IRHMS THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/713. Absolute Maximum Ratings
|
|
- Noel Kelley
- 5 years ago
- Views:
Transcription
1 PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS5976 JANSR2N755T V, P-CHANNEL REF: MIL-PRF-95/73 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS5976 K Rads (Si).5Ω -45A JANSR2N755T IRHMS5936 3K Rads (Si).5Ω -45A JANSF2N755T International Rectifier s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8 (MeV/(mg/cm 2 )).The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Absolute Maximum Ratings Parameter VGS = -2V, TC=25 C Continuous Drain Current -45 VGS = -2V, TC= C Continuous Drain Current IDM Pulsed Drain Current À -8 Units TC = 25 C Max. Power Dissipation 28 W Linear Derating Factor.67 W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy Á 48 mj IAR Avalanche Current À -45 A EAR Repetitive Avalanche Energy À 2.8 mj dv/dt Peak Diode Recovery dv/dt  -6. V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Lead Temperature 3 (.63in./.6mm from case for s) C Weight 9.3 (Typical) g For footnotes refer to the last page Low-Ohmic TO-254AA Features: n Single Event Effect (SEE) Hardened n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Ratings n Dynamic dv/dt Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electically Isolated n Ceramic Eyelets n Light Weight n High Electrical Conductive Package A 2/3/7
2 IRHMS5976, JANSR2N755T Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage - V VGS = V, ID = -.ma BVDSS/ TJ Temperature Coefficient of Breakdown -.3 V/ C Voltage Reference to 25 C, ID = -.ma RDS(on) Static Drain-to-Source On-State.5 Ω VGS = -2V, ID = -28.5A Ã Resistance VGS(th) Gate Threshold Voltage V VDS = VGS, ID = -.ma gfs Forward Transconductance 24 S VDS > -5V, IDS = -28.5A Ã IDSS Zero Gate Voltage Drain Current - VDS= -8V,VGS=V -25 µa VDS = -8V, VGS = V, TJ = 25 C IGSS Gate-to-Source Leakage Forward - VGS = -2V na IGSS Gate-to-Source Leakage Reverse VGS = 2V Qg Total Gate Charge 7 VGS =-2V, ID = -45A Qgs Gate-to-Source Charge 65 nc VDS = -5V Qgd Gate-to-Drain ( Miller ) Charge 3 td(on) Turn-On Delay Time 35 VDD = -5V, ID = -45A tr Rise Time ns VGS =-2V, RG =.2Ω td(off) Turn-Off Delay Time tf Fall Time LS + LD Total Inductance 6.8 nh Measured from Drain lead (6mm /.25in. from package) to Source lead (6mm /.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance 6 VGS = V, VDS = -25V Coss Output Capacitance 574 pf f =.MHz Crss Reverse Transfer Capacitance 5 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) -45 ISM Pulse Source Current (Body Diode) À -8 A VSD Diode Forward Voltage -5. V Tj = 25 C, IS = -45A, VGS = V Ã trr Reverse Recovery Time 2 ns Tj = 25 C, IF =-45A, di/dt -A/µs QRR Reverse Recovery Charge.6 µc VDD -5V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case.6 RthCS Case-to-Sink.2 C/W RthJA Junction-to-Ambient 48 Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2
3 Radiation Characteristics IRHMS5976, JANSR2N755T International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Tj = 25 C, Post Total Dose Irradiation ÄÅ Parameter K Rads(Si) 3KRads(Si) 2 Units Test Conditions Min Max Min Max BV DSS Drain-to-Source Breakdown Voltage - - V V GS = V, I D = -.ma VGS(th) Gate Threshold Voltage VGS = V DS, I D = -.ma I GSS Gate-to-Source Leakage Forward - - na V GS =-2V I GSS Gate-to-Source Leakage Reverse V GS = 2 V I DSS Zero Gate Voltage Drain Current - - µa V DS = -8V, V GS =V R DS(on) Static Drain-to-Source Ã.5.5 Ω VGS = -2V, I D =-28.5A On-State Resistance (TO-3) V SD Diode Forward Voltage à V V GS = V, IS = -45A. Part number IRHMS5976 (JANSR2N755T) 2. Part number IRHMS5936 (JANSF2N755T) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range V DS (V) (MeV/(mg/cm 2 )) @VGS=7.5V Br I Au VDS VGS Br I Au For footnotes refer to the last page Fig a. Single Event Effect, Safe Operating Area 3
4 IRHMS5976, JANSR2N755T -I D, Drain-to-Source Current (A) VGS TOP -5V -2V -V -9.V -8.V -7.V -6.V BOTTOM -5.V -5.V 2µs PULSE WIDTH T J = 25 C. -V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) VGS TOP -5V -2V -V -9.V -8.V -7.V -6.V BOTTOM-5.V -5.V 2µs PULSE WIDTH T J = 5 C. -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) T J = 25 C T J = 5 C V DS= 5-5V 2µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = -45A V GS = -2V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4
5 -I D, Drain-to-Source Current (A) IRHMS5976, JANSR2N755T C, Capacitance (pf) VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C iss C oss FOR TEST CIRCUIT C rss SEE FIGURE V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) -V GS, Gate-to-Source Voltage (V) I = D -45A V DS =-8V V DS =-5V V DS =-2V Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V V SD,Source-to-Drain Voltage (V) Tc = 25 C Tj = 5 C Single Pulse OPERATION IN THIS AREA LIMITED BY R DS (on) µs ms ms -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 5
6 -I D, Drain Current (A) IRHMS5976, JANSR2N755T 5 V DS R D 4 R G V GS D.U.T. + - V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature V GS Pulse Width µs Duty Factor. % Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % 9% V DS Fig b. Switching Time Waveforms D =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) E-6 E t, Rectangular Pulse Duration (sec) P DM t t 2 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6
7 IRHMS5976, JANSR2N755T Fig 2a. Unclamped Inductive Test Circuit I AS R G V DS -2V V GS tp I AS L D.U.T.Ω DRIVER - + 5V V DD A E AS, Single Pulse Avalanche Energy (mj) I D TOP -2A -28.5A BOTTOM -45A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -2 V Q GS Q G Q GD -2V.2µF 5KΩ.3µF D.U.T. - + V DS V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 7
8 IRHMS5976, JANSR2N755T Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -5V, starting TJ = 25 C, L=.48mH Peak IL = -45A, VGS = -2V Â ISD -45A, di/dt -365A/µs, VDD -V, TJ 5 C Case Outline and Dimensions Low-Omic TO-254AA 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] Ã Pulse width 3µs; Duty Cycle 2% Ä Total Dose Irradiation with VGS Bias. -2 volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Å Total Dose Irradiation with VDS Bias. -8 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. 6.6 [.26] 6.32 [.249].2 [.5].27 [.5].2 [.4] 7.4 [.685] 6.89 [.665] 2.32 [.8] 2.7 [.79] 3.84 [.545] 3.59 [.535] B 2 3 C 4.48 [.57] 2.95 [.5].84 [.33] MAX. 3.8 [.5] 2X 3X.4 [.45].89 [.35].36 [.4] B A 3.8 [.5] NOT ES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) TAC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 2/27 8
2N7582T1 IRHMS V, N-CHANNEL. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Absolute Maximum Ratings PD-96958B
PD-96958B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 2N7582T IRHMS6764 5V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS6764 K Rads (Si).9Ω 45A*
More informationTHRU-HOLE (Tabless - Low-Ohmic TO-254AA)
PD-96973A RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMB57Z6 K Rads (Si).55Ω 45A* IRHMB53Z6 3K Rads (Si).55Ω 45A*
More informationIRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D
PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*
More informationIRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings
PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
More informationIRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings
PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
More informationIRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C
PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
More informationPOWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C
PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International
More informationIRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings
PD - 94294C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ5733SE JANSR2N7485U3 3V, N-CHANNEL REF: MIL-PRF-95/74 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part
More informationIRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary
PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω
More informationIRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching
PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
More information2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3
More information2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads
More informationIRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary
PD-93754G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ573 K Rads (Si).6Ω 22A* JANSR2N748U3 IRHNJ533 3K Rads (Si).6Ω
More information2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω
More informationVGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A
PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International
More informationIRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB
PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58
More information2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9735 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) ID IRHLA77Z4 K Rads (Si).6Ω.8A IRHLA73Z4 3K Rads (Si).6Ω.8A 2N762M2
More informationIRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
PD - 90672E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262 IRHF3230 300K Rads (Si)
More informationTECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A
2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4
More information2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary
PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 2N767UC IRHLUC77Z4 6V, DUAL-N CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUC77Z4 K Rads (Si).75Ω.89A
More informationIRHLUB770Z4 SURFACE MOUNT (UB) REF: MIL-PRF-19500/744. Product Summary. Features: Absolute Maximum Ratings PD-95813H. Pre-Irradiation.
PD-9583H RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary IRHLUB770Z JANSR2N766UB 60V, N-CHANNEL REF: MIL-PRF-9500/7 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL
More informationSURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary
PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier
More informationIRHMS JANSR2N7524T1 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E
PD-9473E IRHMS59764 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) 6V, P-CHANNEL REF: MIL-PRF-95/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number
More informationSYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B
PD-9440B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG 00K Rads (Si) 6.mΩ 60nC IRHSLNA53064 300K Rads (Si) 6.mΩ 60nC IRHSLNA54064
More informationIRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features: 1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90550D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF9130-100V 0.30Ω -6.5A IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849
More informationHEXFET MOSFET TECHNOLOGY
PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM360 400V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23 HEXFET MOSFET technology is the key to International Rectifier
More informationIRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.
PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557
More informationIRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
More informationQPL Part Number JANSR2N7270 IRHM krads(si) A JANSF2N7270 IRHM krads(si) A JANSG2N7270 JANSH2N7270 TO-254
PD-90673C IRHM7450 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 500V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450
More informationIRF9230 JANTXV2N6806
PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562
More informationIRHM krads(si) A JANSR2N7269 IRHM krads(si) A JANSH2N7269 TO-254AA
PD-90674G IRHM7250 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 200V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part
More informationIRHYS9A7130CM JANSR2N7648T3
PD-97844A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) V, N-CHANNEL REF: MIL-PRF-95/775 R 9 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads (Si) 35m 3A* IRHYS9A33CM
More informationHEXFET MOSFET TECHNOLOGY
PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) ID IRFN350 0.315 Ω 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY
More informationIRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, N-CHANNEL TECHNOLOGY PD-97836
PD-97836 IRHLMS7764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS7764 krads(si).2 45A*
More informationIRHY63C30CM 300k Rads(Si) A TO-257AA
PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM
More informationIRHI7360SE. 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) PD-91446B
PD-91446B IRHI7360SE RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHI7360SE 100 krads(si) 0.20
More informationIRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, P-CHANNEL TECHNOLOGY PD-95860
PD-9586 IRHLMS79764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS79764 krads(si).8-45a*
More informationIRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY
PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE
More informationIRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
More informationIRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D
PD-93823D RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number 100 krads(si)
More informationIRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY
PD-93836C IRHNJ5723SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, N-CHANNEL REF: MIL-PRF-95/74 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ5723SE
More informationIRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary
PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2
More informationIRHNA57Z60 JANSR2N7467U2 R 5 30V, N-CHANNEL REF: MIL-PRF-19500/683 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91787J TECHNOLOGY
PD-91787J IRHNA57Z6 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57Z6 1 krads(si) 3.5m 75A* IRHNA53Z6 3 krads(si) 3.5m
More informationIRHF57234SE 100 krads(si) A TO-39
PD-9383C IRHF57234SE RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) 25V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHF57234SE krads(si).42 5.2A TO-39
More informationIRHNA9160 JANSR2N7425U
PD-91433D IRHNA9160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 100V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part
More informationI D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g
RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a
More informationIRHNA57064 JANSR2N7468U2 R 5 60V, N-CHANNEL REF: MIL-PRF-19500/673 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J TECHNOLOGY
PD-91852J IRHNA5764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA5764 1 krads(si) 5.6m 75A* IRHNA5364 3 krads(si) 5.6m
More informationIRHG V, Combination 2N-2P CHANNEL R TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) PD-94246D
PD-94246D IRHG567 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, Combination 2N-2P CHANNEL R TECHNOLOGY 5 Product Summary Part Number Radiation Level RDS(on) I D IRHG567 krads(si).29.6a IRHG563
More informationIRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A
PD-9469A IRF7MS297 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 75V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF7MS297.55 45A* Description Seventh Generation HEXFET power
More informationIRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY
PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764
More informationIRF3CMS17N80. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 800V, N-CHANNEL PD Product Summary Part Number RDS(on) I D.
PD-97842 IRF3CMS7N8 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 8V, N-CHANNEL Product Summary Part Number RDS(on) I D IRF3CMS7N8.34 5A Low-Ohmic TO-254AA Description The MOSFET uses Infineon 8V C3 CoolMOS
More informationAbsolute Maximum Ratings for Each N-Channel Device
PD-967D IRHG7 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHG7 krads(si).6.a IRHG3 3 krads(si).7.a
More informationIRHNJ63C krads(si) A SMD-0.5
PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) 3. 3.4A IRHNJ63C3
More informationIRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A
PD-9455A IRF5M495 POWER MOSFET THRU-HOLE (TO-254AA) 55V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF5M495.3-35A* TO-254AA Description Fifth Generation HEXFET power MOSFETs
More informationIRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features: 1 PD REPETITIVE AVALANCHE AND dv/dt RATED.
PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology
More informationIRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556
More informationIRHNJ597Z30 JANSR2N7519U3 R 5 30V, P-CHANNEL REF: MIL-PRF-19500/732 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94661C TECHNOLOGY
PD-9466C IRHNJ597Z3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 3V, P-CHANNEL REF: MIL-PRF-95/732 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ597Z3
More informationIRF V, N-CHANNEL
PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
More informationIRHN7150 JANSR2N7268U
PD-90720F IRHN7150 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 100V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHN7150
More information2N7622U2 IRHLNA797064
PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*
More informationIRHLNM7S7110 2N7609U8
PD-97888 IRHLNM7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.2) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMN7S7 krads(si).29 6.5A IRHLMN7S3
More informationIRFYB9130C, IRFYB9130CM
PD-97896 IRFYB9130C, IRFYB9130CM POWER MOSFET THRU-HOLE (TO-257AA Low-Ohmic Tabless) 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D Eyelets IRFYB9130C 0.30-11.2A Ceramic
More informationR 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY
PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2
More informationR 7 2N7624U3 IRHLNJ V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-97302D TECHNOLOGY.
PD-9732D 2N7624U3 IRHLNJ79734 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNJ79734 krads(si).72-22a*
More informationPart Number Radiation Level RDS(on) I D IRHLUC7970Z4 100 krads(si) A IRHLUC7930Z4 300 krads(si) A LCC-6
PD-97574A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 6V, DUAL P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).6 -.65A IRHLUC793Z4 3 krads(si).6
More informationAbsolute Maximum Ratings (Per Die)
PD-9778A IRHLG77 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG77 krads(si).285.8a IRHLG73 3 krads(si).285.8a
More informationAbsolute Maximum Ratings (Per Die)
PD-97887 IRHLG7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG7S7 krads(si).33.8a IRHLG7S3
More informationIRFY9240CM HEXFET POWER MOSFET. Absolute Maximum Ratings. Product Summary. Features. Provisional Data Sheet No. PD 9.
Provisional Data Sheet No. PD 9.1295 HEXFET POWER MOSFET IRFY9240CM P-CHNNEL -200 Volt, 0.51Ω HEXFET International Rectifier s HEXFET technology is the key to its advanced line of power MOSFET transistors.
More informationIRHM8360 N CHANNEL MEGA RAD HARD. Features: Pre-Irradiation. 1 PD A. REPETITIVE AVALANCHE AND dv/dt RATED.
PD - 90823A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 400Volt, 0.22Ω, MEGA RAD HARD HEXFET International Rectifier s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationIRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary
PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationPFU70R360G / PFD70R360G
FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationSMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25
SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationIRFF230 JANTX2N6798 JANTXV2N6798
PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
More informationN-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage
N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More information5.0V 5.0V. 20µs PULSE WIDTH Tj = 25 C. Tj = 150 C. V DS, Drain-to-Source Voltage (V) T J = 150 C 1.5. V GS, Gate-to-Source Voltage (V)
9MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET Power MOSFET Features Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
More information