1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
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1 PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D V DSS R DS(on) typ. max. I D (Silicon Limited) 24V.2m:.5m: 353Ac Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability l LeadFree S I D (Package Limited) S D G 95A TO220AB G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 353 c I T C = C Continuous Drain Current, V V (Silicon Limited) 249 c I T C = 25 C Continuous Drain Current, V V (Wire Bond Limited) 95 A I DM Pulsed Drain Current d 42 P C = 25 C Maximum Power Dissipation 300 W Linear Derating Factor W/ C V GS GatetoSource Voltage ± 20 V dv/dt Peak Diode Recovery f 0.46 V/ns T J Operating Junction and T STG Storage Temperature Range 55 to 75 Soldering Temperature, for seconds (.6mm from case) 300 C Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 270 mj I AR Avalanche Currentd See Fig. 4, 5, 22a, 22b A E AR Repetitive Avalanche Energy g mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc JunctiontoCase j 0.50 R θcs CasetoSink, Flat Greased Surface 0.50 R θja JunctiontoAmbient j 62 C/W 09/24/09
2 T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 22 mv/ C R DS(on) Static DraintoSource OnResistance.2.5 mω V GS(th) Gate Threshold Voltage 4.0 V I DSS DraintoSource Leakage Current 20 µa 250 I GSS GatetoSource Forward Leakage 200 na GatetoSource Reverse Leakage 200 R G Internal Gate Resistance 2.3 Ω T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 80 S Q g Total Gate Charge Q gs GatetoSource Charge 84 Q gd GatetoDrain ("Miller") Charge 49 nc Q sync Total Gate Charge Sync. (Q g Q gd ) 76 t d(on) TurnOn Delay Time 7 t r Rise Time 90 t d(off) TurnOff Delay Time 83 ns t f Fall Time 20 C iss Input Capacitance 7590 C oss Output Capacitance 3440 C rss Reverse Transfer Capacitance 960 pf C oss eff. (ER) Effective Output Capacitance (Energy Related) 4700 C oss eff. (TR) Effective Output Capacitance (Time Related) 4490 Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions V GS = 0V, I D = 250µA Reference to 25 C, I D = 5.0mAd V GS = V, I D = 95A g V DS = V GS, I D = 250µA V DS = 24V, V GS = 0V V DS = 24V, V GS = 0V, T J = 25 C V GS = 20V V GS = 20V Conditions V DS = V, I D = 95A I D = 95A V DS = 2V V GS = V g I D = 95A, V DS =0V, V GS = V V DD = 6V I D = 95A R G = 2.7Ω V GS = V g V GS = 0V V DS = 24V ƒ =.0 MHz, See Fig. 5 V GS = 0V, V DS = 0V to 9V i, See Fig. V GS = 0V, V DS = 0V to 9V h Conditions I S Continuous Source Current MOSFET symbol 353c (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 42 (Body Diode)Ãd pn junction diode. V SD Diode Forward Voltage.3 V T J = 25 C, I S = 95A, V GS = 0V g t rr Reverse Recovery Time 46 T J = 25 C V R = 20V, ns 7 T J = 25 C I F = 95A Q rr Reverse Recovery Charge 60 T J = 25 C di/dt = A/µs g nc 430 T J = 25 C I RRM Reverse Recovery Current 7.7 A T J = 25 C t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LSLD) D S Notes: Calcuted continuous current based on maximum allowable junction temperature Bond wire current limit is 95A. Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by T Jmax, starting T J = 25 C, L = 0.04mH R G = 25Ω, I AS = 95A, V GS =V. Part not recommended for use above this value. I SD 95A, di/dt 450 A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 400µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. ˆ R θ is measured at T J approximately 90 C 2
3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (A) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) µs PULSE WIDTH Tj = 25 C VGS TOP 5V V 8.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V 0 60µs PULSE WIDTH Tj = 75 C VGS TOP 5V V 8.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V 4.0V V DS, DraintoSource Voltage (V) 4.0V 0. V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 I D = 95A V GS = V T J = 75 C.5 T J = 25 C.0 V DS = 5V 60µs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature 000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = 95A V DS = 9V V DS = 2V C iss C oss 6.0 C rss V DS, DraintoSource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. DraintoSource Voltage Fig 6. Typical Gate Charge vs. GatetoSource Voltage 3
4 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) DraintoSource Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, DraintoSource Current (A) 0 00 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C 0 msec µsec T J = 25 C V GS = 0V Limited by package msec Tc = 25 C Tj = 75 C Single Pulse DC 400 V SD, SourcetoDrain Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage 32 V DS, DraintoSource Voltage (V) Fig 8. Maximum Safe Operating Area Id = 5mA Limited By Package T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. DraintoSource Breakdown Voltage I D TOP 44A 83A BOTTOM 95A V DS, DraintoSource Voltage (V) Starting T J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent 4
5 Avalanche Current (A) D = Thermal Response ( Z thjc ) C/W SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc 0.00 E006 E t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, JunctiontoCase τ 4 τ 4 τ C τ Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 50 C and Tstart =25 C (Single Pulse) 0. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25 C and Tstart = 50 C..0E06.0E05.0E04.0E03.0E02.0E0 tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth 5
6 V GS(th), Gate threshold Voltage (V) E AR, Avalanche Energy (mj) TOP Single Pulse BOTTOM.0% Duty Cycle I D = 95A Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av I D = 250µA I D =.0mA I D =.0A T J, Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature 6
7 D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 20V V GS tp D.U.T IAS 0.0Ω V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 90% R G V DD VV GS Pulse Width µs Duty Factor 0. % % V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 50KΩ Vgs 2V.2µF.3µF V GS D.U.T. V DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 7
8 TO220AB Package Outline Dimensions are shown in millimeters (inches) TO220AB Part Marking Information (;$03/( 7,6,6$,5) /27&2'( $66(0%/('2::,7($66(0%/</,(& RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$5780%(5 '$7(&2'( <($5 :((. /,(& TO220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 09/
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More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRF1704 Benefits AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationStrongIRFET IRL40B215
I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationV DSS. 40V R DS(on) typ. 1.4mΩ max. 1.8mΩ 250Ac. I D (Silicon Limited) I D (Package Limited) 195A. HEXFET Power MOSFET.
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationStrongIRFET IRFB7546PbF
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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