Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

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1 l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. G IRLR/U20NPbF HEXFET Power MOSFET D S PD V DSS = 0V R DS(on) = 85Ω I D = The D-PK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to.5 watts are possible in typical surface mount applications. D-PK TO-252 I-PK TO-25 bsolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V I T C = 0 C Continuous Drain Current, V V 7.0 I DM Pulsed Drain Current 35 P C = 25 C Power Dissipation 48 W Linear Derating Factor 0.32 W/ C V GS Gate-to-Source Voltage ± 6 V E S Single Pulse valanche Energy 85 mj I R valanche Current 6.0 E R Repetitive valanche Energy 4.8 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case ) C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 3. R θj Junction-to-mbient (PCB mount) ** 50 C/W R θj Junction-to-mbient 2/6/04

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 0 V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 2 V/ C Reference to 25 C, I D = m 85 V GS = V, I D = 6.0 R DS(on) Static Drain-to-Source On-Resistance W V GS = 5.0V, I D = V GS = 4.0V, I D = 5.0 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ g fs Forward Transconductance 3. S V DS = 25V, I D = 6.0 I DSS Drain-to-Source Leakage Current 25 V DS = 0V, V GS = 0V µ 250 V DS = 80V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 6V n Gate-to-Source Reverse Leakage -0 V GS = -6V Q g Total Gate Charge 20 I D = 6.0 Q gs Gate-to-Source Charge 4.6 nc V DS = 80V Q gd Gate-to-Drain ("Miller") Charge V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On Delay Time 4.0 V DD = 50V t r Rise Time 35 I ns D = 6.0 t d(off) Turn-Off Delay Time 23 R G = Ω, V GS = 5.0V t f L D L S Fall Time Internal Drain Inductance Internal Source Inductance nh R D = 8.2Ω, See Fig. Between lead, 6mm (0.25in.) G from package and center of die contact C iss Input Capacitance 440 V GS = 0V C oss Output Capacitance 97 pf V DS = 25V C rss Reverse Transfer Capacitance 50 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current integral reverse G 35 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 6.0, V GS = 0V t rr Reverse Recovery Time 60 ns T J = 25 C, I F =6.0 Q rr Reverse RecoveryCharge nc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by Pulse width 300µs; duty cycle 2%. max. junction temperature. ( See fig. ) V DD = 25V, starting T J = 25 C, L = 4.7mH This is applied for I-PK, L S of D-PK is measured between lead and R G = 25Ω, I S = 6.0. (See Figure 2) center of die contact ƒ I SD 6.0, di/dt 340/µs, V DD V (BR)DSS, Uses IRL520N data and test conditions. T J 75 C ** When mounted on " square PCB (FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #N D S

3 I D, Drain-to-Source Current () 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V I D, Drain-to-Source Current () 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH T J = 25 C 0 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 75 C 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics and I D, Drain-to-Source Current () 0 T = 25 C J T = 75 C J V DS = 50V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D = V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = Cgd C oss = C ds Cgd C iss C oss C rss V, Gate-to-Source Voltage (V) GS I = 6.0 D V DS = 80V V DS = 50V V DS = 20V 0 0 V DS, Drain-to-Source Voltage (V) 0 FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current () 0 T = 75 C J T = 25 C J V GS = 0V V SD, Source-to-Drain Voltage (V) I D, Drain Current () 0 OPERTION IN THIS RE LIMITED BY RDS(on) µs 0µs ms ms T C = 25 C T J = 75 C Single Pulse 0 00 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 V DS R D I D, Drain Current (mps) R G V GS 5.0V Pulse Width µs Duty Factor % D.U.T. Fig a. Switching Time Test Circuit - V DD 2 V DS 90% T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 5V V DS L DRIVER R G D.U.T I S - V DD V tp 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS tp E S, Single Pulse valanche Energy (mj) ID TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. Drain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q GD D.U.T. V - DS V GS V G 3m Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-pplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFETS 7

8 D-Pak (TO-252) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252) Part Marking Information EXMPLE: THIS IS N IRFR20 WITH SSEMBLY LOT CODE 234 SSEMBLED ON WW 6, 999 IN THE SSEMBLY LINE "" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRFU PRT NUMBER DTE CODE YER 9 = 999 WEEK 6 LINE OR INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRFU PRT NUMBER DTE CODE P = DESIGNTES LED-FREE PRODUCT (OPTIONL) YER 9 = 999 WEEK 6 = SSEMBLY SITE CODE 8

9 I-Pak (TO-25) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-25) Part Marking Information EXMPLE: THIS IS N IRFU20 WITH SSEMBLY LOT CODE 5678 SSEMBLED ON WW 9, 999 IN THE SSEMBLY LINE "" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRFU PRT NUMBER DTE CODE YER 9 = 999 WEEK 9 LINE OR INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRFU PRT NUMBER DTE CODE P = DES IGNT E S LE D-F REE PRODUCT (OPTIONL) YER 9 = 999 WEEK 9 = SSEMBLY SITE CODE 9

10 D-Pak (TO-252) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EI-48 & EI INCH NOTES :. OUTLINE CONFORMS TO EI mm Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.2/04

11 Note: For the most current drawings please refer to the IR website at: