AUTOMOTIVE MOSFET. I D = 140A Fast Switching
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1 IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω Ultra Low On-Resistance G Dynamic dv/dt Rating 175 C Operating Temperature I D = 140A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other TO-220AB applications. Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V 140 I T C = C Continuous Drain Current, V 10V 97 A I DM Pulsed Drain Current 550 P C = 25 C Power Dissipation 330 W Linear Derating Factor 2.2 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy 430 mj I AR Avalanche Current 82 A E AR Repetitive Avalanche Energy See Fig.12a, 12b, 15, 16 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.5 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.45 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 HEXFET(R) is a registered trademark of International Rectifier. PD B /06/02
2 IRF3808 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 75 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance mω V GS = 10V, I D = 82A V GS(th) Gate Threshold Voltage V V DS = 10V, I D = 250µA g fs Forward Transconductance S V DS = 25V, I D = 82A I DSS Drain-to-Source Leakage Current 20 V µa DS = 75V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 200 V GS = 20V na Gate-to-Source Reverse Leakage -200 V GS = -20V Q g Total Gate Charge I D = 82A Q gs Gate-to-Source Charge nc V DS = 60V Q gd Gate-to-Drain ("Miller") Charge V GS = 10V t d(on) Turn-On Delay Time 16 V DD = 38V t r Rise Time 140 I D = 82A ns t d(off) Turn-Off Delay Time 68 R G = 2.5Ω t f Fall Time 120 V GS = 10V Between lead, D L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact S C iss Input Capacitance 5310 V GS = 0V C oss Output Capacitance 890 pf V DS = 25V C rss Reverse Transfer Capacitance 130 ƒ = 1.0MHz, See Fig. 5 C oss Output Capacitance 6010 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 570 V GS = 0V, V DS = 60V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 1140 V GS = 0V, V DS = 0V to 60V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 140 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 550 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 82A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 82A Q rr Reverse RecoveryCharge nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting T J = 25 C, L = 0.130mH R G = 25Ω, I AS = 82A. (See Figure 12). ƒ I SD 82A, di/dt 310A/µs, V DD V (BR)DSS, T J 175 C Pulse width 400µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 2
3 I D, Drain-to-Source Current (Α) IRF3808 I D, Drain-to-Source Current (A) 0 10 TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V I D, Drain-to-Source Current (A) 0 10 TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 137A T J = 175 C T J = 25 C V DS = 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) V GS = 10V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance(pF) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRF V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds C rss = C gd C oss = C ds C gd SHORTED I D = 82A V DS = 60V V DS = 37V V DS = 15V 00 0 Ciss Coss V GS, Gate-to-Source Voltage (V) Crss 1 10 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage T J = 175 C 0 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 25 C µsec 1.00 V GS = 0V V SD, Source-toDrain Voltage (V) 10 1 Tc = 25 C Tj = 175 C Single Pulse 1msec 10msec V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 IRF LIMITED BY PACKAGE V DS R D 120 R G V GS D.U.T. - V DD I D, Drain Current (A) V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature V DS 90% 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 V GS(th) Gate threshold Voltage (V) IRF V 800 I D V DS L DRIVER 640 TOP BOTTOM 34A 58A 82A R G 20V tp Fig 12a. Unclamped Inductive Test Circuit tp D.U.T I AS 0.01Ω V (BR)DSS - V DD A E AS, Single Pulse Avalanche Energy (mj) Starting Tj, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Q G Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V Q GS Q GD 3.5 V G 3.0 Current Regulator Same Type as D.U.T. Charge Fig 13a. Basic Gate Charge Waveform I D = 250µA 12V.2µF 50KΩ.3µF 1.5 V GS D.U.T. V - DS mA T J, Temperature ( C ) I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6
7 E AR, Avalanche Energy (mj) IRF Duty Cycle = Single Pulse Avalanche Current (A) 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses E E E E E E E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth TOP Single Pulse BOTTOM 10% Duty Cycle I D = 140A Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av Fig 16. Maximum Avalanche Energy Vs. Temperature 7
8 IRF3808 Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - V GS R G dv/dt controlled by R G I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive Period P.W. D = P.W. Period [ V GS =10V ] *** D.U.T. I SD Waveform Reverse Recovery Current Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Ripple 5% Forward Drop [ V DD ] [ ] I SD *** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET power MOSFETs 8
9 IRF3808 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) (.415) (.405) 3.78 (.14 9 ) 3.54 (.13 9 ) - A (.1 85 ) 4.20 (.1 65 ) - B (.052) 1.22 (.048) (.600) (.584) (.2 55 ) 6.10 (.2 40 ) (.045) MIN LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOU RC E 4 - DRAIN (.555) (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.0 55 ) 1.15 (.0 45 ) 2.54 (.) 3X 0.93 (.0 37 ) 0.69 (.0 27 ) 0.36 (.0 14 ) M B A M 3X 2.92 (.115) 2.64 (.104) 0.55 (.022) 0.46 (.018) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 C O N TR O L LIN G D IM E N S IO N : INC H 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N OT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive (Q101) market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information.02/02 9
10 Note: For the most current drawings please refer to the IR website at:
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationIRFR3806PbF IRFU3806PbF
PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFR1018EPbF IRFU1018EPbF
PD - 9729A IRFR8EPbF IRFU8EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationV DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationTO-220AB IRFB4610. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 7.6
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )
SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
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