V DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
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1 PD Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 30V 1.95mΩ@ = V 57nC D Benefits l Very Low R DS(on) at 4.5V l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free S D G TO-220AB G D S Gate Drain Source Absolute Maximum Ratings V DS I T C = 25 C I T C = C I DM P C = 25 C P C = C T J T STG Drain-to-Source Voltage Gate-to-Source Voltage Parameter Continuous Drain V Continuous Drain V Pulsed Drain Current c Maximum Power Dissipation g Maximum Power Dissipation g Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for seconds Mounting torque, 6-32 or M3 screw Max. 30 ± h 190h to (1.6mm from case) lbxin (1.1Nxm) Units V A W W/ C C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case g 0.64 R θcs Case-to-Sink, Flat Greased Surface 0.50 C/W R θja Junction-to-Ambient f 62 Notes through are on page /03/09
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 30 V ΒV DSS / T J Breakdown Voltage Temp. Coefficient 11 mv/ C R DS(on) Static Drain-to-Source On-Resistance mω = 4.5V, I D = 48A e (th) Gate Threshold Voltage V V DS =, I D = 150µA (th) / T J Gate Threshold Voltage Coefficient -7.8 mv/ C I DSS Drain-to-Source Leakage Current 1.0 µa V DS = 24V, = 0V V DS = 24V, = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage na = 20V Gate-to-Source Reverse Leakage - = -20V gfs Forward Transconductance 140 S V DS = 15V, I D = 48A Q g Total Gate Charge Q gs1 Pre-Vth Gate-to-Source Charge 16 V DS = 15V Q gs2 Post-Vth Gate-to-Source Charge 6.7 nc = 4.5V Q gd Gate-to-Drain Charge 19 I D = 48A Q godr Gate Charge Overdrive 15 See Fig. 16 Q sw Switch Charge (Q gs2 Q gd ) 25.7 Q oss Output Charge 35 nc V DS = 16V, = 0V R G Gate Resistance Ω t d(on) Turn-On Delay Time 36 V DD = 15V, = 4.5Ve t r Rise Time 170 ns I D = 48A t d(off) Turn-Off Delay Time 33 R G = 1.8Ω t f Fall Time 60 See Fig. 14 C iss Input Capacitance 8420 = 0V C oss Output Capacitance 1620 pf V DS = 15V C rss Reverse Transfer Capacitance 650 ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energyd 520 mj I AR Avalanche Currentc 48 A Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 260h (Body Diode) A I SM Pulsed Source Current 50 (Body Diode)c V SD Diode Forward Voltage 1.0 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Conditions = 0V, I D = 250µA Reference to 25 C, I D = 1.0mA = V, I D = 60A e Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 48A, = 0V e T J = 25 C, I F = 48A, V DD = 15V di/dt = 244A/µs e 2
3 I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) 00 0 VGS TOP V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 0 VGS TOP V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 3.0V 60µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 120A = V T J = 175 C 1.5 T J = 25 C V DS = 15V 60µs PULSE WIDTH , Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3
4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf), Gate-to-Source Voltage (V) = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss I D = 48A V DS = 24V V DS = 15V 8.0 C oss C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 0 00 T J = 175 C OPERATION IN THIS AREA LIMITED BY R DS (on) 0 µsec T J = 25 C msec 1msec 1 = 0V V SD, Source-to-Drain Voltage (V) 1 Tc = 25 C Tj = 175 C Single Pulse 0 1 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 I D, (th), Drain Current (A) Gate threshold Voltage (V) Limited By Package I D = 150µA I D = 1.0mA I D = 1.0A T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature 1 D = 0.50 Thermal Response ( Z thjc ) C/W R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i Ri R 4 Ri ( C/W) τi (sec) R SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc Tc E-006 1E t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 τ 4 τ 4 τ C τ
6 R DS(on), Drain-to -Source On Resistance (m Ω) E AS, Single Pulse Avalanche Energy (mj) 12 8 I D = 60A I D TOP 17A 27A BOTTOM 48A T J = 125 C T J = 25 C , Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy vs. Drain Current 15V tp V (BR)DSS V DS L DRIVER R G 20V tp D.U.T IAS 0.01Ω - V DD A Fig 13b. Unclamped Inductive Test Circuit I AS Fig 13c. Unclamped Inductive Waveforms V DS R D D.U.T. V DS 90% R G - V DD Pulse Width 1 µs Duty Factor 0.1 % % t d(on) t r t d(off) t f Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms 6
7 - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds 12V.2µF 50KΩ.3µF Vgs D.U.T. V - DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgodr Qgd Qgs2 Qgs1 Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform 7
8 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: 8
9 TO-220AB Part Marking Information (;$03/( 7,6,6$1,5) /27&2'( $66(0%/('21::,17($66(0%/</,1(& 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& Note: For the most current drawing please refer to IR website at: Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.45mH, R G = 25Ω, I AS = 48A. ƒ Pulse width 400µs; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. R θ is measured at T J approximately 90 C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.07/
Approved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
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More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRFR3710ZPbF IRFU3710ZPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationV DSS R DS(on) max Qg 30V GS = 10V 20nC
Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low R DS(ON) at 4.5V V GS l
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
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Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
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Typical R DS(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationW/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 57
PD 974 HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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