IRFS4227PbF IRFSL4227PbF
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- Joanna Hicks
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1 Features l Advanced Process Technology l Key Parameters Optimized for PP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power issipation in PP Sustain, Energy Recovery and Pass Switch Applications l Low Q G for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175 C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability PP SWITCH G IRFS4227PbF IRFSL4227PbF Key Parameters V S max 2 V V S (Avalanche) typ. 24 V R S(ON) 1V 22 m: I RP T C = 1 C 13 A T J max 175 C S S G 2 Pak IRFS4227PbF P A S G TO-262 IRFSL4227PbF escription G S Gate rain Source This HEXFET Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma isplay Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E PULSE rating. Additional features of this MOSFET are 175 C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PP driving applications Absolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ±3 V T C = 25 C Continuous rain Current, V 1V 62 T C = 1 C Continuous rain Current, V 1V 44 I M Pulsed rain Current c 26 A I T C = 1 C Repetitive Peak Current g 13 C = 25 C Power issipation 33 C = 1 C Power issipation 19 W Linear erating Factor 2.2 W/ C T J Operating Junction and -4 to 175 T STG Storage Temperature Range C Soldering Temperature for 1 seconds Mounting Torque, 6-32 or M3 Screw 3 1lbfxin (1.1Nxm) N Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case f.45* R θja Junction-to-Ambient (PCB Mounted) 2 Pak h 4 * R θjc (end of life) for 2 Pak and TO-262 =.65 C/W. This is the maximum measured value after 1 temperature cycles from -55 to 15 C and is accounted for by the physical wearout of the die attach medium. Notes through are on page /6/8
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 2 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 17 mv/ C R S(on) Static rain-to-source On-Resistance mω V GS(th) Gate Threshold Voltage V V GS(th) / T J Gate Threshold Voltage Coefficient -13 mv/ C I SS rain-to-source Leakage Current 2 µa 2 µa I GSS Gate-to-Source Forward Leakage 1 na Gate-to-Source Reverse Leakage -1 g fs Forward Transconductance 49 S Q g Total Gate Charge 7 98 nc Q gd Gate-to-rain Charge 23 t d(on) Turn-On elay Time 33 t r Rise Time 2 ns t d(off) Turn-Off elay Time 21 t f Fall Time 31 t st Shoot Through Blocking Time 1 ns 57 E PULSE Energy per Pulse µj C iss Input Capacitance 46 V GS = V C oss Output Capacitance 46 pf V S = 25V C rss Reverse Transfer Capacitance 91 ƒ = 1.MHz, C oss eff. Effective Output Capacitance 36 V GS = V, V S = V to 16V L Internal rain Inductance 4.5 Between lead, nh 6mm (.25in.) L S Internal Source Inductance 7.5 from package Avalanche Characteristics Parameter 91 Conditions V GS = V, I = 25µA Reference to 25 C, I = 1mA V GS = 1V, I = 46A e V S = V GS, I = 25µA V S = 2V, V GS = V V S = 2V, V GS = V, T J = 125 C V GS = 2V V GS = -2V V S = 25V, I = 46A V = 1V, I = 46A, V GS = 1Ve V = 16V, V GS = 15V, R G = 4.7Ω L = 22nH, C=.4µF, V GS = 15V V S = 16V, R G = 4.7Ω, T J = 25 C L = 22nH, C=.4µF, V GS = 15V V S = 16V, R G = 4.7Ω, T J = 1 C and center of die contact E AS Single Pulse Avalanche Energyd 14 mj E AR Repetitive Avalanche Energy c 46 mj V S(Avalanche) Repetitive Avalanche Voltagec 24 V I AS Avalanche Currentd 37 A Typ. V = 1V, V GS = 1Ve I = 46A R G = 2.5Ω See Fig. 22 Max. G Units S iode Characteristics Parameter Min. Typ. Max. Units I T C = 25 C Continuous Source Current 62 (Body iode) A I SM Pulsed Source Current (Body iode)c 26 V S iode Forward Voltage 1.3 V t rr Reverse Recovery Time 1 15 ns Q rr Reverse Recovery Charge nc Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 46A, V GS = V e T J = 25 C, I F = 46A, V = 5V di/dt = 1A/µs e 2
3 Energy per pulse (µj) Energy per pulse (µj) I, rain-to-source Current (Α) R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) IRFS/SL4227PbF 1 VGS TOP 15V 1V 8.V BOTTOM 7.V 7.V 1 1 VGS TOP 15V 1V 8.V BOTTOM 7.V 7.V 1 1 6µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics 1 6µs PULSE WITH Tj = 175 C V S, rain-to-source Voltage (V) Fig 2. Typical Output Characteristics 1. V S = 25V 6µs PULSE WITH 4. I = 46A V GS = 1V T J = 175 C T J = 25 C V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature L = 22nH C =.4µF 1 C 25 C 1 8 L = 22nH C = Variable 1 C 25 C V S, rain-to -Source Voltage (V) I, Peak rain Current (A) Fig 5. Typical E PULSE vs. rain-to-source Voltage Fig 6. Typical E PULSE vs. rain Current 3
4 I, rain Current (A) Energy per pulse (µj) I S, Reverse rain Current (A) I, rain-to-source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRFS/SL4227PbF 14 L = 22nH C=.4µF C=.3µF C=.2µF 1. T J = 175 C Temperature ( C) Fig 7. Typical E PULSE vs.temperature 1. T J = 25 C V GS = V V S, Source-to-rain Voltage (V) Fig 8. Typical Source-rain iode Forward Voltage 8 6 V GS = V, f = 1 MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 2 16 I = 46A V S = 16V V S = 1V V S = 4V Ciss Coss 4 Crss V S, rain-to-source Voltage (V) Fig 9. Typical Capacitance vs.rain-to-source Voltage Q G Total Gate Charge (nc) Fig 1. Typical Gate Charge vs.gate-to-source Voltage OPERATION IN THIS AREA LIMITE BY R S (on) 1µsec 1µsec 1µsec Tc = 25 C Tj = 175 C Single Pulse T C, CaseTemperature ( C) V S, rain-to-source Voltage (V) Fig 11. Maximum rain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area 4
5 V GS(th) Gate threshold Voltage (V) Repetitive Peak Current (A) R S (on), rain-to -Source On Resistance (Ω) E AS, Single Pulse Avalanche Energy (mj) IRFS/SL4227PbF I = 46A I TOP 8.5A 14A BOTTOM 37A.8 3 T J = 125 C 2.4. T J = 25 C V GS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature I = 25µA 2 16 ton= 1µs uty cycle =.25 Half Sine Wave Square Pulse T J, Temperature ( C ) Case Temperature ( C) Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs. Case temperature 1 = Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri 1E-6 1E t 1, Rectangular Pulse uration (sec) Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthjc Tc Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case Ri ( C/W) τi (sec) τ C τ
6 -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =1V V * R G di/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-Applied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 18. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs 15V tp V (BR)SS V S L RIVER R G 2V V GS tp.u.t IAS.1Ω - V A I AS Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Vds Id Vgs 1K UT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 2a. Gate Charge Test Circuit Fig 2b. Gate Charge Waveform 6
7 Fig 21a. t st and E PULSE Test Circuit Fig 21b. t st Test Waveforms Fig 21c. E PULSE Test Waveforms V S R V S 9% R G V GS.U.T. - V V GS Pulse Width 1 µs uty Factor.1 % 1% V GS t d(on) t r t d(off) t f Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms 7
8 2 Pak Package Outline (imensions are shown in millimeters (inches)) 2 Pak Part Marking Information 7,6,6$1,5)6:,7 $66(%/('21::,17($66(%/</,1(/ 1RWH3LQVVHPEO\OLQH SRVLWLRQLQGLFWHV/HG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( <($5 :((. /,1(/ OR,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at: 8
9 TO-262 Package Outline imensions are shown in millimeters (inches) TO-262 Part Marking Information (;$3/( 7,6,6$1,5// $66(%/('21::,17($66(%/</,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( <($5 :((. /,1(& 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at: 9
10 2 Pak Tape & Reel Information TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEE IRECTION TRL 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) (.69) (.61) 24.3 (.957) 23.9 (.941) 1.9 (.429) 1.7 (.421) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEE IRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING IMENSION: MILLIMETER. 3. IMENSION HUB. 4. INCLUES FLANGE OUTER EGE (1.39) 24.4 (.961) 3 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.2mH, R G = 25Ω, I AS = 37A. ƒ Pulse width 4µs; duty cycle 2%. R θ is measured at T J of approximately 9 C. Half sine wave with duty cycle =.25, ton=1µsec. When mounted on 1" square PCB (FR-4 or G-1 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Note: For the most current drawing please refer to IR website at: (1.197) MAX. 4 ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 12/28 1
G D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
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More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationIRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET
PD -9744A IRFS37PbF IRFSL37PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationIRF6633 DirectFET Power MOSFET
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationIRF6614PbF IRF6614TRPbF DirectFET Power MOSFET
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHS Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationIRL8113 IRL8113S IRL8113L
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationIRF6612PbF IRF661TRPbF
Typical R S(on) (mω) RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) pplication Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationIRFS3004-7PPbF HEXFET Power MOSFET
PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
P- 94036B SMPS MOSFET IRF747 Applications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationIRF9910PbF HEXFET Power MOSFET R DS(on) max
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationV DSS R DS(on) max I D. 20V GS = 10V 8.9A. 71 P A = 25 C Power Dissipation 2.0 P A = 70 C Power Dissipation Linear Derating Factor
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
More information30V GS = 10V 48nC GS = 4.5V
l Application Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF6665PbF IRF6665TRPbF
IGITL UIO MOSFET Features Latest MOSFET Silicon technology Key parameters optimized for Class- audio amplifier applications Low R S(on) for improved efficiency Low Q g for better TH and improved efficiency
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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