SMPS MOSFET. V DSS R DS(on) max I D

Transcription

1 PD A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET Power MOSFET V DSS R DS(on) max I D 30V 12.5mΩ 61A Benefits l Ultra-Low Gate Impedance l Very Low R DS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3708 I-Pak IRFU3708 Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 12 V I T A = 25 C Continuous Drain Current, V V 61 I T A = 70 C Continuous Drain Current, V V 51 A I DM Pulsed Drain Current 244 P A = 25 C Maximum Power Dissipationƒ 87 W P A = 70 C Maximum Power Dissipationƒ 61 W Linear Derating Factor 0.58 W/ C T J, T STG Junction and Storage Temperature Range -55 to C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.73 R θja Junction-to-Ambient (PCB mount)* 50 C/W R θja Junction-to-Ambient 1 * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page /13/04

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA V GS = V, I D = 15A ƒ R DS(on) Static Drain-to-Source On-Resistance mω V GS = 4.5V, I D = 12A ƒ V GS = 2.8V, I D = 7.5A ƒ V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 20 V µa DS = 24V, V GS = 0V 0 V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 12V Gate-to-Source Reverse Leakage -200 na V GS = -12V T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 49 S V DS = 15V, I D = 50A Q g Total Gate Charge 24 I D = 24.8A Q gs Gate-to-Source Charge 6.7 nc V DS = 15V Q gd Gate-to-Drain ("Miller") Charge 5.8 V GS = 4.5V ƒ Q oss Output Gate Charge V GS = 0V, I D = 24.8A, V DS = 15V t d(on) Turn-On Delay Time 7.2 V DD = 15V t r Rise Time 50 I ns D = 24.8A t d(off) Turn-Off Delay Time 17.6 R G = 0.6Ω t f Fall Time 3.7 V GS = 4.5V ƒ C iss Input Capacitance 2417 V GS = 0V C oss Output Capacitance 707 V DS = 15V C rss Reverse Transfer Capacitance 52 pf ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 213 mj I AR Avalanche Current 62 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body Diode) 61 showing the A I G SM Pulsed Source Current integral reverse 244 (Body Diode) p-n junction diode V T V SD Diode Forward Voltage J = 25 C, I S = 31A, V GS = 0V ƒ 0.80 T J = 125 C, I S = 31A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time ns T J = 125 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge 70 5 nc di/dt = 0A/µs ƒ 2 D S

3 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFR/U3708PbF V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 1 20µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 175 C V DS= 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = 61A V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I = D 24.8A V DS = 15V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T = 175 J C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms ms TC = 25 C TJ = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 70 60 LIMITED BY PACKAGE V GS V DS R D D.U.T. R G I D, Drain Current (A) V Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit + - V DD V DS 90% T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t Peak T J= P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 R DS ( on ), Drain-to-Source On Resistance ( R DS(on), Drain-to -Source On Resistance ( IRFR/U3708PbF Ω ) Ω) VGS = 4.5V VGS = V I D = 31A I D, Drain Current ( A ) V GS, Gate -to -Source Voltage (V) 12V I AS V GS Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T..2µF 50KΩ 3mA.3µF I G D.U.T. I D Current Sampling Resistors + V - DS V GS Q GS Fig 14a&b. Gate Charge Test Circuit and Waveform tp V(BR)DSS R G V DS 20V V G tp L D.U.T I AS 0.01Ω Q G Q GD Charge 15V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) Fig 13. On-Resistance Vs. Gate Voltage I D TOP A 20.7A BOTTOM 24.8A Starting T, Junction Temperature ( J C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6

7 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU A PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SITE CODE 7

8 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S E MBLY LOT CODE IRFU A PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 19 LINE A OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DES IGNAT E S LE AD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = ASSEMBLY SITE CODE 8

9 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.7 mh R G = 25Ω, I AS = 24.8 A. ƒ Pulse width 300µs; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information12/04 9

10 Note: For the most current drawings please refer to the IR website at:

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