Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
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1 l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD C HEXFET Power MOSFET D S V DSS = 0V R DS(on) = 0.026Ω I D = 55 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL29L) is available for lowprofile applications. D 2 Pak TO-262 bsolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 55 I T C = 0 C Continuous Drain Current, V V 39 I DM Pulsed Drain Current 90 P = 25 C Power Dissipation 3.8 W P C = 25 C Power Dissipation 200 W Linear Derating Factor.3 W/ C V GS Gate-to-Source Voltage ± 6 V E S Single Pulse valanche Energy 520 mj I R valanche Current 29 E R Repetitive valanche Energy 20 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case ) C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.75 R θj Junction-to-mbient ( PCB Mounted,steady-state)** 40 C/W /09/03
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 0 V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I D = m V GS = V, I D = 29 R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 5.0V, I D = V GS = 4.0V, I D = 24 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ g fs Forward Transconductance 28 S V DS = 50V, I D = 29 I DSS Drain-to-Source Leakage Current 25 V DS = 0V, V GS = 0V µ 250 V DS = 80V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 6V n Gate-to-Source Reverse Leakage -0 V GS = -6V Q g Total Gate Charge 40 I D = 29 Q gs Gate-to-Source Charge 20 nc V DS = 80V Q gd Gate-to-Drain ("Miller") Charge 8 V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On Delay Time V DD = 50V t r Rise Time 0 ns I D = 29 t d(off) Turn-Off Delay Time 49 R G =.4Ω, V GS = 5.0V t f Fall Time 55 R D =.7Ω, See Fig. L S Internal Source Inductance 7.5 nh Between lead, and center of die contact C iss Input Capacitance 3700 V GS = 0V C oss Output Capacitance 630 pf V DS = 25V C rss Reverse Transfer Capacitance 330 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 55 (Body Diode) showing the G I SM Pulsed Source Current integral reverse 90 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 29, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 29 Q rr Reverse RecoveryCharge µc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by Pulse width 300µs; duty cycle 2%. max. junction temperature. ( See fig. ) V DD = 25V, starting T J = 25 C, L =.2mH Uses IRL29 data and test conditions R G = 25Ω, I S = 29. (See Figure 2) ƒ I SD 29, di/dt 490/µs, V DD V (BR)DSS, T J 75 C ** When mounted on " square PCB ( FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #N-994.
3 I D, Drain-to-Source Current () 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) I D, Drain-to-Source Current () 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current () 0 T = 25 C J T = 75 C J V DS = 50V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D = 48 V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
4 C, Capacitance (pf) 6000 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = Cgd 5000 C iss C oss = C ds Cgd C oss 2000 C rss 0 0 V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) I D = 29 V DS = 80V V DS = 50V V DS = 20V FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current () 0 T = 75 C J T = 25 C J V GS = 0V V SD, Source-to-Drain Voltage (V) I D, Drain Current () OPERTION IN THIS RE LIMITED BY RDS(on) µs 0 0µs ms ms T C = 25 C T J = 75 C Single Pulse 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea
5 50 V DS R D I D, Drain Current (mps) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V DS 90% R G V GS 5.0V Pulse Width µs Duty Factor 0. % D.U.T. % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms - V DD Thermal Response (Z thjc ) 0. D = SINGLE PULSE. Duty factor D = t / t 2 (THERML RESPONSE) 2. Peak T J = P DMx Z thjc T C Notes: t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 5V V DS L DRIVER R G D.U.T I S - V DD 20V tp 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS tp E S, Single Pulse valanche Energy (mj) TOP BOTTOM ID V DD = 25V Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. Drain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q GD D.U.T. V - DS V GS V G 3m Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-pplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFETS
8 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information THIS IS N IRF530S WITH LOT CODE 8024 SSEMBLED ON WW 02, 2000 IN THE SSEMBLY LINE "L" INTERNTIONL RECTIFIER LOGO S S E MB LY LOT CODE F530S PRT NUMBER DTE CODE YER 0 = 2000 WEEK 02 LINE L For GB Production THIS IS N IRF530S WITH LOT CODE 8024 SSEMBLED ON WW 02, 2000 IN THE SSEMBLY LINE "L" INTERNTIONL RECTIFIER LOGO F530S PRT NUMBER LOT CODE DTE CODE
9 TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT - GTE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXMPLE: THIS IS N IRL33L LOT CODE 789 SSEMBLED ON WW 9, 997 IN THE SS EMBLY LINE "C" INT ERNTIONL RECTIFIER LOGO S SEMBLY LOT CODE PRT NUMBER DTE CODE YER 7 = 997 WEEK 9 LINE C
10 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION TRL.85 (.073).65 (.065).90 (.429).70 (.42).60 (.457).40 (.449) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) (.957) (.94) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MX (2.362) MIN. NOTES :. COMFORMS TO EI CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLNGE OUTER EDGE (.039) (.96) (.97) MX. 4 Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information. /03
11 Note: For the most current drawings please refer to the IR website at:
D 2 Pak TO
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
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l l l l l l dvanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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l l l l l dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Logic Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR34) Straight Lead (IRLU34) dvanced Process Technoogy Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from
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SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs
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Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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Logic-Leve Gate Drive dvanced Process Technoogy Surface Mount (IRLZ34NS) Low-profie through-hoe (IRLZ34NL) 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description PD - 95583 IRLZ34NSPbF
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
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SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
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l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands
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Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits
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PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
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HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
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AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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