W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.5
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1 PD 9747B IRFB377PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on) in TO22 l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability G D S V DSS HEXFET Power MOSFET R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) D 75V 2.8m: 3.3m: 21A c 12A S D G TO22AB IRFB377PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V 1V (Silicon Limited) 21c A I T C = 1 C Continuous Drain Current, V 1V (Silicon Limited) 15c I T C = 25 C Continuous Drain Current, V 1V (Wire Bond Limited) 12 I DM Pulsed Drain Current d 85 P C = 25 C Maximum Power Dissipation 37 W Linear Derating Factor 2.5 W/ C V GS GatetoSource Voltage ± 2 V dv/dt Peak Diode Recovery f 2.5 V/ns Operating Junction and 55 to 175 C T STG Storage Temperature Range Soldering Temperature, for 1 seconds (1.6mm from case) Mounting torque, 632 or M3 screw 3 1lbxin (1.1Nxm) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 2 mj I AR Avalanche Current d See Fig. 14, 15, 22a, 22b, A E AR Repetitive Avalanche Energy g mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc JunctiontoCase k.42 R θcs CasetoSink, Flat Greased Surface.5 C/W R θja JunctiontoAmbient jk /2/11
2 IRFB377PbF = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 75 V ΔV (BR)DSS /Δ Breakdown Voltage Temp. Coefficient.91 V/ C Reference to 25 C, I D = 5mAd R DS(on) Static DraintoSource OnResistance mω V GS = 1V, I D = 75A g V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25μA I DSS DraintoSource Leakage Current 2 μa V DS = 75V, V GS = V 25 V DS = 75V, V GS = V, = 125 C I GSS GatetoSource Forward Leakage 1 na V GS = 2V GatetoSource Reverse Leakage 1 V GS = 2V R G Gate Input Resistance 1.2 Ω f = 1MHz, open drain = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 16 S Q g Total Gate Charge nc Q gs GatetoSource Charge 37 Q gd GatetoDrain ("Miller") Charge 42 t d(on) TurnOn Delay Time 25 ns t r Rise Time 87 t d(off) TurnOff Delay Time 69 t f Fall Time 95 C iss Input Capacitance 94 pf C oss Output Capacitance 82 C rss Reverse Transfer Capacitance 35 C oss eff. (ER) Effective Output Capacitance (Energy Related)i 19 C oss eff. (TR) Effective Output Capacitance (Time Related)h 126 Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 21c A Conditions V GS = V, I D = 25μA Conditions V DS = 5V, I D = 75A I D = 75A V DS = 38V V GS = 1V g V DD = 38V I D = 75A R G = 2.1Ω V GS = 1V g V GS = V V DS = 5V ƒ = 1.MHz V GS = V, V DS = V to 6V j, See Fig.11 V GS = V, V DS = V to 6V h, See Fig. 5 Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 85 integral reverse G (Body Diode)di pn junction diode. V SD Diode Forward Voltage 1.3 V = 25 C, I S = 75A, V GS = V g t rr Reverse Recovery Time ns = 25 C V R = 64V, 5 75 = 125 C I F = 75A Q rr Reverse Recovery Charge nc = 25 C di/dt = 1A/μs g = 125 C I RRM Reverse Recovery Current 2.5 A = 25 C t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LSLD) D S Notes: Calculated continuous current based on maximum allowable junction Pulse width 4μs; duty cycle 2%. temperature. Bond wire current limit is 12A. Note that current C oss eff. (TR) is a fixed capacitance that gives the same charging time limitations arising from heating of the device leads may occur with as C oss while V DS is rising from to 8% V DSS. some lead mounting arrangements. C oss eff. (ER) is a fixed capacitance that gives the same energy as Repetitive rating; pulse width limited by max. junction C oss while V DS is rising from to 8% V DSS. temperature. ˆ When mounted on 1" square PCB (FR4 or G1 Material). For recom ƒ Limited by max, starting = 25 C, L =.28mH mended footprint and soldering techniques refer to application note #AN994. R G = 25Ω, I AS = 12A, V GS =1V. Part not recommended for use R θ is measured at approximately 9 C above this value. I SD 75A, di/dt 4A/μs, V DD V (BR)DSS, 175 C. 2
3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (Α) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRFB377PbF 1 VGS TOP 15V 1V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 1 VGS TOP 15V 1V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 4.5V 1 4.5V 1 1 6μs PULSE WIDTH Tj = 25 C V DS, DraintoSource Voltage (V) 1 6μs PULSE WIDTH Tj = 175 C V DS, DraintoSource Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 75A V GS = 1V 1 = 175 C = 25 C V DS = 25V 6μs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics , Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 2 16 I D = 75A V DS = 6V VDS= 38V VDS= 17V Ciss Coss Crss V DS, DraintoSource Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. DraintoSource Voltage Fig 6. Typical Gate Charge vs. GatetoSource Voltage 3
4 Energy (μj) E AS, Single Pulse Avalanche Energy (mj) I D, Drain Current (A) V (BR)DSS, DraintoSource Breakdown Voltage I D, DraintoSource Current (A) IRFB377PbF I SD, Reverse Drain Current (A) = 175 C = 25 C V GS = V V SD, SourcetoDrain Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage LIMITED BY PACKAGE LIMITED BY PACKAGE OPERATION IN THIS AREA LIMITED BY R DS (on) 1msec 1msec 1μsec 1 Tc = 25 C DC Tj = 175 C Single Pulse V DS, DraintoSource Voltage (V) Fig 8. Maximum Safe Operating Area T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature , Junction Temperature ( C) Fig 1. DraintoSource Breakdown Voltage I D TOP 22A 4A BOTTOM 12A V DS, DraintoSource Voltage (V) Starting, Junction Temperature ( C) Fig 11. Typical C OSS Stored Energy Fig 12. Maximum Avalanche Energy Vs. DrainCurrent 4
5 E AR, Avalanche Energy (mj) Avalanche Current (A) IRFB377PbF 1 Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3.1 1E6 1E Ci= τi/ri Ci τi/ri t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc Tc Fig 13. Maximum Effective Transient Thermal Impedance, JunctiontoCase τ C τ Ri ( C/W) τi (sec) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 15 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25 C and Tstart = 15 C. 1.E6 1.E5 1.E4 1.E3 1.E2 1.E1 TOP Single Pulse BOTTOM 1% Duty Cycle I D = 12A Starting, Junction Temperature ( C) Fig 15. Maximum Avalanche Energy vs. Temperature tav (sec) Fig 14. Typical Avalanche Current vs.pulsewidth Notes on Repetitive Avalanche Curves, Figures 14, 15: (For further info, see AN15 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 13) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc I av = 2DT/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 Q RR (nc) I RRM (A) Q RR (nc) V GS (th) Gate threshold Voltage (V) I RRM (A) IRFB377PbF 4. I D = 1.A I D = 1.mA I D = 25μA , Temperature ( C ) Fig 16. Threshold Voltage Vs. Temperature 8 I F = 3A V R = 64V 4 = 125 C = 25 C di f / dt (A / μs) Fig. 17 Typical Recovery Current vs. di f /dt I F = 45A V R = 64V 4 = 125 C = 25 C di f / dt (A / μs) Fig. 18 Typical Recovery Current vs. di f /dt I F = 3A 1 V R = 64V = 125 C = 25 C di f / dt (A / μs) Fig. 19 Typical Stored Charge vs. di f /dt I F = 45A 1 V R = 64V = 125 C = 25 C di f / dt (A / μs) Fig. 2 Typical Stored Charge vs. di f /dt 6
7 IRFB377PbF D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =1V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 15V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T I AS.1Ω V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms L D V DS V DD V DS 9% D.U.T 1% V GS Pulse Width < 1μs Duty Factor <.1% V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Vds Id Vgs 1K DUT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 7
8 IRFB377PbF TO22AB Package Outline (Dimensions are shown in millimeters (inches)) TO22AB Part Marking Information EXAMPLE: T HIS IS AN IRF11 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "LeadFree" INTERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEE K 19 LINE C TO22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 11N. Sepulveda, El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 5/211
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
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PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
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Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
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R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
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AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
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l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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