SMPS MOSFET. V DSS R DS(on) max I D

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1 SMPS MOSFET PD A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN0) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR8N5DPbF I-Pak IRFU8N5DPbF Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 8 I T C = 0 C Continuous Drain Current, V V 3 A I DM Pulsed Drain Current 72 P C = 25 C Power Dissipation W Linear Derating Factor 0.7 W/ C V GS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ 3.3 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case ) C Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes through are on page 2/9/04

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 50 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.7 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 0.25 Ω V GS = V, I D = A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA 25 V µa DS = 50V, V GS = 0V I DSS Drain-to-Source Leakage Current 250 V DS = 20V, V GS = 0V, T J = 50 C Gate-to-Source Forward Leakage 0 V GS = 30V I GSS na Gate-to-Source Reverse Leakage -0 V GS = -30V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 4.2 S V DS = 50V, I D = A Q g Total Gate Charge I D = A Q gs Gate-to-Source Charge 7.6 nc V DS = 20V Q gd Gate-to-Drain ("Miller") Charge 4 2 V GS = V, t d(on) Turn-On Delay Time 8.8 V DD = 75V t r Rise Time 25 ns I D = A t d(off) Turn-Off Delay Time 5 R G = 6.8Ω t f Fall Time 9.8 V GS = V C iss Input Capacitance 900 V GS = 0V C oss Output Capacitance 90 V DS = 25V C rss Reverse Transfer Capacitance 49 pf ƒ =.0MHz C oss Output Capacitance 60 V GS = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 88 V GS = 0V, V DS = 20V, ƒ =.0MHz C oss eff. Effective Output Capacitance 95 V GS = 0V, V DS = 0V to 20V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 200 mj I AR Avalanche Current A E AR Repetitive Avalanche Energy mj Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case.4 R θja Junction-to-Ambient (PCB mount)* 50 C/W R θja Junction-to-Ambient Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 8 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 72 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = A Q rr Reverse RecoveryCharge nc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) 2

3 I D, Drain-to-Source Current (A) 0 VGS TOP 5V V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 6.0V I D, Drain-to-Source Current (A) 0 VGS TOP 5V V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 6.0V 20µs PULSE WIDTH 0. T J = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 0 T J = 75 C T J = 25 C V DS= 50V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 3.0 I D = 8A V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance(pF) IRFR/U8N5DPbF V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss Crss 0 00 V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) I = D A V DS = 20V V DS = 75V V DS = 30V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 0 T J = 75 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms TC = 25 C TJ = 75 C Single Pulse ms 0 00 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 20 V DS R D I D, Drain Current (A) Fig a. Switching Time Test Circuit V DS 90% R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. - V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t Peak T J = P DM x Z thjc TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 5V V DS L DRIVER R G D.U.T I AS - V DD A 20V tp 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS tp I AS Fig 2b. Unclamped Inductive Waveforms E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D 4.4A 9.0A A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. Q G 2V.2µF 50KΩ.3µF Q GS Q GD D.U.T. V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFET Power MOSFETs 7

8 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR20 WITH ASSEMBLY LOT CODE 234 ASSEMBLED ON WW 6, 999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU20 96A 2 34 PART NUMBER DATE CODE YEAR 9 = 999 WEEK 6 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S EMB LY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 999 WEEK 6 A = ASSEMBLY SITE CODE 8

9 I-Pak (TO-25AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-25AA) Part Marking Information EXAMPLE: THIS IS AN IRFU20 WITH ASSEMBLY LOT CODE 5678 AS SEMBLED ON WW 9, 999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE IRFU20 99A PART NUMBER DATE CODE YEAR 9 = 999 WEEK 9 LINE A OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 999 WEEK 9 A = ASSEMBLY SITE CODE 9

10 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-48 & EIA INCH NOTES :. OUTLINE CONFORMS TO EIA mm Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 3.3mH R G = 25Ω, I AS = A. ƒ I SD A, di/dt 70A/µs, V DD V (BR)DSS, T J 75 C Pulse width 300µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS * When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.2/04

11 Note: For the most current drawings please refer to the IR website at:

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