IRFY9240CM HEXFET POWER MOSFET. Absolute Maximum Ratings. Product Summary. Features. Provisional Data Sheet No. PD 9.

Transcription

1 Provisional Data Sheet No. PD HEXFET POWER MOSFET IRFY9240CM P-CHNNEL -200 Volt, 0.51Ω HEXFET International Rectifier s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET power MOSFETs also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. Product Summary Part Number BV DSS R DS(on) I D IRFY9240CM -200V 0.51Ω -9.4 Features n Hermetically Sealed n Electrically Isolated n Simple Drive Requirements n Ease of Paralleling The HEXFET power MOSFET s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. bsolute Maximum Ratings Parameter IRFY9240CM Units VGS= -10V, TC = 25 C Continuous Drain Current -9.4 VGS= -10V, TC = 100 C Continuous Drain Current -6.0 IDM Pulsed Drain Current -36 TC = 25 C Max. Power Dissipation 100 W Linear Derating Factor 0.8 W/K VGS Gate-to-Source ±20 V ES Single Pulse valance Energy 700 mj IR valance Current -9.4 ER Repetitive valanche Energy 10 mj dv/dt Peak Diode Recovery dv/dt ƒ -5.5 V/ns TJ Operating Junction -55 to 150 Tstg Storage Temperature Range C Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical) g * I D current limited by pin diameter

2 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown -200 V VGS = 0V, ID = -1.0m BVDSS/ TJ Temperature Coefficient of Breakdown V/ C Reference to 25 C, ID = -1.0m RDS(on) Static Drain-to-Source 0.51 VGS = -10V, ID = -6.0 On-State Resistance 0.52 Ω VGS = -10V, ID = -9.4 VGS(th) Gate Threshold V VDS = VGS, ID = -250µ gfs Forward Transconductance 4.0 S ( ) VDS -15V, IDS = -6.0 IDSS Zero Gate Drain Current -25 VDS = 0.8 x max. rating,vgs = 0V µ -250 VDS = 0.8 x max. rating VGS = 0V, TJ = 125 C IGSS Gate-to-Source Leakage Forward -100 VGS = -20V n IGSS Gate-to-Source Leakage Reverse 100 VGS = 20V Qg Total Gate Charge VGS = -10V, ID = -9.4 Qgs Gate-to-Source Charge nc VDS = Max. Rating x 0.5 Qgd Gate-to-Drain ( Miller ) Charge see figures 6 and 13 td(on) Turn-On Delay Time 35 VDD = -100V, ID = -9.4 tr Rise Time 85 RG = 9.1Ω, VGS = -10V ns td(off) Turn-Off Delay Time 85 tf Fall Time 65 see figure 10 LD Internal Drain Inductance 8.7 LS Internal Source Inductance 8.7 Ciss Input Capacitance 1200 VGS = 0v, VDS = -25V Coss Output Capacitance 570 pf f = 1.0MHz. Crss Reverse Transfer Capacitance 81 see figure 5 nh Ω Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) -9.4 ISM Pulse Source Current (Body Diode) -36 VSD Diode Forward -4.6 V Tj = 25 C, IS = -9.4, VGS = 0V trr Reverse Recovery Time 440 ns Tj = 25 C, IF = -9.4, di/dt -100 /µs QRR Reverse Recovery Charge 7.2 µc VDD -50 V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case 1.25 RthJ Junction-to-mbient 80 K/W Typical socket mount RthCS Case-to-Sink 0.21 Mounting surface flat, smooth

3 Fig. 1 Typical Output Characteristics T C = 25 C Fig. 2 Typical Output Characteristics T C = 150 C -9.4 Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature -9.4 Fig. 5 Typical Capacitance vs. Drain-to-Source Fig. 6 Typical Gate Charge vs. Gate-to-Source

4 100 OPERTION IN THIS RE LIMITED B Y R DS(on) -I D, Drain Current () µs 1ms Fig. 7 Typical Source-to-Drain Diode Forward T C = 2 5 C T J = 150 C Single Pulse 10ms V DS, Drain-to-Source (V) Fig. 8 Maximum Safe Operating rea 10 Negative I D, Drain Current (mps) T C, Case Temperature ( C) Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 10a Switching Time Test Circuit Fig. 10b Switching Time Waveforms

5 10 Thermal Response (Z thjc ) D = SINGLE PULSE (THERML RESPONSE) t 1, Rectangular Pulse Duration (sec) Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms E S, Single Pulse valanche Energy (mj) I = V = -50 V Starting T J, Junction Temperature ( C) Fig. 12c Max. valanche Energy vs. Current Fig. 13a Gate Charge Test Circuit

6 Notes: Repetitive Rating; Pulse width limited by maximum junction temperature (see figure VDD = -50V, Starting TJ = 25 C, ES = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = -9.4, VGS = -10V, 25 RG 200Ω ƒ ISD -9.4, di/dt -150/µs, VDD BVDSS, TJ 150 C Pulse width 300 µs; Duty Cycle 2% K/W = C/W W/K = W/ C Fig. 13b Basic Gate Charge Waveform Case Outline and Dimensions Pin 1 - Drain Pin 2 - Source Pin 3 - Gate TO NON-STNDRD PIN CONFIGURTION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY9240C CUTION BERYLLI WRNING PER MIL-PRF Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. NOTES: 1. Dimensioning and tolerancing per NSI Y14.5M Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257 WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) IR CND: 7321 Victoria Park ve., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 157, Bad Homburg Tel: IR ITLY: Via Liguria 49, Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: IR SOUTHEST SI: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: Data and specifications subject to change without notice.8/96