IRFB3607PbF IRFS3607PbF IRFSL3607PbF

Transcription

1 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and ynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability G S V SS IRFB367PbF IRFS367PbF IRFSL367PbF R S(on) typ. max. I S G TO-22AB IRFB367PbF HEXFET Power MOSFET 75V 7.34m: 9.m: 8A G S Gate rain Source G S 2 Pak IRFS367PbF P C S G TO-262 IRFSL367PbF Absolute Maximum Ratings Symbol Parameter Max. Units 8c T C = 25 C Continuous rain Current, V T C = C Continuous rain Current, V V 56c A I M Pulsed rain Current d 3 C = 25 C Maximum Power issipation 14 W Linear erating Factor.96 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to 175 C T STG Storage Temperature Range Soldering Temperature, for seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 3 lbx in (1.1Nx m) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 12 mj I AR Avalanche Currentc 46 A E AR Repetitive Avalanche Energy g 14 mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case k 1.45 R CS Case-to-Sink, Flat Greased Surface, TO-22.5 C/W R JA Junction-to-Ambient, TO-22 j 62 R JA Junction-to-Ambient (PCB Mount), 2 Pak jk /2/12

2 IRFB/S/SL367PbF (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)SS rain-to-source Breakdown Voltage 75 V V (BR)SS / T J Breakdown Voltage Temp. Coefficient.96 V/ C R S(on) Static rain-to-source On-Resistance m V GS(th) Gate Threshold Voltage V I SS rain-to-source Leakage Current 2 μa 25 I GSS Gate-to-Source Forward Leakage na Gate-to-Source Reverse Leakage - (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 115 S Q g Total Gate Charge nc Q gs Gate-to-Source Charge 13 Q gd Gate-to-rain ("Miller") Charge 16 Q sync Total Gate Charge Sync. (Q g - Q gd ) 4 R G(int) Internal Gate Resistance.55 t d(on) Turn-On elay Time 16 ns t r Rise Time 1 t d(off) Turn-Off elay Time 43 t f Fall Time 96 C iss Input Capacitance 37 pf C oss Output Capacitance 28 C rss Reverse Transfer Capacitance 13 C oss eff. (ER) Effective Output Capacitance (Energy Related)j 38 C oss eff. (TR) Effective Output Capacitance (Time Related)h 6 iode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 8c A Conditions V GS = V, I = 25μA Reference to 25 C, I = 5mAd V GS = V, I = 46A g V S = V GS, I = μa V S = 75V, V GS = V V S = 6V, V GS = V, T J = 125 C V GS = 2V V GS = -2V Conditions V S = 5V, I = 46A I = 46A V S = 38V V GS = V g I = 46A, V S =V, V GS = V V = 49V I = 46A R G = 6.8 V GS = V g V GS = V V S = 5V ƒ = 1.MHz V GS = V, V S = V to 6V j V GS = V, V S = V to 6V h Conditions MOSFET symbol (Body iode) showing the I SM Pulsed Source Current 3 integral reverse G (Body iode)d p-n junction diode. S V S iode Forward Voltage 1.3 V, I S = 46A, V GS = V g dv/dt Peak iode Recovery 27 V/ns T J = 175 C, I S = 46A, V S = 75V f t rr Reverse Recovery Time 33 5 ns V R = 64V, T J = 125 C I F = 46A Q rr Reverse Recovery Charge nc di/dt = A/μs g T J = 125 C I RRM Reverse Recovery Current 1.9 A t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSL) Notes: I S 46A, di/dt 192A/μs, V V (BR)SS, T J 175 C. Calculated continuous current based on maximum allowable junction Pulse width 4μs; duty cycle 2%. temperature. Note that current limitations arising from heating of the C oss eff. (TR) is a fixed capacitance that gives the same charging time device leads may occur with some lead mounting arrangements. as C oss while V S is rising from to 8% V SS. Repetitive rating; pulse width limited by max. junction temperature. C oss eff. (ER) is a fixed capacitance that gives the same energy as ƒ Limited by T C oss while V S is rising from to 8% V SS. Jmax, starting, L =.12mH R ˆ When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. G = 25, I AS = 46A, V GS =V. Part not recommended for use above this value. R is measured at T J approximately 9 C. 2

3 V GS, Gate-to-Source Voltage (V) I, rain-to-source Current (A) R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) IRFB/S/SL367PbF VGS TOP 15V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V VGS TOP 15V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 4.5V 4.5V 6μs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics 6μs PULSE WITH Tj = 175 C.1 1 V S, rain-to-source Voltage (V) Fig 2. Typical Output Characteristics I = 8A V GS = V T J = 175 C V S = 25V 6μs PULSE WITH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature C, Capacitance (pf) C iss C oss V GS = V, f = 1 MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd I = 46A V S = 24V V S = 15V C rss V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3

4 Energy (μj) E AS, Single Pulse Avalanche Energy (mj) V (BR)SS, I, rain Current (A) rain-to-source Breakdown Voltage (V) I, rain-to-source Current (A) IRFB/S/SL367PbF OPERATION IN THIS AREA LIMITE BY R S (on) I S, Reverse rain Current (A) T J = 175 C 1 V GS = V V S, Source-to-rain Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage 1 Tc = 25 C Tj = 175 C Single Pulse 1msec C msec μsec 1 V S, rain-to-source Voltage (V) Fig 8. Maximum Safe Operating Area Id = 5mA T C, Case Temperature ( C) Fig 9. Maximum rain Current vs. Case Temperature T J, Temperature ( C ) Fig. rain-to-source Breakdown Voltage I TOP 5.6A 11A BOTTOM 46A V S, rain-to-source Voltage (V) Starting T J, Junction Temperature ( C) Fig 11. Typical C OSS Stored Energy Fig 12. Maximum Avalanche Energy vs. raincurrent 4

5 E AR, Avalanche Energy (mj) Avalanche Current (A) IRFB/S/SL367PbF. 1. =.5 Thermal Response ( Z thjc ) C/W R 1 R 1 R 2 R 2 R 3 R 3 J J Ci= i Ri Ci i Ri Notes: SINGLE PULSE 1. uty Factor = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc Tc. 1E-6 1E t 1, Rectangular Pulse uration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case R 4 R C Ri ( C/W) i (sec) uty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 15 C and Tstart =25 C (Single Pulse).5. 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 15 C..1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 14. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM 1.% uty Cycle I = 46A Notes on Repetitive Avalanche Curves, Figures 14, 15: (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. P (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = Average time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see Figures 13) Starting T J, Junction Temperature ( C) Fig 15. Maximum Avalanche Energy vs. Temperature P (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2T/ [1.3 BV Z th ] E AS (AR) = P (ave) t av 5

6 Q RR (A) I RR (A) Q RR (A) V GS(th), Gate Threshold Voltage (V) I RR (A) IRFB/S/SL367PbF I F = 31A V R = 64V T J = 125 C I = μa I = 25μA I = 1.mA I = 1.A T J, Temperature ( C ) Fig 16. Threshold Voltage vs. Temperature di F /dt (A/μs) Fig Typical Recovery Current vs. di f /dt 2 I F = 46A V R = 64V I F = 31A V R = 64V 15 T J = 125 C 4 T J = 125 C di F /dt (A/μs) di F /dt (A/μs) Fig Typical Recovery Current vs. di f /dt Fig Typical Stored Charge vs. di f /dt I F = 46A V R = 64V T J = 125 C di F /dt (A/μs) Fig. 2 - Typical Stored Charge vs. di f /dt 6

7 IRFB/S/SL367PbF -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-Applied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 2. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 15V tp V (BR)SS V S L RIVER R G 2V V GS tp.u.t IAS.1 - V A I AS Fig 21a. Unclamped Inductive Test Circuit Fig 21b. Unclamped Inductive Waveforms L V S V - V S 9%.U.T % V GS Pulse Width < 1μs uty Factor <.1% V GS t d(on) t r t d(off) t f Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms Vds Id Vgs 1K UT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform 7

8 IRFB/S/SL367PbF TO-22AB Package Outline (imensions are shown in millimeters (inches)) TO-22AB Part Marking Information (;$3/( 7,6,6$1,5) $66(%/('21::,17($66(%/</,1(& Note: "P" in assembly line position indicates "Lead-Free",17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( <($5 :((. /,1(& TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at 8

9 2 Pak (TO-263AB) Package Outline imensions are shown in millimeters (inches) IRFB/S/SL367PbF 2 Pak (TO-263AB) Part Marking Information 7,6,6$1,5)6:,7,17(51$7,21$/ $66(%/('21:: 5(&7,),(5,17($66(%/</,1(/ /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( <($5 :((. /,1(/ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at 9

10 IRFB/S/SL367PbF TO-262 Package Outline imensions are shown in millimeters (inches) TO-262 Part Marking Information (;$3/( 7,6,6$1,5// $66(%/('21::,17($66(%/</,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( <($5 :((. /,1(& 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at

11 IRFB/S/SL367PbF 2 Pak (TO-263AB) Tape & Reel Information imensions are shown in millimeters (inches) TRR 1.6 (.63) 1.5 (.59) 4. (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEE IRECTION TRL 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) (.69) (.61) 24.3 (.957) 23.9 (.941).9 (.429).7 (.421) 16. (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEE IRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING IMENSION: MILLIMETER. 3. IMENSION HUB. 4. INCLUES FLANGE OUTER EGE (1.39) 24.4 (.961) (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 1/