information EXAMPLE: THIS IS AN IRFB43GPBF Note: "G" suffix in part number indicates "Halogen Free" Note: "P" in assembly line position indicates "Lead Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE: Y= LAST DIGIT OF CALENDAR YEAR WW= WORK WEEK X= FACT ORY CODE TO22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 8/2 8
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
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More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
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I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationV DSS. 40V R DS(on) typ. 1.4mΩ max. 1.8mΩ 250Ac. I D (Silicon Limited) I D (Package Limited) 195A. HEXFET Power MOSFET.
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationBase Part Number Package Type Standard Pack Orderable Part Number
V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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