IRLMS1503PbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View

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1 l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R S(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R S(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. G 2 IRLMS503PbF Top View HEXFET Power MOSFET A S Micro6 P V SS = 30V R S(on) = 0.0Ω Absolute Maximum Ratings Parameter Max. Units T A = 25 C Continuous rain Current, V 0V 3.2 T A = 70 C Continuous rain Current, V 0V 2.6 A I M Pulsed rain Current 8 A = 25 C Power issipation.7 W Linear erating Factor 3 mw/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Thermal Resistance Ratings Parameter Min. Typ. Max Units R θja Maximum Junction-to-Ambient 75 C/W /4/05

2 IRLMS503PbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µA V (BR)SS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = ma R S(on) Static rain-to-source On-Resistance 0.00 V GS = 0V, I = 2.2A ƒ Ω 0.20 V GS = 4.5V, I =.A ƒ V GS(th) Gate Threshold Voltage.0 V V S = V GS, I = 250µA g fs Forward Transconductance. S V S = 0V, I =.A I SS rain-to-source Leakage Current.0 V S = 24V, V GS = 0V µa 25 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V na Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge I = 2.2A Q gs Gate-to-Source Charge..7 nc V S = 24V Q gd Gate-to-rain ("Miller") Charge V GS = 0V, See Fig. 6 and 9 ƒ t d(on) Turn-On elay Time 4.6 V = 5V t r Rise Time 4.4 I = 2.2A ns t d(off) Turn-Off elay Time 0 R G = 6.0Ω t f Fall Time 2.0 R = 6.7Ω, See Fig. 0 ƒ C iss Input Capacitance 20 V GS = 0V C oss Output Capacitance 90 pf V S = 25V C rss Reverse Transfer Capacitance 32 ƒ =.0MHz, See Fig. 5 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol.7 (Body iode) showing the A I SM Pulsed Source Current integral reverse G 8 (Body iode) p-n junction diode. V S iode Forward Voltage.2V T J = 25 C, I S = 2.2A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.2A Q rr Reverse RecoveryCharge nc di/dt = 00A/µs ƒ S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) I S 2.2A, di/dt 50A/µs, V V (BR)SS, T J 50 C ƒ Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. 2

3 IRLMS503PbF I, rain-to-source Current (A) 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM3.0V 3.0V I, rain-to-source Current (A) 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM3.0V 3.0V 20µs PULSE WITH 0. T J = 25 C 0. 0 V S, rain-to-source Voltage (V) 20µs PULSE WITH 0. T J = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current (A) 00 0 T J = 25 C T J= 50 C V S= 0V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = 2.2A V GS = 0V T J, Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 IRLMS503PbF C, Capacitance (pf) 350 VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds SHORTE 300 Crss = Cgd Coss = Cds Cgd 250 C iss C oss C rss V S, rain-to-source Voltage (V) V GS, Gate-to-Source Voltage (V) I = 2.2A V S = 24V V S = 5V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current (A) 00 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) I, rain Current (A) 00 0 OPERATION IN THIS AREA LIMITE BY R S(on) 0us 00us ms 0ms TC = 25 C TJ = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 IRLMS503PbF Q G V S R 0V Q GS Q G R G V GS.U.T. V G 0V - V Charge Pulse Width µs uty Factor 0. % Fig 9a. Basic Gate Charge Waveform 2V V GS Current Regulator Same Type as.u.t..2µf 50KΩ.3µF.U.T. V - S Fig 0a. Switching Time Test Circuit V S 90% 0% V GS t d(on) t r t d(off) t f 3mA I G I Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thja ) 0 = SINGLE PULSE (THERMAL RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thja TA t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 IRLMS503PbF Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-Applied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 3. For N-channel HEXFET power MOSFET s 6

7 IRLMS503PbF Micro6 (SOT23 6L) Package Outline imensions are shown in milimeters (inches) 3.00 (.8 ) 2.80 (. ) -B- LEA ASSIGNMENTS RECOMMENE FOOTPRINT S 2X 0.95 (.0375 ).75 (.068 ).50 (.060 ) -A (.8 ) 2.60 (.03 ) (.087 ) 6X (.06 (.042 ) 0.95 (.0375 ) 2X 0.50 (.09 ) 6X 0.35 (.04 ) 0.5 (.006 ) M C A S B S G 6X 0.65 (.025 ).30 (.05 ) 0.90 (.036 ).45 (.057 ) 0.90 (.036 ) O O (.007 ) 6X 0.09 (.004 ) -C- 0.5 (.006 ) MAX. 0.0 (.004 ) 6 SURFACES 0.60 (.023 ) 0.0 (.004 ) NOTES :. IMENSIONING & TOLERANCING PER ANSI Y4.5M CONTROLLING IMENSION : MILLIMETER. 3. IMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Micro6 (SOT23 6L) Part Marking Information PART NUMBER PART NUMBER COE REFERENCE: A = IRLMS902 B = IRLMS 503 C = IRLMS6702 = IRLMS5703 E = IRLMS 6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 TOP Note: A line above the work week (as shown here) indicates Lead-Free. Y = YEAR W = WEEK LOT COE W = (-26) IF PRECEE BY LAST IGIT OF CALENAR YEAR W = (27-52) IF PRECEE BY A LETTER A 27 B 28 C E F G H J K YEAR YEAR Y Y WORK WEEK WORK WEEK W A B C X Y Z W A B C Y X Z

8 IRLMS503PbF Micro6 Tape & Reel Information imensions are shown in milimeters (inches) 8mm 4mm FEE IRECTION NOTES :. OUTLINE CONFORMS TO EIA-48 & EIA ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. ata and specifications subject to change without notice. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 0/05 8