G D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
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1 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and ynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability G S V SS S G TO-22AB IRFB337ZPbF IRFB337ZPbF IRFS337ZPbF IRFSL337ZPbF R S(on) typ. max. I (Silicon Limited) I (Package Limited) HEXFET Power MOSFET G S 2 Pak IRFS337ZPbF 75V 4.6m: 5.8m: 2Ac 75A P B S G TO-262 IRFSL337ZPbF G S Gate rain Source Absolute Maximum Ratings Symbol Parameter Max. Units T C = 25 C 2c Continuous rain Current, V V (Silicon Limited) T C = C Continuous rain Current, V (Silicon Limited) 88c A T C = 25 C Continuous rain Current, V V (Package Limited) 75 I M Pulsed rain Current d 48 C = 25 C Maximum Power issipation 23 W Linear erating Factor.5 W/ C V GS Gate-to-Source Voltage ± 2 V dv/dt Peak iode Recovery f 6.7 V/ns T J Operating Junction and -55 to 75 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 6-32 or M3 screw 3 lbxin (.Nxm) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 4 mj I AR Avalanche Currentc 75 A E AR Repetitive Avalanche Energy g 23 mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case k.65 R θcs Case-to-Sink, Flat Greased Surface, TO-22.5 C/W R θja Junction-to-Ambient, TO-22 k 62 R θja Junction-to-Ambient (PCB Mount), 2 Pak jk 4 5/3/7
2 IRFB/S/SL337ZPbF (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)SS rain-to-source Breakdown Voltage 75 V V (BR)SS / T J Breakdown Voltage Temp. Coefficient.94 V/ C R S(on) Static rain-to-source On-Resistance mω V GS(th) Gate Threshold Voltage V R G(int) Internal Gate Resistance.7 Ω I SS rain-to-source Leakage Current 2 µa 25 I GSS Gate-to-Source Forward Leakage na Gate-to-Source Reverse Leakage - (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 32 S Q g Total Gate Charge 79 nc Q gs Gate-to-Source Charge 9 Q gd Gate-to-rain ("Miller") Charge 24 Q sync Total Gate Charge Sync. (Q g - Q gd ) 55 t d(on) Turn-On elay Time 5 ns t r Rise Time 64 t d(off) Turn-Off elay Time 38 t f Fall Time 65 C iss Input Capacitance 475 pf C oss Output Capacitance 42 C rss Reverse Transfer Capacitance 9 C oss eff. (ER) Effective Output Capacitance (Energy Related)i 44 C oss eff. (TR) Effective Output Capacitance (Time Related)h 4 iode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 2c A Conditions V GS = V, I = 25µA Reference to 25 C, I = 5mAd V GS = V, I = 75A g V S = V GS, I = 5µA V S = 75V, V GS = V V S = 75V, V GS = V, V GS = 2V V GS = -2V Conditions V S = 5V, I = 75A I = 75A V S = 38V V GS = V g I = 75A, V S =V, V GS = V V = 49V I = 75A R G = 2.6Ω V GS = V g V GS = V V S = 5V ƒ =.MHz V GS = V, V S = V to 6V j V GS = V, V S = V to 6V h Conditions MOSFET symbol (Body iode) showing the I SM Pulsed Source Current 48 integral reverse G (Body iode)di p-n junction diode. V S iode Forward Voltage.3 V, I S = 75A, V GS = V g t rr Reverse Recovery Time 33 5 ns V R = 64V, I F = 75A Q rr Reverse Recovery Charge nc di/dt = A/µs g I RRM Reverse Recovery Current 2.2 A t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSL) S Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by T Jmax, starting, L =.5mH R G = 25Ω, I AS = 75A, V GS =V. Part not recommended for use above this value. I S 75A, di/dt 57A/µs, V V (BR)SS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V S is rising from to 8% V SS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V S is rising from to 8% V SS. ˆ When mounted on " square PCB (FR-4 or G- Material). For recom mended footprint and soldering techniques refer to application note #AN-994. R θ is measured at T J approximately 9 C. 2
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I, rain-to-source Current (A) R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) IRFB/S/SL337ZPbF VGS TOP 5V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V VGS TOP 5V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 4.5V 4.5V 6µs PULSE WITH Tj = 25 C. V S, rain-to-source Voltage (V) 6µs PULSE WITH Tj = 75 C. V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 I = 72A V GS = V 2. T J = 75 C.5. V S = 25V 6µs PULSE WITH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd I = 72A V S = 6V V S = 38V V S = 5V C iss 6. C oss 4. C rss V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3
4 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)SS, I, rain Current (A) rain-to-source Breakdown Voltage (V) I S, Reverse rain Current (A) I, rain-to-source Current (A) IRFB/S/SL337ZPbF T J = 75 C OPERATION IN THIS AREA LIMITE BY R S (on) msec µsec msec V GS = V V S, Source-to-rain Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage C Tc = 25 C Tj = 75 C Single Pulse. V S, rain-to-source Voltage (V) Fig 8. Maximum Safe Operating Area 2 Limited By Package 95 Id = 5mA T C, Case Temperature ( C) Fig 9. Maximum rain Current vs. Case Temperature T J, Temperature ( C ) Fig. rain-to-source Breakdown Voltage.2 6 I TOP 5A 26A BOTTOM 75A Starting T V S, rain-to-source Voltage (V) J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. raincurrent 4
5 E AR, Avalanche Energy (mj) Avalanche Current (A) IRFB/S/SL337ZPbF =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci τi/ri Ri ( C/W) τi (sec) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthjc Tc. E-6 E t, Rectangular Pulse uration (sec) τ C τ Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case.5.. uty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τj = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM.% uty Cycle I = 75A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see Figures 3) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2T/ [.3 BV Z th ] E AS (AR) = P (ave) t av 5
6 Q RR (A) I RR (A) Q RR (A) V GS(th), Gate threshold Voltage (V) I RR (A) IRFB/S/SL337ZPbF I F = 48A V R = 64V I = 5µA I = 25µA I =.ma I =.A T J, Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature di F /dt (A/µs) Fig. 7 - Typical Recovery Current vs. di f /dt 2 I F = 72A 42 I F = 48A 5 V R = 64V 34 V R = 64V di F /dt (A/µs) di F /dt (A/µs) Fig. 8 - Typical Recovery Current vs. di f /dt Fig. 9 - Typical Stored Charge vs. di f /dt I F = 72A V R = 64V di F /dt (A/µs) Fig. 2 - Typical Stored Charge vs. di f /dt 6
7 IRFB/S/SL337ZPbF -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-Applied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 2. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)SS V S L RIVER R G 2V V GS tp.u.t I AS.Ω - V A I AS Fig 2a. Unclamped Inductive Test Circuit Fig 2b. Unclamped Inductive Waveforms L V S V - V S 9%.U.T % V GS Pulse Width < µs uty Factor <.% V GS t d(on) t r t d(off) t f Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms Vds Id Vgs K UT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform 7
8 IRFB/S/SL337ZPbF TO-22AB Package Outline (imensions are shown in millimeters (inches)) TO-22AB Part Marking Information (;$3/( 7,6,6$,5) $66(%/('2::,7($66(%/</,(& Note: "P" in assembly line position indicates "Lead-Free",7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< 3$578%(5 '$7(&2'( <($5 :((. /,(& TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at 8
9 IRFB/S/SL337ZPbF 2 Pak (TO-263AB) Package Outline imensions are shown in millimeters (inches) 2 Pak (TO-263AB) Part Marking Information 7,6,6$,5)6:,7,7(5$7,2$/ $66(%/('2:: 5(&7,),(5,7($66(%/</,(/ /2*2 $66(%/< )6 3$578%(5 '$7(&2'( <($5 :((. /,(/ 25,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< )6 3$578%(5 '$7(&2'( 3 '(6,*$7(6/($')5(( 352'8&7237,2$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at 9
10 IRFB/S/SL337ZPbF TO-262 Package Outline imensions are shown in millimeters (inches) TO-262 Part Marking Information (;$3/( 7,6,6$,5// $66(%/('2::,7($66(%/</,(&,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< 3$578%(5 '$7(&2'( <($5 :((. /,(& 25,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< 3$578%(5 '$7(&2'( 3 '(6,*$7(6/($')5(( 352'8&7237,2$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at
11 IRFB/S/SL337ZPbF 2 Pak (TO-263AB) Tape & Reel Information imensions are shown in millimeters (inches) TRR.6 (.63).5 (.59) 4. (.6) 3.9 (.53).6 (.63).5 (.59).368 (.45).342 (.35) FEE IRECTION TRL.85 (.73).65 (.65).6 (.457).4 (.449) 5.42 (.69) 5.22 (.6) 24.3 (.957) 23.9 (.94).9 (.429).7 (.42) 6. (.634) 5.9 (.626).75 (.69).25 (.49) 4.72 (.36) 4.52 (.78) FEE IRECTION 3.5 (.532) 2.8 (.54) 27.4 (.79) 23.9 (.94) (4.73) MAX. 6. (2.362) MIN. NOTES :. COMFORMS TO EIA CONTROLLING IMENSION: MILLIMETER. 3. IMENSION HUB. 4. INCLUES FLANGE OUTER EGE (.39) 24.4 (.96) (.97) MAX. 4 Note: For the most current drawing please refer to IR website at ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 5/7
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More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 57
PD 9736A IRFB427PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationOrdering Information Base Part Number Package Type Standard Pack Complete Part Number 500 I D = 100A T J = 125 C 200 I D,
R DS(on), Drain-to -Source On Resistance (m Ω) I D, Drain Current (A) StrongIRFET TM Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationIRFP4410ZPbF HEXFET Power MOSFET
PD 9739A IRFP44ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRF6609. HEXFET Power MOSFET V DSS R DS(on) max Qg. 20V GS = 10V 46nC GS = 4.5V
l Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationIRLMS1503PbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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