IRF7240PbF HEXFET Power MOSFET

Transcription

1 l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount vailable in Tape & Reel Lead-Free P IRF7240PbF HEXFET Power MOSFET V SS R S(on) max I -40V 0.05@V GS = -0V @V GS = -4.5V -8.4 escription These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S S S G Top View SO-8 bsolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage -40 V T = 25 C Continuous rain Current, V -0V -0.5 T = 70 C Continuous rain Current, V -0V -8.6 I M Pulsed rain Current -43 = 25 C Power issipation ƒ 2.5 = 70 C Power issipationƒ.6 W Linear erating Factor 20 mw/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θj Maximum Junction-to-mbientƒ 50 C/W 06/06/05

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -40 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance 0.05 V GS = -0V, I = -0.5 Ω V GS = -4.5V, I = -8.4 V GS(th) Gate Threshold Voltage V V S = V GS, I = -250µ g fs Forward Transconductance 7 S V S = -0V, I = -0.5 I SS rain-to-source Leakage Current -5 V S = -32V, V GS = 0V µ -25 V S = -32V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge 73 0 I = -0.5 Q gs Gate-to-Source Charge 3 47 nc V S = -20V Q gd Gate-to-rain ("Miller") Charge 7 26 V GS = -0V t d(on) Turn-On elay Time 52 V = -20V t r Rise Time 490 I = -.0 ns t d(off) Turn-Off elay Time 20 R G = 6.0Ω t f Fall Time 97 V GS = -0V C iss Input Capacitance 9250 V GS = 0V C oss Output Capacitance 580 pf V S = -25V C rss Reverse Transfer Capacitance 520 ƒ =.0kHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.5 (Body iode) showing the I SM Pulsed Source Current integral reverse G -43 (Body iode) p-n junction diode. S V S iode Forward Voltage -.2 V T J = 25 C, I S = -2.5, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -2.5 Q rr Reverse Recovery Charge 75 0 nc di/dt = -00/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in square Cu board, t 5sec. Pulse width 400µs; duty cycle 2%. 2

3 -I, rain-to-source Current () VGS TOP -5V -0V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.70V 20µs PULSE WITH 0.0 T J = 25 C V S, rain-to-source Voltage (V) -I, rain-to-source Current () VGS TOP -5V -0V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.70V 20µs PULSE WITH T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I, rain-to-source Current () T J = 50 C T J = 25 C V S= -25V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = V GS= -0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance(pF) IRF7240PbF Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd V S, rain-to-source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = -0.5 V S =-32V V S =-20V V S =-8V Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) -I I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00us ms 0ms T = 25 C TJ = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 2 V S R -I, rain Current () T C, Case Temperature ( C) R G V GS V GS Pulse Width µs uty Factor 0. %.U.T. V Fig 0a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f 0% + - Fig 9. Maximum rain Current Vs. Case Temperature 90% V S Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 = t 0. t2 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectangular Pulse uration (sec) PM Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 R S (on), rain-to-source On Resistance ( Ω) IRF7240PbF R S(on), rain-to -Source On Resistance (Ω) V GS = -4.5V I = -0.5 V GS = -0V V GS, Gate -to -Source Voltage (V) I, rain Current () Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. rain Current Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF Q GS Q G.U.T. + V S - V G V GS -3m Charge I G I Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6

7 -V GS(th), Variace ( V ) Power (W) IRF7240PbF I = -250µ T J, Temperature ( C ) Time (sec) Fig 5. Typical Vgs(th) Variance Vs. Juction Temperature Fig 6. Typical Power Vs. Time 7

8 SO-8 Package Outline imensions are shown in millimeters (inches) E 6 6X e B H 0.25 [.00] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RT E. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 T E COE (YWW) P = ES IGNT ES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER 8

9 SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.06/05 9