W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
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1 PD IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS R DS(on) typ. max. I D V 3.3mΩ 4.mΩ 9A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability l LeadFree D G S S D 2 Pak 7 Pin S SS G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C 9 Continuous Drain Current, V V I T C = C Continuous Drain Current, V V 3 A I DM Pulsed Drain Current c 74 P C = 25 C Maximum Power Dissipation 38 W Linear Derating Factor 2.5 W/ C V GS GatetoSource Voltage ± 2 V dv/dt Peak Diode Recovery e 26 V/ns T J Operating Junction and 55 to 75 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 632 or M3 screw 3 lbxin (.Nxm) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy d 33 mj I AR Avalanche Current c See Fig. 4, 5, 22a, 22b, A E AR Repetitive Avalanche Energy f mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc JunctiontoCase jk.4 C/W R θja JunctiontoAmbient (PCB Mount) ij 4 /7/8
2 IRFS47PPbF (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C R DS(on) Static DraintoSource OnResistance mω V GS(th) Gate Threshold Voltage V I DSS DraintoSource Leakage Current 2 µa 25 I GSS GatetoSource Forward Leakage na GatetoSource Reverse Leakage R G(int) Internal Gate Resistance 2. Ω (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 2 S Q g Total Gate Charge 5 23 nc Q gs GatetoSource Charge 36 Q gd GatetoDrain ("Miller") Charge 48 Q sync Total Gate Charge Sync. (Q g Q gd ) 2 t d(on) TurnOn Delay Time 9 ns t r Rise Time 56 t d(off) TurnOff Delay Time t f Fall Time 48 C iss Input Capacitance 983 C oss Output Capacitance 65 C rss Reverse Transfer Capacitance 26 pf C oss eff. (ER) Effective Output Capacitance (Energy Related)h 73 C oss eff. (TR) Effective Output Capacitance (Time Related)g 74 Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 86 A Conditions V GS = V, I D = 25µA Reference to 25 C, I D = 5mAc V GS = V, I D = A f V DS = V GS, I D = 25µA V DS = V, V GS = V V DS = V, V GS = V, T J = 25 C V GS = 2V V GS = 2V Conditions V DS = 25V, I D = A I D = A V DS = 5V V GS = V f I D = A, V DS =V, V GS = V V DD = 65V I D = A R G = 2.7Ω V GS = V f V GS = V V DS = 5V ƒ =.MHz V GS = V, V DS = V to 8V h V GS = V, V DS = V to 8V g Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 74 integral reverse G (Body Diode)c pn junction diode. V SD Diode Forward Voltage.3 V, I S = A, V GS = V f t rr Reverse Recovery Time 6 ns V R = 85V, 67 T J = 25 C I F = A Q rr Reverse Recovery Charge 5 nc di/dt = A/µs f 8 T J = 25 C I RRM Reverse Recovery Current 4.7 A t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LSLD) D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L =.52mH R G = 25Ω, I AS = A, V GS =V. Part not recommended for use above this value. ƒ I SD A, di/dt 3A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. When mounted on " square PCB (FR4 or G Material). For recom mended footprint and soldering techniques refer to application note #AN994. ˆ R θ is measured at T J approximately 9 C. R θjc value shown is at time zero. 2
3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (A) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRFS47PPbF VGS TOP 5V V 8.V 7.V 5.V 4.5V 4.3V BOTTOM 4.V VGS TOP 5V V 8.V 7.V 5.V 4.5V 4.3V BOTTOM 4.V 4.V 6µs PULSE WIDTH Tj = 25 C V DS, DraintoSource Voltage (V) 4.V 6µs PULSE WIDTH Tj = 75 C V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 I D = A V GS = V T J = 75 C V DS = 5V 6µs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss I D = A V DS = 8V V DS = 5V 8. C oss C rss V DS, DraintoSource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. DraintoSource Voltage Fig 6. Typical Gate Charge vs. GatetoSource Voltage 3
4 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) DraintoSource Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, DraintoSource Current (A) IRFS47PPbF T J = 75 C OPERATION IN THIS AREA LIMITED BY R DS (on) µsec msec msec V GS = V V SD, SourcetoDrain Voltage (V) 8 6 Fig 7. Typical SourceDrain Diode Forward Voltage 25 2 DC Tc = 25 C Tj = 75 C Single Pulse V DS, DraintoSource Voltage (V) Fig 8. Maximum Safe Operating Area Id = 5mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. DraintoSource Breakdown Voltage I D TOP 2A 38A BOTTOM A V DS, DraintoSource Voltage (V) Starting T J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent 4
5 E AR, Avalanche Energy (mj) Avalanche Current (A) IRFS47PPbF Thermal Response ( Z thjc ) C/W.. D = SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i Ri R 4 Ri ( C/W) τi (sec) R Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc. E6 E5... t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, JunctiontoCase τ 4 τ 4 τ C τ Duty Cycle = Single Pulse. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse).5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τj = 25 C and Tstart = 5 C..E6.E5.E4.E3.E2.E tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM.% Duty Cycle I D = A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 Q RR (A) I RR (A) Q RR (A) V GS(th), Gate threshold Voltage (V) I RR (A) IRFS47PPbF I F = 74A V R = 85V T J = 25 C I D = 25µA I D =.ma I D =.A T J, Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature di F /dt (A/µs) Fig. 7 Typical Recovery Current vs. di f /dt 3 25 I F = A V R = 85V 9 8 I F = 74A V R = 85V 2 T J = 25 C 7 T J = 25 C di F /dt (A/µs) Fig. 8 Typical Recovery Current vs. di f /dt di F /dt (A/µs) Fig. 9 Typical Stored Charge vs. di f /dt I F = A V R = 85V T J = 25 C di F /dt (A/µs) Fig. 2 Typical Stored Charge vs. di f /dt 6
7 IRFS47PPbF D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T I AS.Ω V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G V DD VV GS Pulse Width µs Duty Factor % % V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 2V.2µF.3µF V GS D.U.T. V DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 7
8 IRFS47PPbF D 2 Pak 7 Pin Package Outline Dimensions are shown in millimeters (inches) Note: For the most current drawing please refer to IR website at 8
9 IRFS47PPbF D 2 Pak 7 Pin Part Marking Information 4 D 2 Pak 7 Pin Tape and Reel Note: For the most current drawing please refer to IR website at: Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. /8 9
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications l High frequency DCDC converters V DSS R DS(on) max I D 200V 0.040Ω 56A Benefits Low GatetoDrain Charge to Reduce Switching Losses Fully Characterized
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationV DSS. 40V R DS(on) typ. 1.4mΩ max. 1.8mΩ 250Ac. I D (Silicon Limited) I D (Package Limited) 195A. HEXFET Power MOSFET.
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationStrongIRFET IRFB7546PbF
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationIRF9910PbF HEXFET Power MOSFET R DS(on) max
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
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