SMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
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- Mabel Wheeler
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1 Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN01) l Fully Characterized Avalanche Voltage and Current PROVISIONAL TO-220AB IRFB38N20DPbF IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters D 2 Pak IRFS38N20DPbF TO-262 IRFSL38N20DPbF Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 38* I T C = 0 C Continuous Drain Current, V V 27* A I DM Pulsed Drain Current 180 P A = 25 C Power Dissipation 3.8 W P C = 25 C Power Dissipation 230* Linear Derating Factor 1.5* W/ C V GS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ 9.5 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw lbf in (1.1N m) Thermal Resistance PD A V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) V 54 m: T J max 175 C Parameter Typ. Max. Units R θjc Junction-to-Case 0.47* R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient 40 * R θjc (end of life) for D 2 Pak and TO-262 = 0.50 C/W. This is the maximum measured value after 00 temperature cycles from -55 to 150 C and is accounted for by the physical wearout of the die attach medium. Notes through are on page /09/05
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.22 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance Ω V GS = V, I D = 26A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 25 V µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 0 V GS = 30V na Gate-to-Source Reverse Leakage -0 V GS = -30V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 17 S V DS = 50V, I D = 26A Q g Total Gate Charge I D = 26A Q gs Gate-to-Source Charge nc V DS = 0V Q gd Gate-to-Drain ("Miller") Charge V GS = V, t d(on) Turn-On Delay Time 16 V DD = 0V t r Rise Time 95 ns I D = 26A t d(off) Turn-Off Delay Time 29 R G = 2.5Ω t f Fall Time 47 V GS = V C iss Input Capacitance 2900 V GS = 0V C oss Output Capacitance 450 V DS = 25V C rss Reverse Transfer Capacitance 73 pf ƒ = 1.0MHz C oss Output Capacitance 3550 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 180 V GS = 0V, V DS = 160V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 380 V GS = 0V, V DS = 0V to 160V Avalanche Characteristics Parameter Min. Typ. Max. Units E AS Single Pulse Avalanche Energydh 460 mj I AR Avalanche Currentc 26 A E AR Repetitive Avalanche Energy c 390 mj V DS (Avalanche) Repetitive Avalanche Voltage c 260 V Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 44 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 180 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.5 V T J = 25 C, I S = 26A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 26A Q rr Reverse RecoveryCharge µc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) 2
3 I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) PROVISIONAL 00 0 VGS TOP 15V 12V V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 0 VGS TOP 15V 12V V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 5.0V V µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 44A 3.0 T J = 25 C 0.00 T J = 175 C.00 V DS = 15V 300µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance(pF) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) PROVISIONAL V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss 12 8 I D = 26A V DS = 160V V DS = 0V 00 6 Coss 4 0 Crss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) 0.00 T J = 175 C µsec T J = 25 C 1msec 1.00 V GS = 0V V SD, Source-toDrain Voltage (V) Tc = 25 C Tj = 175 C Single Pulse msec V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 50 V DS R D 40 R G V GS D.U.T. - V DD I D, Drain Current (A) V Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit V DS 90% T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 1 Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 15V V DS L DRIVER R G D.U.T I AS - V DD A 20V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS tp E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM Starting Tj, Junction Temperature ( C) I D 11A 19A 26A I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. V Q GS Q G Q GD 12V.2µF 50KΩ.3µF D.U.T. V - DS V G V GS 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs 7
8 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7,6,6$1,5),17(51$7,21$/ $66(0%/('21:: 5(&7,),(5,17($66(0%/</,1(& /2*2 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH $66(0%/< 3$57180%(5 '$7(&2'( <($5 :((. /,1(& 8
9 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information 7,6,6$1,5)6:,7,17(51$7,21$/ $66(0%/('21:: 5(&7,),(5,17($66(0%/</,1(/ /2*2 $66(0%/< )6 3$57180%(5 '$7(&2'( <($5 :((. /,1(/ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( 9 )6
10 TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE TO-262 Part Marking Information (;$03/( 7,6,6$1,5// $66(0%/('21::,17($66(0%/</,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< 3$57180%(5 '$7(&2'( <($5 :((. /,1(& 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'(
11 D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) (.457) (.449) 16. (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 1.3mH R G = 25Ω, I AS = 26A. ƒ I SD 26A, di/dt 390A/µs, V DD V (BR)DSS, T J 175 C. Pulse width 300µs; duty cycle 2%. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE. TO-220 package is not recommended for Surface Mount Application (1.039) (.961) (1.197) MAX. 4 C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. This is only applied to TO-220AB package. This is applied to D 2 Pak, when mounted on 1" square PCB (FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q1] (IRFB38N20DPbF), & Industrial (IRFS38N20DPbF/IRFSL38N20D) market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.09/
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More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Appications High frequency DC-DC converters Pasma Dispay Pane Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design, (See
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
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PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )
SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
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l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
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SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD- 9385A SMPS MOSFET IRFR8N5D IRFU8N5D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
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PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationTO-220AB IRFB4610. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 7.6
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
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