IRLR3915PbF IRLU3915PbF
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1 Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 75 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings IRLR395PbF IRLU395PbF HEXFET Power MOSFET V DSS = 55V R DS(on) = 4mΩ I D = 30A Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon limited) 6 I T C = 0 C Continuous Drain Current, V V (See Fig.9) 43 A I T C = 25 C Continuous Drain Current, V V (Package limited) 30 I DM Pulsed Drain Current 240 P C = 25 C Power Dissipation 20 W Linear Derating Factor 0.77 W/ C V GS Gate-to-Source Voltage ± 6 V E AS Single Pulse Avalanche Energy 200 mj E AS (6 sigma) Single Pulse Avalanche Energy Tested Value 600 I AR Avalanche Current See Fig.2a, 2b, 5, 6 A E AR Repetitive Avalanche Energy mj T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case ) C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case.3 R θja Junction-to-Ambient (PCB mount)ˆ 50 C/W R θja Junction-to-Ambient HEXFET(R) is a registered trademark of International Rectifier. G D S D-Pak IRLR395PbF PD B I-Pak IRLU395PbF /0/
2 IRLR/U395PbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 2 4 V GS = V, I D = 30A mω 4 7 V GS = 5.0V, I D = 26A V GS(th) Gate Threshold Voltage V V DS = V, I D = 250µA g fs Forward Transconductance 42 S V DS = 25V, I D = 30A I DSS Drain-to-Source Leakage Current 20 V DS = 55V, V GS = 0V µa 250 V DS = 55V, V GS = 0V, T J = 25 C Gate-to-Source Forward Leakage 200 V GS = 6V I GSS na Gate-to-Source Reverse Leakage -200 V GS = -6V Q g Total Gate Charge 6 92 I D = 30A Q gs Gate-to-Source Charge nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge 7 25 V GS = V t d(on) Turn-On Delay Time 7.4 V DD = 28V ns t r Rise Time 5 I D = 30A t d(off) Turn-Off Delay Time 83 R G = 8.5Ω t f Fall Time 0 V GS = V Between lead, D L D Internal Drain Inductance 4.5 nh 6mm (0.25in.) L S Internal Source Inductance 7.5 from package G and center of die contact S C iss Input Capacitance 870 V GS = 0V C oss Output Capacitance 390 V DS = 25V C rss Reverse Transfer Capacitance 74 pf ƒ =.0MHz, See Fig. 5 C oss Output Capacitance 2380 V GS = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 290 V GS = 0V, V DS = 44V, ƒ =.0MHz C oss eff. Effective Output Capacitance 540 V GS = 0V, V DS = 0V to 44V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 6 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G 240 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 30A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 30A, V DD = 25xjkl V Q rr Reverse Recovery Charge 70 nc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) 2
3 I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) G fs, Forward Transconductance (S) IRLR/U395PbF VGS TOP 5V V 5.0V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V V VGS TOP 5V V 5.0V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V V µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 0. 20µs PULSE WIDTH Tj = 75 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 25 C T J = 75 C T J = 25 C T J = 75 C V DS = 25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 3
4 I D, Drain-to-Source Current (A) C, Capacitance(pF) IRLR/U395PbF V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 2 I = D 30A V DS V DS V DS = 44V = 27V = V 00 0 C iss C oss C rss V GS, Gate-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) 0 I SD, Reverse Drain Current (A) T = 75 J C T = 25 J C V GS = 0 V V SD,Source-to-Drain Voltage (V) 0 Tc = 25 C Tj = 75 C Single Pulse 0µsec msec msec 0 00 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 IRLR/U395PbF 70 LIMITED BY PACKAGE 2.5 I D = 6A I D, Drain Current (A) T, Case Temperature ( C C) R DS(on), Drain-to-Source On Resistance (Normalized) V GS = V T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Normalized On-Resistance vs. Temperature Thermal Response (Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) P DM t t 2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc T C t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 V GS(th) Gate threshold Voltage (V) IRLR/U395PbF R G V DS 20V V GS tp Fig 2a. Unclamped Inductive Test Circuit tp L D.U.T IAS 0.0Ω V (BR)DSS 5V DRIVER - V DD A E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM Starting Tj, Junction Temperature ( C) I D 2A 2A 30A I AS Fig 2b. Unclamped Inductive Waveforms Q G Fig 2c. Maximum Avalanche Energy vs. Drain Current V Q GS Q GD 2.0 V G 2V V GS Current Regulator Same Type as D.U.T..2µF 50KΩ 3mA.3µF Charge Fig 3a. Basic Gate Charge Waveform D.U.T. V - DS.5 I D = 250µA T J, Temperature ( C ) I G I D Current Sampling Resistors Fig 3b. Gate Charge Test Circuit Fig 4. Threshold Voltage vs. Temperature 6
7 Avalanche Current (A) E AR, Avalanche Energy (mj) IRLR/U395PbF 00 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses 0..0E-08.0E-07.0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 5. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM % Duty Cycle I D = 30A Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 5, 6: (For further info, see AN-05 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 2a, 2b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 5, 6). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure ) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc Fig 6. Maximum Avalanche Energy I av = 2DT/ [.3 BV Z th ] vs. Temperature E AS (AR) = P D (ave) t av 7
8 IRLR/U395PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 7. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. - V DD V Pulse Width µs Duty Factor 0. % Fig 8a. Switching Time Test Circuit V DS 90% % V GS t d(on) t r t d(off) t f Fig 8b. Switching Time Waveforms 8
9 IRLR/U395PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR20 WITH ASSEMBLY LOT CODE 234 ASSEMBLED ON WW 6, 200 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE IRFR20 6A 2 34 PART NUMBER DATE CODE YEAR = 200 WEEK 6 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE IRFR PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR = 200 WEEK 6 A = ASSEMBLY SITE CODE Notes:. For an Automotive Qualified version of this part please seehttp:// 2. For the most current drawing please refer to IR website at 9
10 IRLR/U395PbF I-Pak (TO-25AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-25AA) Part Marking Information EXAMPLE: THIS IS AN IRFU20 WITH ASSEMBLY LOT CODE 5678 ASS EMBLED ON WW 9, 200 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU20 9A PART NUMBER DATE CODE YEAR = 200 WEEK 9 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR = 200 WEEK 9 A = AS S EMBLY S ITE CODE Notes:. For an Automotive Qualified version of this part please seehttp:// 2. For the most current drawing please refer to IR website at
11 IRLR/U395PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-48 & EIA INCH NOTES :. OUTLINE CONFORMS TO EIA-48. Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. ). Limited by T Jmax, starting T J = 25 C, L = 0.45mH, R G = 25Ω, I AS = 30A, V GS =V. Part not recommended for use above this value. ƒ I SD 30A, di/dt 280A/µs, V DD V (BR)DSS, T J 75 C. Pulse width.0ms; duty cycle 2%. 6 mm C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.2a, 2b, 5, 6 for typical repetitive avalanche performance. This value determined from sample failure population. 0% tested to this value in production. ˆ When mounted on " square PCB ( FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. /20
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Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95071A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
More informationIRFS4127PbF IRFSL4127PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRFS3004-7PPbF HEXFET Power MOSFET
PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationTO-220AB IRFB4610. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 7.6
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationAUTOMOTIVE GRADE. Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationV DSS R DS(on) max Qg. 380 P C = 25 C Maximum Power Dissipation 89 P C = 100 C Maximum Power Dissipation Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More information