AUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
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1 Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings I T C = 25 C Parameter Continuous Drain Current, V V (Silicon Limited) IRFR37Z IRFU37Z HEXFET Power MOSFET V DSS = V R DS(on) = 18mΩ I D = 42A HEXFET is a registered trademark of International Rectifier. 1 G D S D-Pak IRFR37Z I-Pak IRFU37Z Units I T C = C Continuous Drain Current, V V 39 A I T C = 25 C Continuous Drain Current, V V (Package Limited) 42 I DM Pulsed Drain Current c 220 P C = 25 C Power Dissipation 140 W Linear Derating Factor 0.95 W/ C V GS Gate-to-Source Voltage ± 20 V E AS (Thermally limited) Single Pulse Avalanche Energyd 150 mj E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 200 I AR Avalanche Currentc See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy g mj T J Operating Junction and -55 to T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (1.6mm from case ) lbfyin (1.1Nym) Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.05 R θja Junction-to-Ambient (PCB mount) i 40 C/W R θja Junction-to-Ambient 1 Max. 56 PD A 11/13/06
2 IRFR/U37Z Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage V Conditions V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance mω V GS = V, I D = 33A e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA gfs Forward Transconductance 39 S V DS = 25V, I D = 33A I DSS Drain-to-Source Leakage Current 20 µa V DS = V, V GS = 0V 250 V DS = V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 na V GS = 20V Gate-to-Source Reverse Leakage -200 V GS = -20V Q g Total Gate Charge 69 I D = 33A Q gs Gate-to-Source Charge 15 nc V DS = 80V Q gd Gate-to-Drain ("Miller") Charge 25 V GS = V e t d(on) Turn-On Delay Time 14 V DD = 50V t r Rise Time 43 I D = 33A t d(off) Turn-Off Delay Time 53 ns R G = 6.8 Ω t f Fall Time 42 V GS = V e L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package and center of die contact S C iss Input Capacitance 2930 V GS = 0V C oss Output Capacitance 290 V DS = 25V C rss Reverse Transfer Capacitance 180 pf ƒ = 1.0MHz C oss Output Capacitance 1200 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 180 V GS = 0V, V DS = 80V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 430 V GS = 0V, V DS = 0V to 80V f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 56 MOSFET symbol D (Body Diode) A showing the I SM Pulsed Source Current 220 integral reverse G (Body Diode)Ãc p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 33A, V GS = 0V e t rr Reverse Recovery Time ns T J = 25 C, I F = 33A, V DD = 50V Q rr Reverse Recovery Charge nc di/dt = A/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2
3 I D, Drain-to-Source Current (Α) G fs, Forward Transconductance (S) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFR/U37Z 0 VGS TOP 15V V 6.0V 5.0V 4.8V 4.5V 4.3V BOTTOM 4.0V 0 VGS TOP 15V V 6.0V 5.0V 4.8V 4.5V 4.3V BOTTOM 4.0V 4.0V 4.0V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 1 60µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 T J = 175 C 80 T J = 25 C 60 T J = 25 C 40 T J = 175 C V DS = 25V 60µs PULSE WIDTH V DS = V V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 3
4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) IRFR/U37Z V GS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss I D = 33A V DS = 80V V DS = 50V V DS = 20V C oss C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on).00 T J = 175 C.00 µsec T J = 25 C 1.00 V GS = 0V V SD, Source-to-Drain Voltage (V) Tc = 25 C Tj = 175 C Single Pulse 1msec msec 1 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) IRFR/U37Z Limited By Package I D = 56A V GS = V T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Normalized On-Resistance vs. Temperature Thermal Response ( Z thjc ) D = R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ τ 2 τ 3 1 τ 2 τ 3 Ci= τi/ri Ci i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Ri ( C/W) τi (sec) τ C τ
6 V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) IRFR/U37Z V DS L 15V DRIVER I D TOP 3.4A 4.8A BOTTOM 33A R G 20V V GS tp D.U.T IAS 0.01Ω + - V DD A Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS Starting T J, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Q G Fig 12c. Maximum Avalanche Energy vs. Drain Current V Q GS Q GD 4.0 V G Charge Fig 13a. Basic Gate Charge Waveform 3.0 I D = 250µA K DUT L VCC T J, Temperature ( C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6
7 E AR, Avalanche Energy (mj) Avalanche Current (A) IRFR/U37Z 0 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses E E E E E E-01 tav (sec) Fig 15. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM 1% Duty Cycle I D = 33A Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc Fig 16. Maximum Avalanche Energy I av = 2DT/ [1.3 BV Z th ] vs. Temperature E AS (AR) = P D (ave) t av 7
8 IRFR/U37Z + - D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. + - V DD V Pulse Width 1 µs Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit V DS 90% % V GS t d(on) t r t d(off) t f Fig 18b. Switching Time Waveforms 8
9 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) IRFR/U37Z D-Pak (TO-252AA) Part Marking Information (;$03/( 7+,6,6$1,5)5 :,7+$66(0%/< /27&2'( $66(0%/('21::,17+($66(0%/</,1($ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH 3LQDVVHPEO\OLQHSRVLWLRQLQGLFDWHV /HDG)UHHTXDOLILFDWLRQWRWKHFRQVXPHUOHYHO,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'(,5)5 $ 3$57180%(5 '$7(&2'( <($5 :((. /,1($ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ 3 '(6,*1$7(6/($')5(( 352'8&748$/,),('727+( &21680(5/(9(/237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( 9,5)5 3$57180%(5
10 IRFR/U37Z I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information (;$03/( 7+,6,6$1,5)8 :,7+$66(0%/< /27&2'( $66(0%/('21::,17+($66(0%/</,1($ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'(,5)8 $ 3$57180%(5 '$7(&2'( <($5 :((. /,1($ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'(,5)8 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'(
11 IRFR/U37Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by T Jmax, starting T J = 25 C, L = 0.28mH R G = 25Ω, I AS = 33A, V GS =V. Part not recommended for use above this value. ƒ Pulse width 1.0ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. % tested to this value in production. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q1] market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.11/
12 Note: For the most current drawings please refer to the IR website at:
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More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRFS3004-7PPbF HEXFET Power MOSFET
PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationTO-220AB IRFB4610. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 7.6
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 27
PD 96329 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationAUTOMOTIVE GRADE. Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationW/ C V GS Gate-to-Source Voltage ±20 dv/dt Peak Diode Recovery f 4.6. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b, E AR
PD 97363 IRLB334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationW/ C V GS Gate-to-Source Voltage ±16 dv/dt Peak Diode Recovery f 8.0. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b E AR
PD 97357 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationAUTOMOTIVE GRADE. 56 I T C = 100 C Continuous Drain Current, V 10V. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
AUTOMOTIVE GRADE PD - 97451 AUIRFR37Z Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationIRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET
PD -9744A IRFS37PbF IRFSL37PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
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