StrongIRFET IRFB7546PbF
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- John Moore
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1 I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters G D S HEXFET Power MOSFET V DSS R DS(on) typ. max I D 6V 6.m 7.3m 75A Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant S D G TO-22AB G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity TO-22 Tube 5 R DS(on), Drain-to -Source On Resistance (m ) 24 I D = 45A T J = 25 C V GS, Gate -to -Source Voltage (V) T C, Case Temperature ( C) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 24 International Rectifier Submit Datasheet Feedback January, 24
2 Absolute Maximum Rating Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 75 I T C = C Continuous Drain Current, V V 53 A I DM Pulsed Drain Current 3 P C = 25 C Maximum Power Dissipation 99 W Linear Derating Factor.7 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 3 Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy E AS (tested) Single Pulse Avalanche Energy Tested Value 3 mj I AR Avalanche Current A See Fig 5, 6, 23a, 23b E AR Repetitive Avalanche Energy mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.52 R CS Case-to-Sink, Flat Greased Surface.5 C/W R JA Junction-to-Ambient 62 (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 46 mv/ C Reference to 25 C, I D = ma V R GS = V, I D = 45A DS(on) Static Drain-to-Source On-Resistance m 7.5 V GS = 6.V, I D = 23A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = µa. V DS =6 V, V GS = V I DSS Drain-to-Source Leakage Current µa 5 V DS =6V,V GS = V,T J =25 C Gate-to-Source Forward Leakage V I GSS na GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V R G Gate Resistance.6 Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L = µh, R G = 5, I AS = 45A, V GS =V. I SD A, di/dt 26A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. R is measured at T J approximately 9 C. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994.: This value determined from sample failure population, starting T J =25 C, L= µh, R G = 5, I AS = 45A, V GS =V International Rectifier Submit Datasheet Feedback January, 24
3 Dynamic Electrical (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 5 S V DS = V, I D = 45A Q g Total Gate Charge I D = 45A Q gs Gate-to-Source Charge 4 V DS = 3V nc Q gd Gate-to-Drain Charge 8 V GS = V Q sync Total Gate Charge Sync. (Qg Qgd) 4 t d(on) Turn-On Delay Time V DD = 3V t r Rise Time 5 I D = 45A ns t d(off) Turn-Off Delay Time 32 R G = 2.7 t f Fall Time 34 V GS = V C iss Input Capacitance 3 V GS = V C oss Output Capacitance 28 V DS = 25V C rss Reverse Transfer Capacitance 8 ƒ =.MHz, See Fig.7 pf Effective Output Capacitance C oss eff.(er) 29 V (Energy Related) GS = V, VDS = V to 48V C oss eff.(tr) Output Capacitance (Time Related) 37 V GS = V, VDS = V to 48V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol D I S 75 (Body Diode) showing the A G Pulsed Source Current integral reverse I SM 3 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.2 V,I S = 45A,V GS = V dv/dt Peak Diode Recovery dv/dt 7.9 V/ns T J = 75 C,I S = 45A,V DS = 6V t rr Reverse Recovery Time 29 V DD = 5V ns 32 T J = 25 C I F = 45A, Q rr Reverse Recovery Charge 33 di/dt = A/µs nc 4 T J = 25 C I RRM Reverse Recovery Current.9 A International Rectifier Submit Datasheet Feedback January, 24
4 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics R DS(on), Drain-to-Source On Resistance I D = 45A V GS = V T J = 75 C.6.2. V DS = 25V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 6. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 45A V DS = 48V V DS = 3V VDS= 2V 8. C iss 6. C rss C oss V DS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Q G, Total Gate Charge (nc) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage International Rectifier Submit Datasheet Feedback January, 24
5 V (BR)DSS, Drain-to-Source Breakdown Voltage (V) Energy (µj) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) µsec T J = 75 C OPERATION IN THIS AREA LIMITED BY R DS (on) msec msec V GS = V V SD, Source-to-Drain Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage. Tc = 25 C Tj = 75 C Single Pulse.. DC V DS, Drain-to-Source Voltage (V) Fig. Maximum Safe Operating Area Id =.ma T J, Temperature ( C ) V DS, Drain-to-Source Voltage (V) Fig. Drain-to-Source Breakdown Voltage Fig 2. Typical C oss Stored Energy R DS (on), Drain-to -Source On Resistance (m ) VGS = 5.5V VGS = 6.V VGS = 7.V VGS = 8.V VGS = V I D, Drain Current (A) Fig 3. Typical On-Resistance vs. Drain Current International Rectifier Submit Datasheet Feedback January, 24
6 E AR, Avalanche Energy (mj) Thermal Response ( Z thjc ) C/W.. D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig 4. Maximum Effective Transient Thermal Impedance, Junction-to-Case Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse) Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 5. Avalanche Current vs. Pulse Width TOP Single Pulse BOTTOM.% Duty Cycle I D = 45A Starting T J, Junction Temperature ( C) Fig 6. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 5, 6: (For further info, see AN-5 at failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = tav f Z thjc (D, t av ) = Transient thermal resistance, see Figures 4) PD (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av International Rectifier Submit Datasheet Feedback January, 24
7 Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) I RRM (A) I F = 3A V R = 5V T J = 25 C ID = µa ID = 25µA ID =.ma ID =.A T J, Temperature ( C ) di F /dt (A/µs) Fig 7. Threshold Voltage vs. Temperature Fig 8. Typical Recovery Current vs. dif/dt I F = 45A V R = 5V T J = 25 C I F = 3A V R = 5V T J = 25 C di F /dt (A/µs) di F /dt (A/µs) Fig 9. Typical Recovery Current vs. dif/dt Fig 2. Typical Stored Charge vs. dif/dt I F = 45A V R = 5V T J = 25 C di F /dt (A/µs) Fig 2. Typical Stored Charge vs. dif/dt International Rectifier Submit Datasheet Feedback January, 24
8 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 2V tp D.U.T I AS. + - V DD A I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Vds Id Vgs VDD Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform International Rectifier Submit Datasheet Feedback January, 24
9 TO-22AB Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information E X A M P L E : T H IS IS A N IR F L O T C O D E ASSEM BLED O N W W 9, 2 IN TH E ASSEM BLY LIN E "C" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead - Free" IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E P A R T N U M B E R D A T E C O D E YEAR = 2 W EEK 9 LIN E C TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback January, 24
10 Qualification Information Qualification Level Industrial (per JEDEC JESD47F) Moisture Sensitivity Level TO-22 N/A RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245, USA To contact International Rectifier, please visit International Rectifier Submit Datasheet Feedback January, 24
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
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PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationTO-220AB IRFB4610. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 7.6
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationW/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 57
PD 974 HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationIRFR3710ZPbF IRFU3710ZPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationIRF6641TRPbF DIGITAL AUDIO MOSFET. Key Parameters V DS 200 V R DS(ON) V GS = 10V 51 m Qg typ. 34 nc R G(int) typ. 1.0
Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low R DS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for
More informationIRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET
PD -9744A IRFS37PbF IRFSL37PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationAUIRFR540Z AUIRFU540Z
AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z Application Automatic Voltage Regulator (AVR) Solenoid Injection Body Control Low Power Automotive Applications V DSS HEXFET Power MOSFET 0V R DS(on) typ. 22.5m I
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationAUTOMOTIVE GRADE. Standard Pack Orderable Part Number AUIRL3705Z TO-220 Tube 50 AUIRL3705Z AUIRL3705ZL TO-262 Tube 50 AUIRL3705ZL AUIRL3705ZS D 2 -Pak
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationAUTOMOTIVE GRADE C T STG
AUTOMOTIVE GRADE AUIRFN845 Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationStandard Pack. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7. V/ns Operating Junction and. mj I AR
IRFB347ZPbF Applications l Battery Management l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9728 IRFP336PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 57
PD 9736A IRFB427PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.5
PD 9747B IRFB377PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.8 C/W)
PD -97538A IRFH5025PbF HEXFET Power MOSFET V DS 250 V R DS(on) max (@V GS = V) 0 mω Q g (typical) 37 nc R G (typical).6 Ω I D (@T c(bottom) = 25 C) 25 A PQFN 5X6 mm Applications Secondary Side Synchronous
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 32
PD 9747 IRFS457PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More information