V DSS R DS(on) max I D 80V GS = 10V 3.6A

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1 HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 80V 73m:@ = 0V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN) l Fully Characterized Avalanche Voltage and Current S G S2 G Top View D D D2 D2 SO-8 Absolute Maximum Ratings Parameter Units V DS Drain-to-Source Voltage 80 V Gate-to-Source Voltage ± 20 I T A = 25 C Continuous Drain 0V 3.6 I T A = C Continuous Drain 0V 2.9 A I DM Pulsed Drain Current c 29 P A = 25 C Maximum Power Dissipation 2.0 W Linear Derating Factor 0.02 W/ C dv/dt Peak Diode Recovery dv/dt h 2.3 V/ns T J Operating Junction and -55 to 50 C T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-Drain Lead 42 C/W R θja Junction-to-Ambient (PCB Mount) f 62.5 Max. Notes through are on page International Rectifier September 6, 203

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 80 V = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.09 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 6 73 mω = 0V, I D = 2.2A e (th) Gate Threshold Voltage V V DS =, I D = 250µA I DSS Drain-to-Source Leakage Current 20 µa V DS = 80V, = 0V 250 V DS = 64V, = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 na = 20V Gate-to-Source Reverse Leakage -200 = -20V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 4.3 S V DS = 25V, I D = 2.2A Q g Total Gate Charge 5 23 I D = 2.2A Q gs Gate-to-Source Charge 2.9 nc V DS = 40V Q gd Gate-to-Drain ("Miller") Charge 4.5 = 0V e t d(on) Turn-On Delay Time 9.0 V DD = 40V t r Rise Time 0 I D = 2.2A t d(off) Turn-Off Delay Time 4 ns R G = 24Ω t f Fall Time 7 = 0V e C iss Input Capacitance 660 = 0V C oss Output Capacitance 0 V DS = 25V C rss Reverse Transfer Capacitance 5 pf ƒ =.0MHz C oss Output Capacitance 70 = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 72 = 0V, V DS = 64V, ƒ =.0MHz C oss eff. Effective Output Capacitance 40 = 0V, V DS = 0V to 64V g Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy cd 75 mj I AR Avalanche Currentc 2.2 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 3.6 A MOSFET symbol D (Body Diode) I SM Pulsed Source Current 29 A (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 50 ns Q rr Reverse Recovery Charge 0 nc showing the G integral reverse S p-n junction diode. T J = 25 C, I S = 2.2A, = 0V e T J = 25 C, I F = 2.2A, V DD = 40V di/dt = A/µs e International Rectifier Spetember 6, 203

3 I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF7380PbF 0 VGS TOP 5V 0V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V 0 VGS TOP 5V 0V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V V 3.7V µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 0. 20µs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 I D = 3.6A 0 T J = 50 C T J = 25 C V DS = 5V 20µs PULSE WIDTH , Gate-to-Source Voltage (V) RDS(on), Drain-to-Source On Resistance (Normalized) = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature International Rectifier September 6, 203

4 I D, Drain-to-Source Current (A) C, Capacitance(pF), Gate-to-Source Voltage (V) IRF7380PbF = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 2 0 I D = 2.A V DS = 64V V DS = 40V V DS = 6V 0 C iss 8 6 C oss 4 0 C rss 2 0 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD, Reverse Drain Current (A) 0 T = 25 J C T = 50 J C = 0 V V SD, Source-to-Drain Voltage (V) 0 0. Tc = 25 C Tj = 50 C Single Pulse OPERATION IN THIS AREA LIMITED BY R DS (on) µsec msec 0msec 0 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area International Rectifier Spetember 6, 203

5 4.0 V DS R D 3.0 R G D.U.T. - V DD I D, Drain Current (A) V Pulse Width µs Duty Factor 0. % Fig 0a. Switching Time Test Circuit T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current Vs. Ambient Temperature V DS 90% 0% t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms Thermal Response (Z thja ) 0 D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thja T A t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case International Rectifier September 6, 203

6 R DS (on), Drain-to-Source On Resistance (mω) IRF7380PbF 95 R DS(on), Drain-to -Source On Resistance (m Ω) = 0V I D = 3.6A I D, Drain Current (A) , Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. Drain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 2V.2µF 50KΩ.3µF D.U.T. V - DS V G Q GS Q G Q GD 200 I D 3mA I G I D Current Sampling Resistors Charge Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)DSS V DS L 5V DRIVER EAS, Single Pulse Avalanche Energy (mj) TOP BOTTOM.0A.8A 2.2A I AS R G 20V tp D.U.T I AS 0.0Ω - V DD A Starting T J, Junction Temperature ( C) Fig 5a&b. Unclamped Inductive Test circuit and Waveforms 6 Fig 5c. Maximum Avalanche Energy Vs. Drain Current International Rectifier Spetember 6, 203

7 SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' % ',0,&(6 0, 0; 0,//,0(7(56 0, 0; ( >@ E F ' ( H %6,& %6,& H %6,& %6,& ; H. / \ ƒ ƒ ƒ ƒ H.[ƒ & \ ;E >@ ;/ ;F >@ & % 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,20,//,0(7(5 ',0(6,265(62:,0,//,0(7(56>,&(6@ 287/,(&2) ('(&287/,(06 ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2,67(/(*72)/(')2562/'(5,*72 68%6757( >@ )22735,7 ;>@ ;>@ ;>@ SO-8 Part Marking Information (;03/(7,6,6,5)026)(7,7(57,2/ 5(&7,),(5 /2*2 ) ;;;; '7(&2'(<:: 3 ',6*7(6/(')5(( 352'8&7237,2/ < /67',*,72)7(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( 35780%(5 Note: For the most current drawing please refer to IR website at: International Rectifier September 6, 203

8 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) Note: For the most current drawing please refer to IR website at: Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 3mH R G = 25Ω, I AS = 2.2A. ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. I SD 2.2A, di/dt 220A/µs, V DD V (BR)DSS,T J 50 C. Revision History Date Comments 09/6/203 ÃUpdated the Rthja from 50 C/W to 62.5 C/W, on page. ÃConverted the data sheet to IR Corproate Template. 8 IR WORLD HEADQUARTERS: 0 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit International Rectifier Spetember 6, 203

V DSS R DS(on) max I D

PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l