n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight

Transcription

1 PD HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-.5 Features: n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight Absolute Maximum Ratings Parameter Units VGS = 4.5V, TC = 25 C Continuous Drain Current 22* VGS = 4.5V, TC = C Continuous Drain Current 22* IDM Pulsed Drain Current ➀ 88 TC = 25 C Max. Power Dissipation 5 W Linear Derating Factor.4 W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy ➁ 3 mj IAR Avalanche Current ➀ 22 A EAR Repetitive Avalanche Energy ➀ 5. mj TJ Operating Junction -55 to 5 TSTG Storage Temperature Range o C * Current is limited by package For footnotes refer to the last page Package Mounting Surface Temperature 3 (for 5 s) Weight. g A 8/3/3

2 IRL7NJ382 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 2 V VGS = V, ID = 25µA BVDSS/ TJ Temperature Coefficient of Breakdown.9 V/ C Reference to 25 C, ID =.ma Voltage RDS(on) Static Drain-to-Source On-State.85 Ω VGS = 4.5V, ID = 22A Resistance.3 VGS = 2.8V, ID = 22A ƒ VGS(th) Gate Threshold Voltage.6.9 V VDS = VGS, ID = 25µA gfs Forward Transconductance 42 S ( ) VDS = 6.V, IDS = 22A ƒ IDSS Zero Gate Voltage Drain Current VDS = 9.6V,VGS=V µa 25 VDS = 9.6V, VGS = V, TJ =25 C IGSS Gate-to-Source Leakage Forward VGS = 2V na IGSS Gate-to-Source Leakage Reverse - VGS = -2V Qg Total Gate Charge 4 VGS =4.5V, ID = 22A Qgs Gate-to-Source Charge 2 nc VDS = 6.V Qgd Gate-to-Drain ( Miller ) Charge.5 td(on) Turn-On Delay Time 5 VDD = 6.V, ID = 22A, tr Rise Time 5 VGS = 4.5V, RG = 6.Ω ns td(off) Turn-Off Delay Time 3 tf Fall Time 25 LS + LD Total Inductance 4. nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 247 VGS = V, VDS = 6.V Coss Output Capacitance 23 pf f =.MHz Crss Reverse Transfer Capacitance 5 Rg Gate Resistance.9 Ω f =.33MHz, open drain Ω Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 22* ISM Pulse Source Current (Body Diode) ➀ 88 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS = 22A, VGS = V ƒ trr Reverse Recovery Time 4 ns Tj = 25 C, IF = 22A, di/dt A/µs QRR Reverse Recovery Charge 4 nc VDD 6.V ƒ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case 2.5 C/W Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2

3 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current ( Α) I D, Drain-to-Source Current (A) IRL7NJ382 VGS TOP V 5.V 4.5V 3.V 2.5V 2.25V 2.V BOTTOM.75V VGS TOP V 5.V 4.5V 3.V 2.5V 2.25V 2.V BOTTOM.75V.75V.75V. 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 5 C T J = 25 C V DS = V 5 6µs PULSE WIDTH , Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2. I D = 22A.5..5 = 4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 I SD, Reverse Drain Current ( Α) I D, Drain-to-Source Current (A) C, Capacitance(pF) IRL7NJ = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss Coss Crss V DS, Drain-to-Source Voltage (V), Gate-to-Source Voltage (V) I = D 22A V DS = 9.6V V DS = 6V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage T J = 5 C T J = 25 C OPERATION IN THIS AREA LIMITED BY R DS (on) µs ms = V V SD, Source-to-Drain Voltage (V) ms Tc = 25 C Tj = 5 C Single Pulse. V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 IRL7NJ382 I D, Drain Current (A) LIMITED BY PACKAGE R G V DS Pulse Width µs Duty Factor. % R D D.U.T. Fig a. Switching Time Test Circuit + - V DD V DS 9% T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ). D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 IRL7NJ382 R G V DS 2V tp Fig 2a. Unclamped Inductive Test Circuit tp L D.U.T. I AS.Ω 5V V (BR)DSS DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D A 4A 22A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 5KΩ Q G 2V.2µF.3µF 4.5V Q GS Q GD D.U.T. + V - DS V G 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 IRL7NJ382 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25 C, L=.5mH Peak IAS = 22A, RG= 25Ω ƒ Pulse width 3 µs; Duty Cycle 2% Case Outline and Dimensions SMD-.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 8/3 7