StrongIRFET IRFB7546PbF

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1 I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters G D S HEXFET Power MOSFET V DSS R DS(on) typ. max I D 6V 6.m 7.3m 75A Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant S D G TO-22AB G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity TO-22 Tube 5 R DS(on), Drain-to -Source On Resistance (m ) 24 I D = 45A T J = 25 C V GS, Gate -to -Source Voltage (V) T C, Case Temperature ( C) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 24 International Rectifier Submit Datasheet Feedback January, 24

2 Absolute Maximum Rating Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 75 I T C = C Continuous Drain Current, V V 53 A I DM Pulsed Drain Current 3 P C = 25 C Maximum Power Dissipation 99 W Linear Derating Factor.7 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 3 Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy E AS (tested) Single Pulse Avalanche Energy Tested Value 3 mj I AR Avalanche Current A See Fig 5, 6, 23a, 23b E AR Repetitive Avalanche Energy mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.52 R CS Case-to-Sink, Flat Greased Surface.5 C/W R JA Junction-to-Ambient 62 (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 46 mv/ C Reference to 25 C, I D = ma V R GS = V, I D = 45A DS(on) Static Drain-to-Source On-Resistance m 7.5 V GS = 6.V, I D = 23A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = µa. V DS =6 V, V GS = V I DSS Drain-to-Source Leakage Current µa 5 V DS =6V,V GS = V,T J =25 C Gate-to-Source Forward Leakage V I GSS na GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V R G Gate Resistance.6 Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L = µh, R G = 5, I AS = 45A, V GS =V. I SD A, di/dt 26A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. R is measured at T J approximately 9 C. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994.: This value determined from sample failure population, starting T J =25 C, L= µh, R G = 5, I AS = 45A, V GS =V International Rectifier Submit Datasheet Feedback January, 24

3 Dynamic Electrical (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 5 S V DS = V, I D = 45A Q g Total Gate Charge I D = 45A Q gs Gate-to-Source Charge 4 V DS = 3V nc Q gd Gate-to-Drain Charge 8 V GS = V Q sync Total Gate Charge Sync. (Qg Qgd) 4 t d(on) Turn-On Delay Time V DD = 3V t r Rise Time 5 I D = 45A ns t d(off) Turn-Off Delay Time 32 R G = 2.7 t f Fall Time 34 V GS = V C iss Input Capacitance 3 V GS = V C oss Output Capacitance 28 V DS = 25V C rss Reverse Transfer Capacitance 8 ƒ =.MHz, See Fig.7 pf Effective Output Capacitance C oss eff.(er) 29 V (Energy Related) GS = V, VDS = V to 48V C oss eff.(tr) Output Capacitance (Time Related) 37 V GS = V, VDS = V to 48V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol D I S 75 (Body Diode) showing the A G Pulsed Source Current integral reverse I SM 3 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.2 V,I S = 45A,V GS = V dv/dt Peak Diode Recovery dv/dt 7.9 V/ns T J = 75 C,I S = 45A,V DS = 6V t rr Reverse Recovery Time 29 V DD = 5V ns 32 T J = 25 C I F = 45A, Q rr Reverse Recovery Charge 33 di/dt = A/µs nc 4 T J = 25 C I RRM Reverse Recovery Current.9 A International Rectifier Submit Datasheet Feedback January, 24

4 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics R DS(on), Drain-to-Source On Resistance I D = 45A V GS = V T J = 75 C.6.2. V DS = 25V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 6. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 45A V DS = 48V V DS = 3V VDS= 2V 8. C iss 6. C rss C oss V DS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Q G, Total Gate Charge (nc) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage International Rectifier Submit Datasheet Feedback January, 24

5 V (BR)DSS, Drain-to-Source Breakdown Voltage (V) Energy (µj) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) µsec T J = 75 C OPERATION IN THIS AREA LIMITED BY R DS (on) msec msec V GS = V V SD, Source-to-Drain Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage. Tc = 25 C Tj = 75 C Single Pulse.. DC V DS, Drain-to-Source Voltage (V) Fig. Maximum Safe Operating Area Id =.ma T J, Temperature ( C ) V DS, Drain-to-Source Voltage (V) Fig. Drain-to-Source Breakdown Voltage Fig 2. Typical C oss Stored Energy R DS (on), Drain-to -Source On Resistance (m ) VGS = 5.5V VGS = 6.V VGS = 7.V VGS = 8.V VGS = V I D, Drain Current (A) Fig 3. Typical On-Resistance vs. Drain Current International Rectifier Submit Datasheet Feedback January, 24

6 E AR, Avalanche Energy (mj) Thermal Response ( Z thjc ) C/W.. D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig 4. Maximum Effective Transient Thermal Impedance, Junction-to-Case Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse) Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 5. Avalanche Current vs. Pulse Width TOP Single Pulse BOTTOM.% Duty Cycle I D = 45A Starting T J, Junction Temperature ( C) Fig 6. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 5, 6: (For further info, see AN-5 at failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = tav f Z thjc (D, t av ) = Transient thermal resistance, see Figures 4) PD (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av International Rectifier Submit Datasheet Feedback January, 24

7 Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) I RRM (A) I F = 3A V R = 5V T J = 25 C ID = µa ID = 25µA ID =.ma ID =.A T J, Temperature ( C ) di F /dt (A/µs) Fig 7. Threshold Voltage vs. Temperature Fig 8. Typical Recovery Current vs. dif/dt I F = 45A V R = 5V T J = 25 C I F = 3A V R = 5V T J = 25 C di F /dt (A/µs) di F /dt (A/µs) Fig 9. Typical Recovery Current vs. dif/dt Fig 2. Typical Stored Charge vs. dif/dt I F = 45A V R = 5V T J = 25 C di F /dt (A/µs) Fig 2. Typical Stored Charge vs. dif/dt International Rectifier Submit Datasheet Feedback January, 24

8 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 2V tp D.U.T I AS. + - V DD A I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Vds Id Vgs VDD Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform International Rectifier Submit Datasheet Feedback January, 24

9 TO-22AB Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information E X A M P L E : T H IS IS A N IR F L O T C O D E ASSEM BLED O N W W 9, 2 IN TH E ASSEM BLY LIN E "C" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead - Free" IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E P A R T N U M B E R D A T E C O D E YEAR = 2 W EEK 9 LIN E C TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback January, 24

10 Qualification Information Qualification Level Industrial (per JEDEC JESD47F) Moisture Sensitivity Level TO-22 N/A RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245, USA To contact International Rectifier, please visit International Rectifier Submit Datasheet Feedback January, 24

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