P C = 100 C Power Dissipation Linear Derating Factor

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1 PDP SWITCH PD IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch pplications l Low Q G for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l5 C Operating Junction Temperature for Improved Ruggedness l Repetitive valanche Capability for Robustness and Reliability Key Parameters V DS max 5 V V DS (valanche) typ. 8 V R DS(ON) V 2.2 m: I RP T C = C 6 T J max 5 C G D S D S D G TO-2B Full-Pak G D S Gate Drain Source Description This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E PULSE rating. dditional features of this MOSFET are 5 C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. bsolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ±3 V I T C = 25 C Continuous Drain Current, V V 34 I T C = C Continuous Drain Current, V V 2 I DM Pulsed Drain Current c 3 I T C = C Repetitive Peak Current g 6 P C = 25 C Power Dissipation 46 W P C = C Power Dissipation Linear Derating Factor 8.37 W/ C T J Operating Junction and -4 to 5 C T STG Storage Temperature Range Soldering Temperature for seconds Mounting Torque, 6-32 or M3 Screw 3 lbxin (.Nxm) N Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case f 2.73 C/W R θj Junction-to-mbient f 65 Notes through are on page 8 6/26/6

2 IRFI4228PbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 5 V ΒV DSS / T J Breakdown Voltage Temp. Coefficient 9 mv/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance mω V GS = V, I D = e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µ V GS(th) / T J Gate Threshold Voltage Coefficient -2 mv/ C I DSS Drain-to-Source Leakage Current µ V DS = 5V, V GS = V. m V DS = 5V, V GS = V, T J = 25 C I GSS Gate-to-Source Forward Leakage n V GS = V Gate-to-Source Reverse Leakage - V GS = -V g fs Forward Transconductance 64 S V DS = 25V, I D = Q g Total Gate Charge 73 nc V DD = 75V, I D =, V GS = Ve Q gd Gate-to-Drain Charge t st Shoot Through Blocking Time ns V DD = V, V GS = 5V, R G = 5.Ω L = 2nH, C=.3µF, V GS = 5V 62 E PULSE Energy per Pulse µj V DS = V, R G = 5.Ω, T J = 25 C L = 2nH, C=.3µF, V GS = 5V V DS = V, R G = 5.Ω, T J = C C iss Input Capacitance 456 V GS = V C oss Output Capacitance 56 pf V DS = 25V C rss Reverse Transfer Capacitance ƒ =.MHz C oss eff. Effective Output Capacitance 46 V GS = V, V DS = V to V L D Internal Drain Inductance 4.5 Between lead, nh 6mm (.25in.) L S Internal Source Inductance 7.5 from package and center of die contact valanche Characteristics Parameter E S Single Pulse valanche Energyd 7 mj E R Repetitive valanche Energy c 4.6 mj V DS(valanche) Repetitive valanche Voltagec 8 V I S valanche Currentd Diode Characteristics Parameter Min. Typ. Max. Units I T C = 25 C Continuous Source Current 34 (Body Diode) I SM Pulsed Source Current 3 (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 74 ns Q rr Reverse Recovery Charge nc Typ. Conditions V GS = V, I D = 25µ Max. MOSFET symbol showing the integral reverse Conditions G Units p-n junction diode. T J = 25 C, I S =, V GS = V e T J = 25 C, I F =, V DD = 5V di/dt = /µs e D S 2

3 Energy per Pulse (µj) Energy per Pulse (µj) I D, Drain-to-Source Current () R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current () I D, Drain-to-Source Current () IRFI4228PbF 6µs PULSE WIDTH Tj = 25 C VGS TOP 5V V 8.V 7.V 6.5V 6.V 5.5V BOTTOM 5.V VGS TOP 5V V 8.V 7.V 6.5V 6.V 5.5V BOTTOM 5.V 5.V 5.V.. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics V DS = 25V 6µs PULSE WIDTH 6µs PULSE WIDTH Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D = V GS = V T J = 5 C.5 T J = 25 C V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature L = 2nH C =.3µF C 25 C L = 2nH C = Variable C 25 C V DS, Drain-to-Source Voltage (V) I D, Peak Drain Current () Fig 5. Typical E PULSE vs. Drain-to-Source Voltage Fig 6. Typical E PULSE vs. Drain Current 3

4 I D, Drain Current () I D, Drain-to-Source Current () C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) Energy per Pulse (µj) I SD, Reverse Drain Current () IRFI4228PbF 4 L = 2nH C =.3µF 8 6 C =.2µF T J = 5 C T J = 25 C 4 C =.µf Temperature ( C) Fig 7. Typical E PULSE vs.temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss V GS = V V SD, Source-to-Drain Voltage (V) Fig 8. Typical Source-Drain Diode Forward Voltage 2. I D = V. DS = V V DS = 75V V DS = 3V 8. C oss 6. C rss V DS, Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.drain-to-source Voltage Q G, Total Gate Charge (nc) Fig. Typical Gate Charge vs.gate-to-source Voltage 35 3 OPERTION IN THIS RE LIMITED BY R DS (on) 25 µsec 5 msec msec Tc = 25 C Tj = 5 C Single Pulse T J, Junction Temperature ( C) V DS, Drain-to-Source Voltage (V) Fig. Maximum Drain Current vs. Case Temperature Fig 2. Maximum Safe Operating rea 4

5 V GS(th), Gate Threshold Voltage (V) Repetitive Peak Current () E S, Single Pulse valanche Energy (mj) R DS(on), Drain-to -Source On Resistance (m Ω) IRFI4228PbF 6 4 I D = I D TOP BOTTOM T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Fig 3. On-Resistance vs. Gate Voltage Starting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy vs. Temperature ton= µs Duty cycle =.25 Half Sine Wave Square Pulse I D = 25µ T J, Temperature ( C ) Fig 5. Threshold Voltage vs. Temperature Case Temperature ( C) Fig 6. Typical Repetitive peak Current vs. Case temperature Thermal Response ( Z thjc ).. D = R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci τi/ri τ C τ Ri ( C/W) τi (sec) SINGLE PULSE ( THERML RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 IRFI4228PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-pplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 8. Diode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G V V GS tp D.U.T I S.Ω - V DD I S Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms Vds Id Vgs K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig a. Gate Charge Test Circuit Fig b. Gate Charge Waveform 6

7 IRFI4228PbF RG DRIVER C L VCC B RG Ipulse DUT Fig 2a. t st and E PULSE Test Circuit Fig 2b. t st Test Waveforms Fig 2c. E PULSE Test Waveforms 7

8 IRFI4228PbF TO-2B Full-Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-2B Full-Pak Part Marking Information (;$3/( 7,6,6$,5),* :,7$66(%/< /27&2'( $66(%/('2::,7($66(%/</,(. RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< /27&2'(,5),*. 3$578%(5 '$7(&2'( <($5 :((. /,(. TO-2B Full-Pak packages are not recommended for Surface Mount pplication. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.85mH, R G = 25Ω, I S =. ƒ Pulse width 4µs; duty cycle 2%. R θ is measured at T J of approximately 9 C. Half sine wave with duty cycle =.25, ton=µsec. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information. 6/6 8

9 Note: For the most current drawings please refer to the IR website at: