C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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1 dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P V SS = 55V R S(on) = 0.040Ω I = 29 escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220B bsolute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V 0V 29 T C = 00 C Continuous rain Current, V 0V 20 I M Pulsed rain Current 00 C = 25 C Power issipation 68 W Linear erating Factor 0.45 W/ C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy2 65 mj I R valanche Current 6 E R Repetitive valanche Energy 6.8 mj dv/dt Peak iode Recovery dv/dt V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew 0 lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case 2.2 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 /3/03
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m R S(ON) Static rain-to-source On-Resistance Ω V GS = 0V, I = 64 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 6.5 S V S = 25V, I = 6 25 V S = 55V, V GS = 0V I SS rain-to-source Leakage Current µ 250 V S = 44V, V GS = 0V, T J = 50 C Gate-to-Source Forward Leakage 00 V GS = 20V I GSS n Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Total Gate Charge 34 I = 6 Q gs Gate-to-Source Charge 6.8 nc V S = 44V Q gd Gate-to-rain ("Miller") Charge 4 V GS = 0V, See Fig. 6 and 3 4 t d(on) Turn-On elay Time 7.0 V = 28V t r Rise Time 49 I = 6 ns t d(off) Turn-Off elay Time 3 R G = 8Ω t f Fall Time 40 R =.8Ω, See Fig. 0 4 Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 240 pf V S = 25V C rss Reverse Transfer Capacitance 00 ƒ =.0MHz, See Fig. 5 S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 29 (Body iode) showing the I SM Pulsed Source Current integral reverse G 00 (Body iode) p-n junction diode. S V S iode Forward Voltage.6 V T J = 25 C, I S = 6, V GS = 0V 4 t rr Reverse Recovery Time ns T J = 25 C, I F = 6 Q rr Reverse Recovery Charge nc di/dt = 00/µs 4 t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) 3 I S 6, di/dt 420/µs, V V (BR)SS, T J 75 C 2 V = 25V, starting T J = 25 C, L = 40µH R G = 25Ω, I S = 6. (See Figure 2) 4 Pulse width 300µs; duty cycle 2%. 2
3 I, rain-to-source Current () VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to-source Current () VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH 0. T C = 25 C V S, rain-to-source Voltage (V) 20µs PULSE WITH 0. T C = 75 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 00 0 T = 25 C J T = 75 C J V S = 25V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) I = 26 V GS = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) 200 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd 000 C iss C oss = C ds Cgd 800 C oss C rss V S, rain-to-source Voltage (V) V, Gate-to-Source Voltage (V) GS I = 6 V S = 44V V S = 28V FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () T = 75 C J T = 25 C J V GS = 0V V S, Source-to-rain Voltage (V) I, rain Current () 000 OPERTION IN THIS RE LIMITE BY RS(on) 00 0µs 00µs 0 ms T C = 25 C T J = 75 C Single Pulse 0 00 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 30 V S R I, rain Current () R G V GS 0 V Pulse Width µs uty Factor 0. %.U.T. Fig 0a. Switching Time Test Circuit - V T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature V S 90% 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 0 Thermal Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thjc TC t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 L V S.U.T. R G V - 0 V I S t p 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)SS t p E S, Single Pulse valanche Energy (mj) I TOP 6.5 BOTTOM 6 V = 25V Starting T J, Junction Temperature ( C) V S V Fig 2c. Maximum valanche Energy Vs. rain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ 0 V Q GS Q G Q G 2V.2µF.3µF.U.T. V - S V GS V G 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6
7 Peak iode Recovery dv/dt Test Circuit.U.T 3 - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * VGS = 5V for Logic Level evices Fig 4. For N-Channel HEXFETS 7
8 TO-220B Package Outline imensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.03) 0.54 (.45) 0.29 (.405) 3.78 (.49) 3.54 (.39) (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) (.255) 6.0 (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LE SSIGNMENTS LE SSIGNMENTS HEXFET IGBTs, CoPCK - GTE - GTE 2 - RIN - GTE 2- RIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - RIN 3- EMITTER 4- RIN 4- COLLECTOR 3X.40 (.055).5 (.045) 2.54 (.00) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.04) IMENSIONING & TOLERNCING PER NSI Y4.5M, OUTLINE CONFORMS TO JEEC OUTLINE TO-220B. 2 CONTROLLING IMENSION : INCH 4 HETSINK & LE MESUREMENTS O NOT INCLUE BURRS. TO-220B Part Marking Information EXMPLE: THIS IS N IRF00 LOT COE 789 SSEMBLE ON WW 9, 997 IN THE SSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE PRT NUMBER TE COE YER 7 = 997 WEEK 9 LINE C ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.0/03 8
9 Note: For the most current drawings please refer to the IR website at:
Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationAbsolute Maximum Ratings
l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
More informationIRFZ34N PD C. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.040Ω I D = 29A. Thermal Resistance
l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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Generation V Technology l l Ultra Low OnResistance l PChannel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
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l Logic-Level Gate rive l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) Pchannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
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l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
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l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
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More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
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More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
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l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
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HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 8 S l ual N-Channel Mosfet 2 7 l Surface Mount G l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
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dvanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD 9.383 IRFP064N HEXFET Power MOSFET V DSS = 55V R DS(on)
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l l l l l dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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l l l l l Surface Mount (IRFR20N) Straight Lead (IRFU20N) dvanced Process Technology Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth
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Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
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Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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pplications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems 8 S 2 7 S
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Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier
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l dvanced Process Technology l Ultra Low OnResistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription Fifth Generation HEXFETs from International
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More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs
More informationW Linear Derating Factor 0.016
HEXFET Power MOSFET l Generation V Technology l Ultra Low OnResistance 8 S l ual PChannel Mosfet 2 7 G l Surface Mount l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
More informationIRL540NS/L. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.044Ω I D = 36A. Absolute Maximum Ratings. Thermal Resistance PD
l dvanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
More informationPRELIMINARY. Symbol Maximum Units N-Channel P-Channel Drain-Source Voltage V DS Gate-Source Voltage V GS ± 20 T A = 25 C 2.
l l l l l Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET Surface Mount Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing
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l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Surface Mount (IRF9Z34NS) l Lowprofile throughhole (IRF9Z34NL) l 175 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription G P 9.1525 IRF9Z34NS/L
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie ( mm) vaiabe in Tape and Ree Fast Switching S escription Fifth Generation HEXFETs from Internationa Rectifier utiize
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l LogicLevel Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationSMPS MOSFET. Symbol Parameter Max. Units
P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More informationIRFP450LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.40Ω I D = 14A
HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More informationV DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead g 20 C/W Junction-to-Ambient fg 50
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters Benefits l Very Low R S(on)
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationIRF7811AVPbF IRF7811AVPbF
P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications %
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationIRFS4227PbF IRFSL4227PbF
Features l Advanced Process Technology l Key Parameters Optimized for PP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power issipation in PP Sustain, Energy Recovery
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationIRF6612PbF IRF661TRPbF
Typical R S(on) (mω) RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) pplication Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l dvanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRF6633 DirectFET Power MOSFET
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationS2 1 G2 2 G1 4. RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9358PbF SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4000
P 9766 HEXFET Power MOSFET V S 3 V R S(on) max (@V GS = V) 6.3 mω S2 G2 2 8 7 2 2 R S(on) max (@V GS = 4.5V) 23.8 mω Q g (typical) 9 nc I (@T = 25 C) S 3 G 4 6 5 SO8 9.2 pplications Charge and ischarge
More informationAUTOMOTIVE GRADE A I DM P C = 25 C Power Dissipation 200 Linear Derating Factor. V/ns T J. Thermal Resistance Parameter Typ. Max.
UTOMOTIVE GRE P 96338 Features l dvanced Planar Technology l Low OnResistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Repetitive valanche llowed up
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOSFET P - 9576 IRF730PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching Lead-Free escription Fifth
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationSMPS MOSFET. V DSS Rds(on) max I D
pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9878C IRF830 HEXFET Power MOSFET V DSS Rds(on) max I D 500V.40Ω 5.0 Benefits l
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
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AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
More informationSMPS MOSFET. V DSS R DS(on) max I D
P- 94036B SMPS MOSFET IRF747 Applications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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