W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
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1 IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability l Lead-Free G D S V DSS D HEXFET Power MOSFET R DS(on) typ. max. I D G S V 9.3mΩ.6mΩ 3A D 2 Pak IRF36SPbF G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 3 I T C = C I DM Continuous Drain Current, V V Pulsed Drain Current d 73 4 A P C = 25 C Maximum Power Dissipation 333 W Linear Derating Factor 2.2 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery f 23 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case) C Avalanche Characteristics E AS Single Pulse Avalanche Energy (Thermally Limited) d 460 mj I AR Avalanche Currentc See Fig. 4, 5, 22a, 22b A E AR Repetitive Avalanche Energy c mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case jk 0.50 C/W R θja Junction-to-Ambient (PCB Mount) i 40
2 IRF36SPbF (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0. V/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V gfs Forward Transconductance S R G Internal Gate Resistance 2.2 Ω I DSS Drain-to-Source Leakage Current 20 µa 250 I GSS Gate-to-Source Forward Leakage 200 na Gate-to-Source Reverse Leakage -200 (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Q g Total Gate Charge 50 nc Q gs Gate-to-Source Charge 23 Q gd Gate-to-Drain ("Miller") Charge 42 Q sync Total Gate Charge Sync. (Q g - Q gd ) 58 t d(on) Turn-On Delay Time 5 ns t r Rise Time 55 t d(off) Turn-Off Delay Time 77 t f Fall Time 43 C iss Input Capacitance 5380 pf C oss Output Capacitance 690 C rss Reverse Transfer Capacitance C oss eff. (ER) Effective Output Capacitance (Energy Related) 560 C oss eff. (TR) Effective Output Capacitance (Time Related) 750 Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 3 A Conditions V GS = 0V, I D = 250µA Reference to 25 C, I D =.0mAc V GS = V, I D = 62A f V DS = V GS, I D = 250µA V DS = 25V, I D = 62A V DS = V, V GS = 0V V DS = V, V GS = 0V, T J = 25 C V GS = 20V V GS = -20V I D = 62A V DS =50V V GS = V f I D = 62A, V DS =0V, V GS = V V DD = 65V I D = 62A R G = 2.7Ω Conditions V GS = V f V GS = 0V V DS = 25V ƒ =.0 MHz, See Fig. 5 V GS = 0V, V DS = 0V to 80V h, See Fig. V GS = 0V, V DS = 0V to 80V g Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 4 A integral reverse G (Body Diode)Ãd p-n junction diode. V SD Diode Forward Voltage.3 V, I S = 62A, V GS = 0V f t rr Reverse Recovery Time ns V R = 85V, 20 T J = 25 C I F = 62A Q rr Reverse Recovery Charge 570 nc di/dt = A/µs f 7 T J = 25 C I RRM Reverse Recovery Current -9.5 A t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSLD) D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L = 0.24mH R G = 50Ω, I AS = 62A, V GS =V. Part not recommended for use above this value. ƒ I SD 62A, di/dt 935A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 400µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. ˆ R θ is measured at T J approximately 90 C. R θjc value shown is at time zero. 2
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF36SPbF 0 VGS TOP 5V V 6.0V 5.0V 4.7V 4.5V 4.2V BOTTOM 4.0V 0 VGS TOP 5V V 6.0V 5.0V 4.7V 4.5V 4.2V BOTTOM 4.0V 4.0V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 4.0V 60µs PULSE WIDTH Tj = 75 C 0. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 T J = 75 C I D = 62A V GS = V V DS = 50V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss I D = 62A V DS = 80V V DS = 50V V DS = 20V 0 C oss C rss V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3
4 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRF36SPbF 0 00 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C 0 µs V GS = 0V V SD, Source-to-Drain Voltage (V) 20 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area I D =.0mA ms Tc = 25 C 3ms Tj = 75 C ms Single Pulse DC 0. 0 V DS, Drain-toSource Voltage (V) T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage I D TOP 3A 27A BOTTOM 62A V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent 4
5 E AR, Avalanche Energy (mj) Avalanche Current (A) IRF36SPbF Thermal Response ( Z thjc ) C/W D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc E-006 E t, Rectangular Pulse Duration (sec) 0 Fig 3. Maximum Effective Transient Thermal Impedance Junction-to-Case Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 50 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τj = 25 C and Tstart = 50 C. 0..0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 4. Typical Avalanche Current vs. Pulse Width TOP Single Pulse BOTTOM.0% Duty Cycle I D = 62A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 3, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) I RRM (A) IRF36SPbF I F = 4A V R = 85V T J = 25 C I D = 250µA 2.5 I D =.0mA 20 I D =.0A T J, Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature di F /dt (A/µs) Fig. 7 - Typical Recovery Current vs. di f /dt I F = 62A I F = 4A 50 V R = 85V 3500 V R = 85V 40 T J = 25 C 3000 T J = 25 C di F /dt (A/µs) di F /dt (A/µs) Fig. 8 - Typical Recovery Current vs. di f /dt Fig. 9 - Typical Stored Charge vs. di f /dt I F = 62A V R = 85V T J = 25 C di F /dt (A/µs) Fig Typical Stored Charge vs. di f /dt 6
7 IRF36SPbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 20V V GS tp D.U.T IAS 0.0Ω - V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 90% R G - V DD VV GS Pulse Width µs Duty Factor 0. % % V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 50KΩ Vgs 2V.2µF.3µF V GS D.U.T. V - DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr 7 Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
8 IRF36SPbF D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information Note: For the most current drawing please refer to IR website at 8
9 IRF36SPbF D 2 Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION.85 (.073).65 (.065).60 (.457).40 (.449) 5.42 (.609) 5.22 (.60) (.957) (.94) TRL.90 (.429).70 (.42) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MAX (2.362) MIN. NOTES :. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.039) (.96) (.97) MAX. 4 Note: For the most current drawing please refer to IR website at IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit 9
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IRF36STRLPBF
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationStrongIRFET IRFB7546PbF
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9728 IRFP336PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationStrongIRFET IRL40B215
I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 57
PD 9736A IRFB427PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationStrongIRFET IRL60B216
I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationStrongIRFET IRFB7740PbF
I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.5
PD 9747B IRFB377PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More information