VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A
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1 PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International Rectifier s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. 2N765U6 IRHLQ V, Quad N-CHANNEL LCC-28 Features: n 5V CMOS and TTL Compatible n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight TECHNOLOGY Absolute Maximum Ratings (Per Die) Parameter Units VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A VGS = 4.5V, TC = C Continuous Drain Current.6 IDM Pulsed Drain Current À.4 TC = 25 C Max. Power Dissipation 2 W Linear Derating Factor. W/ C VGS Gate-to-Source Voltage ± V EAS Single Pulse Avalanche Energy Á 38.5 mj IAR Avalanche Current À 2.6 A EAR Repetitive Avalanche Energy À.2 mj dv/dt Peak Diode Recovery dv/dt  5.56 V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 3 (for 5s) C Weight.89 (Typical) g For footnotes refer to the last page 2/3/
2 IRHLQ7724, 2N765U6 Electrical Tj = 25 C (Per Die) (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 25 V VGS = V, ID = 25µA BVDSS/ TJ Temperature Coefficient of Breakdown.25 V/ C Reference to 25 C, ID =.ma Voltage RDS(on) Static Drain-to-Source On-State. Ω Resistance VGS = 4.5V, ID =.6A Ã VGS(th) Gate Threshold Voltage. 2. V VDS = VGS, ID = 25µA VGS(th)/ TJ Gate Threshold Voltage Coefficient -5.3 mv/ C gfs Forward Transconductance S VDS = 5V, IDS =.6A Ã IDSS Zero Gate Voltage Drain Current. VDS= 2V,VGS= V µa VDS = 2V, VGS = V, TJ =25 C IGSS Gate-to-Source Leakage Forward VGS = V na IGSS Gate-to-Source Leakage Reverse - VGS = -V Qg Total Gate Charge 8 VGS = 4.5V, ID = 2.6A Qgs Gate-to-Source Charge 5. nc VDS = 25V Qgd Gate-to-Drain ( Miller ) Charge 2 td(on) Turn-On Delay Time 27 VDD = 25V, ID = 2.6A, tr Rise Time 57 ns VGS = 5.V, RG = 7.5Ω td(off) Turn-Off Delay Time 45 tf Fall Time 55 LS + LD Total Inductance 6. nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 65 VGS = V, VDS = 25V Coss Output Capacitance 62 pf f =.MHz Crss Reverse Transfer Capacitance.7 Rg Gate Resistance 8. f =.MHz, open drain Ω Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 2.6 ISM Pulse Source Current (Body Diode) À.4 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS = 2.6A, VGS = V Ã trr Reverse Recovery Time 37 ns Tj = 25 C, IF = 2.6A, di/dt A/µs QRR Reverse Recovery Charge 858 nc VDD 25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions RthJ-PCB Junction-to-PCB.4 C/W RthJA Junction-to-Ambient 9 Typical socket mount Note: Corresponding Spice and Saber models are available International Rectifier Website. For footnotes refer to the last page 2
3 Radiation Characteristics IRHLQ7724, 2N765U6 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Tj = 25 C, Post Total Dose Irradiation ÄÅ (Per Die) Parameter Up to 3K Rads (Si) Units Test Conditions Min Max BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = V, I D = 25µA VGS(th) Gate Threshold Voltage. 2. VGS = V DS, I D = 25µA I GSS Gate-to-Source Leakage Forward na V GS = V I GSS Gate-to-Source Leakage Reverse - V GS = -V I DSS Zero Gate Voltage Drain Current µa V DS = 2V, V GS =V R DS(on) Static Drain-to-Source On-State Resistance (TO-3).85 Ω VGS = 4.5V, I D =.6A R DS(on) Static Drain-to-Source On-state Resistance (LCC-28). Ω VGS = 4.5V, I D =.6A V SD Diode Forward Voltage.2 V VGS = V, I D = 2.6A. Part numbers IRHLQ7724, IRHLQ7324 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) V -2V -4V -5V -6V -7V 38 ± 5% 3 ± 7.5% 38 ± 7.5% ± 5% 355 ± 7.5% 33 ± 7.5% ± 5% 38 ± 7.5% 29 ± 7.5% Bias VDS (Volts) Bias VGS (Volts) -6-7 LET=38 ± 5% LET=62 ± 5% LET=85 ± 5% For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area 3
4 R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRHLQ7724, 2N765U6 VGS TOP V 5.V 4.5V 3.25V 2.75V V 2.25V BOTTOM 2.V VGS TOP V 5.V 4.5V 3.25V 2.75V V 2.25V BOTTOM 2.V 2.V 2.V 6µs PULSE WIDTH T j = 25 C.. V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 5 C.. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 2.6A I D, Drain-to-Source Current (A).. T J = 5 C T J = 25 C V DS = 5V 6µs PULSE 5 WIDTH V GS, Gate-to-Source Voltage (V) V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4
5 V (BR)DSS, Drain-to-Source Breakdown Voltage (V) V GS(th) Gate threshold Voltage (V) R DS (on), Drain-to -Source On Resistance ( Ω) IRHLQ7724, 2N765U6 R DS(on), Drain-to -Source On Resistance (Ω) I D = 2.6A T J = 5 C 2 T J = 5 C.5.5 T J = 25 C.5 T J = 25 C Vgs = 4.5V V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 32 I D =.ma I D = 5µA I D = 25µA I D =.ma I D = 5mA T J, Temperature ( C ) T J, Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature 5
6 I D, Drain Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRHLQ7724, 2N765U6 2 V GS = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 I D = 2.6A V DS = 2V V DS = 25V V DS = 5V 8 C iss C oss 4 2 C rss 2 FOR TEST CIRCUIT SEE FIGURE V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig. Typical Gate Charge Vs. Gate-to-Source Voltage 3 I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V V SD, Source-to-Drain Voltage (V) T C, Case Temperature ( C) Fig. Typical Source-to-Drain Diode Forward Voltage Fig 2. Maximum Drain Current Vs. Case Temperature 6
7 I D, Drain-to-Source Current (A) E AS, Single Pulse Avalanche Energy (mj) IRHLQ7724, 2N765U6 OPERATION IN THIS AREA LIMITED BY R DS (on) 8 I D TOP.2A.6A BOTTOM 2.6A µs 6 ms 4.. Tc = 25 C Tj = 5 C Single Pulse ms DC V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating Area Fig 4. Maximum Avalanche Energy Vs. Drain Current D =.5 Thermal Response ( Z thj-pcb ) SINGLE PULSE ( THERMAL RESPONSE ) E t, Rectangular Pulse Duration (sec) P DM t t 2 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-PCB 7
8 IRHLQ7724, 2N765U6 V (BR)DSS 5V tp V DS L DRIVER R G 2V V GS tp. D.U.T I AS.Ω + - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 4.5V Q G 2V.2µF 5KΩ.3µF Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge Fig 7a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 7b. Gate Charge Test Circuit V GS V DS R D V DS 9% R G D.U.T. + - V DD V GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 8
9 IRHLQ7724, 2N765U6 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 5V, starting TJ = 25 C, L=.4mH Peak IL = 2.6A, VGS = V Â ISD 2.6A, di/dt 399A/µs, VDD 25V, TJ 5 C Ã Pulse width 3 µs; Duty Cycle 2% Ä Total Dose Irradiation with VGS Bias. volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Å Total Dose Irradiation with VDS Bias. 2 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. Case Outline and Dimensions LCC-28 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) TAC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 2/2 9
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PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE
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PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2
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PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764
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PD-93836C IRHNJ5723SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, N-CHANNEL REF: MIL-PRF-95/74 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ5723SE
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PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology
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PD-9586 IRHLMS79764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS79764 krads(si).8-45a*
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PD-91787J IRHNA57Z6 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57Z6 1 krads(si) 3.5m 75A* IRHNA53Z6 3 krads(si) 3.5m
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PD-9383C IRHF57234SE RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) 25V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHF57234SE krads(si).42 5.2A TO-39
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PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
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PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM
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PD-967D IRHG7 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHG7 krads(si).6.a IRHG3 3 krads(si).7.a
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PD-91852J IRHNA5764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA5764 1 krads(si) 5.6m 75A* IRHNA5364 3 krads(si) 5.6m
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PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556
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PD-94246D IRHG567 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, Combination 2N-2P CHANNEL R TECHNOLOGY 5 Product Summary Part Number Radiation Level RDS(on) I D IRHG567 krads(si).29.6a IRHG563
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PD-91433D IRHNA9160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 100V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part
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PD-9466C IRHNJ597Z3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 3V, P-CHANNEL REF: MIL-PRF-95/732 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ597Z3
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PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM360 400V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23 HEXFET MOSFET technology is the key to International Rectifier
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RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a
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PD-9473E IRHMS59764 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) 6V, P-CHANNEL REF: MIL-PRF-95/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number
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PD-90720F IRHN7150 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 100V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHN7150
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PD-91446B IRHI7360SE RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHI7360SE 100 krads(si) 0.20
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
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PD-90673C IRHM7450 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 500V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450
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PD-90674G IRHM7250 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 200V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part
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Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
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PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
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PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
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PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
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PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
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DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
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Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power
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