PRELIMINARY. Symbol Maximum Units N-Channel P-Channel Drain-Source Voltage V DS Gate-Source Voltage V GS ± 20 T A = 25 C 2.

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1 l l l l l Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET Surface Mount Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. PRELIMINRY P HEXFET Power MOSFET SO-8 Symbol Maximum Units N-Channel P-Channel rain-source oltage S 3-3 Gate-Source oltage GS ± 2 T = 25 C Continuous rain Current I T = 7 C Pulsed rain Current I M 3-3 Continuous Source Current (iode Conduction) I S Maximum Power issipation T = 25 C 2. P T = 7 C.3 W Single Pulse valanche Energy E S 82 4 mj valanche Current I R Repetitive valanche Energy E R.2 mj Peak iode Recovery dv/dt dv/dt / ns Junction and Storage Temperature Range T J, T STG -55 to + 5 C Thermal Resistance Ratings N-CHNNEL MOSFET 8 P-CHNNEL MO SFE T N-Ch P-Ch SS 3-3 R S(on).29Ω.58Ω Parameter Symbol Limit Units Maximum Junction-to-mbient R θj 62.5 C/W S G S2 G Top iew bsolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) /5/97

2 Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions N-Ch 3 GS =, I = 25µ (BR)SS rain-to-source Breakdown oltage P-Ch -3 GS =, I = -25µ N-Ch.22 Reference to 25 C, I = m (BR)SS / T J Breakdown oltage Temp. Coefficient P-Ch.22 / C Reference to 25 C, I = -m R S(ON) Static rain-to-source On-Resistance GS =, I = 5.8 N-Ch GS = 4.5, I = Ω GS = -, I = -4.9 P-Ch GS = -4.5, I = -3.6 N-Ch. S = GS, I = 25µ GS(th) Gate Threshold oltage P-Ch -. S = GS, I = -25µ N-Ch 4 S = 5, I = 5.8 g fs Forward Transconductance P-Ch 7.7 S S = -5, I = -4.9 N-Ch. S = 24, GS = P-Ch -. S = -24, GS = I SS rain-to-source Leakage Current N-Ch 25 µ S = 24, GS =, T J = 55 C P-Ch -25 S = -24, GS =, T J = 55 C I GSS Gate-to-Source Forward Leakage N-P ± n GS = ±2 N-Ch Q g Total Gate Charge P-Ch N-Channel N-Ch I = 5.8, S = 5, GS = Q gs Gate-to-Source Charge P-Ch nc P-Channel N-Ch Q gd Gate-to-rain ("Miller") Charge I P-Ch = -4.9, S = -5, GS = - N-Ch 8. 2 t d(on) Turn-On elay Time P-Ch 3 9 N-Channel N-Ch = 5, I =., R G = 6.Ω, t r Rise Time P-Ch 3 2 R = 5Ω N-Ch ns t d(off) Turn-Off elay Time P-Ch 34 5 P-Channel N-Ch 7 26 = -5, I = -., R G = 6.Ω, t f Fall Time R P-Ch = 5Ω C iss Input Capacitance N-Ch 65 N-Channel P-Ch 7 GS =, S = 25, ƒ =.MHz C oss Output Capacitance N-Ch 32 pf P-Ch 38 P-Channel C rss Reverse Transfer Capacitance N-Ch 3 P-Ch 8 GS =, S = -25, ƒ =.MHz Source-rain Ratings and Characteristics I S I SM S t rr Q rr Parameter Min. Typ. Max. Units Conditions Continuous Source Current (Body iode) N-Ch 2.5 P-Ch -2.5 Pulsed Source Current (Body iode) N-Ch 3 P-Ch -3 iode Forward oltage Reverse Recovery Time Reverse Recovery Charge N-Ch.78. T J = 25 C, I S =.7, GS = ƒ P-Ch , I S = -.7, GS = ƒ N-Ch ns N-Channel P-Ch 44 66, I F =.7, di/dt = /µs N-Ch nc P-Channel P-Ch 42 63, I F = -.7, di/dt = /µs Notes: Repetitive rating; pulse width limited by Pulse width 3µs; duty cycle 2%. max. junction temperature. ( See fig. 22 ) N-Channel I S 4., di/dt 74/µs, (BR)SS, T J 5 C Surface mounted on FR-4 board, t sec. P-Channel I S -2.8, di/dt 5/µs, (BR)SS, T J 5 C ƒ N-Channel Starting, L = mh R G = 25Ω, I S = 4.. (See Figure 2) P-Channel Starting, L = 35mH R G = 25Ω, I S = -2.8.

3 N-Channel I, rain-to-source Current () GS TOP BOTTOM I, rain-to-source Current () GS TOP BOTTOM µs PULSE WITH. S, rain-to-source oltage () 2µs PULSE WITH T J = 5 C. S, rain-to-source oltage () Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () T = 5 C J S = 2µs PULSE WITH GS, Gate-to-Source oltage () I S, Reverse rain Current () T J = 5 C GS = S, Source-to-rain oltage () Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-rain iode Forward oltage

4 N-Channel R S(on), rain-to-source On Resistance (Normalized) 2. I = GS = T J, Junction Temperature ( C) RS (on), rain-to-source On Resistance (Ω) = 4.5 GS GS = I, rain Current () Fig 5. Normalized On-Resistance s. Temperature Fig 6. Typical On-Resistance s. rain Current R S (on), rain-to-source On Resistance (Ω) GS I = 5.8, Gate-to-Source oltage () E S, Single Pulse valanche Energy (mj) Starting T, JJunction Temperature ( C) II TOP BOTTOM 4. Fig 7. Typical On-Resistance s. Gate oltage Fig 8. Maximum valanche Energy s. rain Current

5 N-Channel C, Capacitance (pf) GS =, f = MH z C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + C gd C is s C oss C rss GS, Gate-to-Source oltage () I = 5.8 S = 5 S, rain-to-source oltage () Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance s. rain-to-source oltage Fig. Typical Gate Charge s. Gate-to-Source oltage Thermal Response (Z thj ) Notes: SINGLE PULSE (THERML RESPONSE). uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectangular Pulse uration (sec) P M t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient

6 P-Channel -I, rain-to-source Current () GS TOP BOTTOM I, rain-to-source Current () GS TOP BOTTOM µs PULSE WITH. - S, rain-to-source oltage () 2µs PULSE WITH T J = 5 C. - S, rain-to-source oltage () Fig 2. Typical Output Characteristics Fig 3. Typical Output Characteristics -I, rain-to-source Current () T J = 5 C S = - 2µs PULSE WITH GS, Gate-to-Source oltage () -I S, Reverse rain Current () T J = 5 C GS = S, Source-to-rain oltage () Fig 4. Typical Transfer Characteristics Fig 5. Typical Source-rain iode Forward oltage

7 P-Channel R S(on), rain-to-source On Resistance (Normalized) 2. I = GS = T J, Junction Temperature ( C) RS(on), rain-to-source On Resistance ( Ω ) GS = GS = I, rain Current () Fig 6. Normalized On-Resistance s. Temperature Fig 7. Typical On-Resistance s. rain Current RS(on), rain-to-source On Resistance ( Ω ) I = GS, Gate -to-source oltage () E S, Single Pulse valanche Energy (mj) I TOP BOTTOM Starting T, Junction Temperature ( J C) Fig 8. Typical On-Resistance s. Gate oltage Fig 9. Maximum valanche Energy s. rain Current

8 P-Channel C, Capacitance (pf) GS = f = MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTE - GS, Gate-to-Source oltage () I = -4.9 S =-5 - S, rain-to-source oltage () Q G, Total Gate Charge (nc) Fig 2. Typical Capacitance s. rain-to-source oltage Fig 2. Typical Gate Charge s. Gate-to-Source oltage Thermal Response (Z thj ) Notes: SINGLE PULSE (THERML RESPONSE). uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectangular Pulse uration (sec) P M t t 2 Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-mbient

9 Package Outline SO8 Outline 5 E B H.25 (.) M M e 6X e K x 45 θ - C -. (.4) L 6 B 8X 8X.25 (.) M C S B S NOTES:. IMENSIONING N TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : INCH. 3. IMENSIONS RE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEEC OUTLINE MS-2. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE.25 (.6). 6 IMENSIONS IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE.. C 8X INCHES MILLIMETERS IM MIN MX MIN MX B C E e.5 BSIC.27 BSIC e.25 BSIC.635 BSIC H K L θ 8 8 RECOMMENE FOOTPRINT 6.46 (.255 ).27 (.5 ) 3X.72 (.28 ) 8X.78 (.7) 8X Part Marking Information SO8 EXMPLE : THIS IS N IRF7 INTERNTIONL RECTIFIER LOGO F7 TOP 32 TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK PRT NUMBER W FER LOT COE (LST 4 IGITS) XXXX BOTTOM

10 Tape & Reel Information SO8 imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) M X. NOTES :. CONTRO LLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.4 (.488 ) WORL HEQURTERS: 233 Kansas St., El Segundo, California 9245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 732 ictoria Park ve., Suite 2, Markham, Ontario L3R 2Z8, Tel: (95) IR GERMNY: Saalburgstrasse 57, 635 Bad Homburg Tel: IR ITLY: ia Liguria 49, 7 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #-2 Tan Boon Liat Building, Singapore 36 Tel: ata and specifications subject to change without notice. 9/97