SMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
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1 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested Benefits PD D IRL3713 IRL3713S IRL3713L HEXFET Power MOSFET V DSS R DS(on) max (mw) I D 30V 3.0@V GS = 10V 260A l Ultra-Low Gate Impedance l l Very Low R DS(on) at 4.5V V GS Fully Characterized Avalanche Voltage and Current TO-220AB IRL3713 D 2 Pak IRL3713S TO-262 IRL3713L Absolute Maximum Ratings Symbol Parameter Max Units V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 20 V I T C = 25 C Continuous Drain Current, V 10V 260h I T C = C Continuous Drain Current, V 10V 180h A I DM Pulsed Drain Current c 1040h P C = 25 C Maximum Power Dissipation 330 P = C Maximum Power Dissipation 170 W Linear Derating Factor 2.2 W/ C T J, T STG Junction and Storage Temperature Range -55 to 175 C Thermal Resistance Symbol Parameter Typ Max Units R θjc Junction-to-Case i 0.45 R qcs Case-to-Sink, Flat, Greased Surface f 0.50 R θja Junction-to-Ambient fi C/W 62 R θja Junction-to-Ambient (PCB Mount) gi 40 Notes through are on page /12/03
2 T J = 25 C (unless otherwise specified) Symbol Parameter Min Typ Max Units V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance V GS = 10V, I D = 38A e mω V GS = 4.5V, I D = 30A e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA 50 V DS = 30V, V GS = 0V I DSS Drain-to-Source Leakage Current 20 µa V DS = 24V, V GS = 0V V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 20V na Gate-to-Source Reverse Leakage -200 V GS = -20V T J = 25 C (unless otherwise specified) Symbol Parameter Min Typ Max Units gfs Forward Transconductance 76 S Conditions V GS = 0V, I D = 250µA Conditions V DS = 15V, I D = 30A Q g Total Gate Charge I D = 30A Q gs Gate-to-Source Charge 24 nc V DS = 15V Q gd Gate-to-Drain ("Miller") Charge 37 V GS = 4.5V f Q OSS Output Gate Charge V GS = 0V, V DS = 15V R G Gate Resistance Ω t d(on) Turn-On Delay Time 16 V DD = 15V t r Rise Time 160 I D = 30A ns t d(off) Turn-Off Delay Time 40 R G = 1.8Ω t f Fall Time 57 V GS = 4.5V e C iss Input Capacitance 5890 V GS = 0V C oss Output Capacitance 3130 pf V DS = 15V C rss Reverse Transfer Capacitance 630 ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ Max Units E AS Single Pulse Avalanche Energyd 1530 mj I AR Avalanche CurrentÃc 46 A Diode Characteristics Symbol Parameter Min Typ Max Units Conditions I S I SM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ãch 260 h 1040 h A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage T J = 25 C, I S = 30A, V GS = 0V e V 0.68 T J = 125 C, I S = 30A, V GS = 0V e t rr Reverse Recovery Time ns T J = 25 C, I F = 30A, V R = 0V Q rr Reverse Recovery Charge nc di/dt = A/µs e t rr Reverse Recovery Time ns T J = 125 C, I F = 30A, V R = 20V Q rr Reverse Recovery Charge nc di/dt = A/µs e 2
3 I D, Drain-to-Source Current (A) 10 1 VGS TOP 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM 2.5V 2.5V I D, Drain-to-Source Current (A) 10 VGS TOP 10V 8.0V 6.0V 4.5V 4.0V 3.3V 2.8V BOTTOM2.5V 2.5V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH 1 T J = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 10 T J = 175 C T J = 25 C V DS= 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 260A V GS = 10V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance(pF) IRL3713/S/L 00 0 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss Crss V GS, Gate-to-Source Voltage (V) I D = 30A V DS = 24V V DS = 15V V DS = 6V 1 10 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 10 1 T J = 175 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 10us us 1ms TC = 25 C TJ = 175 C 10ms Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 300 LIMITED BY PACKAGE V DS R D 250 V GS D.U.T. R G I D, Drain Current (A) V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit - V DD 50 V DS 90% T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t Peak T J = P DM x Z thjc TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 R G V DS 20V V GS tp Fig 12a. Unclamped Inductive Test Circuit tp L D.U.T IAS 0.01Ω V (BR)DSS 15V DRIVER - V DD A E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D 30A 38A 46A Starting T, Junction Temperature ( J C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 10 V Q GS Q G Q GD 12V.2µF 50KΩ.3µF D.U.T. V - DS V G V GS 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =10V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs 7
8 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) (.415) (.405) 3.78 (.149) 3.54 (.139) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.255) 6.10 (.240) (.045) MIN LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN (.555) (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 1.15 (.045) 2.54 (.) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 2.92 (.115) 2.64 (.104) 0.55 (.022) 0.46 (.018) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO PART NUMBER LOT CODE DATE CODE 8
9 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information For GB Production THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO F530S PART NUMBER LOT CODE DATE CODE 9
10 TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLEC- TOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 10
11 D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) (.429) (.421) (.457) (.449) (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 1.4mH R G = 25Ω, I AS = 46A,V GS =10V ƒ Pulse width 400µs; duty cycle 2%. This is only applied to TO-220A package This is applied to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. R θ is measured at T J approximately 90 C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information. 11/
12 Note: For the most current drawings please refer to the IR website at:
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SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
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IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications l High frequency DCDC converters V DSS R DS(on) max I D 200V 0.040Ω 56A Benefits Low GatetoDrain Charge to Reduce Switching Losses Fully Characterized
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
More informationl Advanced Process Technology TO-220AB IRF640NPbF
查询 IRF640NLPBF 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationV DSS R DS(on) max Qg. 380 P C = 25 C Maximum Power Dissipation 89 P C = 100 C Maximum Power Dissipation Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95661 IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationParameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
More informationV DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationV DSS R DS(on) max (mω)
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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