IRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary

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1 PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2 75A* IRHNS546 5 krads(si).2 75A* IRHNS586 krads(si).3 75A* SupIR-SMD Description IRHNS576 is part of the International Rectifier HiRel family of products. IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 8 (MeV/(mg/cm 2 ). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Fast Switching Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Package Light Weight Surface Mount ESD Rating: Class 3B per MIL-STD-75, Method 2 Absolute Maximum Ratings Parameter Units I V GS = 2V, T C = 25 C Continuous Drain Current 75* I V GS = 2V, T C = C Continuous Drain Current 69 A I DM Pulsed Drain Current 3 P C = 25 C Maximum Power Dissipation 25 W Linear Derating Factor 2. W/ C V GS Gate-to-Source Voltage ±2 V E AS Single Pulse Avalanche Energy 363 mj I AR Avalanche Current 75 A E AR Repetitive Avalanche Energy 25 mj dv/dt Peak Diode Recovery dv/dt 6. V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Lead Temperature 3 (for 5s) Weight 3.3 (Typical) g * Current is limited by package For Footnotes, refer to the page 2. International Rectifier HiRel Products, Inc.

2 IRHNS576 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage V V GS = V, I D =.ma BV DSS / T J Breakdown Voltage Temp. Coefficient.5 V/ C Reference to 25 C, I D =.ma R DS(on) Static Drain-to-Source On- Resistance.2 V GS = 2V, I D = 69A V GS(th) Gate Threshold Voltage V V DS = V GS, I D =.ma gfs Forward Transconductance 42 S V DS = 5V, I D = 69A I DSS V DS = 8V, V GS = V Zero Gate Voltage Drain Current µa 25 V DS = 8V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward V GS = 2V na Gate-to-Source Leakage Reverse - V GS = -2V Q G Total Gate Charge 6 I D = 45A Q GS Gate-to-Source Charge 55 nc V DS = 5V Q GD Gate-to-Drain ( Miller ) Charge 65 V GS = 2V t d(on) Turn-On Delay Time 35 V DD = 5V t r Rise Time 25 I D = 45A ns t d(off) Turn-Off Delay Time 75 R G = 2.35 t f Fall Time 5 V GS = 2V Ls +L D Total Inductance 2 nh Measured from center of Drain pad to center of Source pad C iss Input Capacitance 644 V GS = V C oss Output Capacitance 66 pf V DS = 25V C rss Reverse Transfer Capacitance 6 ƒ =.MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) 75* I SM Pulsed Source Current (Body Diode) 3 A V SD Diode Forward Voltage.2 V T J =25 C, I S = 75A, V GS =V t rr Reverse Recovery Time 3 ns T J =25 C, I F = 45A,V DD 25V Q rr Reverse Recovery Charge 2.2 µc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) * Current is limited by package Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case.5 C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = 5V, starting T J = 25 C, L =.3mH, Peak I L = 75A, V GS = 2V I SD 75A, di/dt 34A/µs, V DD V, T J 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with V GS Bias: 2 volt V GS applied and V DS = during irradiation per MIL-STD-75, Method 9, condition A. Total Dose Irradiation with V DS Bias: 8 volt V DS applied and V GS = during irradiation per MlL-STD-75, Method 9, condition A. 2 International Rectifier HiRel Products, Inc.

3 Radiation Characteristics IRHNS576 IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Tj = 25 C, Post Total Dose Irradiation Parameter Up to 5 krads (Si) krads (Si) 2 Units Test Conditions Min. Max. Min. Max. BV DSS Drain-to-Source Breakdown Voltage V V GS = V, I D =.ma V GS(th) Gate Threshold Voltage V V DS = V GS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - - na V GS = -2V I DSS Zero Gate Voltage Drain Current 25 µa V DS = 8V, V GS = V R DS(on) R DS(on) Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SupIR-SMD). Part numbers IRHNS576, IRHNS536 and IRHNS Part number IRHNS586 IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area.3.4 m V GS = 2V, I D = 45A.2.3 m V GS = 2V, I D = 45A V SD Diode Forward Voltage.2.2 V V GS = V, I D = 45A LET Energy Range VDS (V) (MeV/(mg/cm 2 )) @VGS=-2V 38 ± 5% 3 ± 7.5% 38 ± 7.5% 6 ± 5% 33 ± 7.5% 3 ± % ± 5% 35 ± % 28 ± 7.5% Bias VDS (V) LET=38 ± 5% LET=6 ± 5% LET=84 ± 5% Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc.

4 IRHNS576 I D, Drain-to-Source Current (A) TOP BOTTOM VGS 5V 2V V 9.V 8.V 7.V 6.V 5.V 5.V I D, Drain-to-Source Current (A) TOP BOTTOM VGS 5V 2V V 9.V 8.V 7.V 6.V 5.V 5.V 2µs PULSE WIDTH T J = 25 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 2µs PULSE WIDTH T J = 5 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) T J = 5 C T J = 25 C V DS = 5V 2µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2. I D = 75A.5..5 V GS = 2V T J, Junction Temperature ( C) C, Capacitance (pf) Fig 3. Typical Transfer Characteristics VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C oss C rss C iss V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 4. Normalized On-Resistance Vs. Temperature V GS, Gate-to-Source Voltage (V) I = D 75A V DS = 8V V DS = 5V V DS = 2V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 4 International Rectifier HiRel Products, Inc.

5 I D, Drain-to-Source Current (A) IRHNS576 OPERATION IN THIS AREA LIMITED BY RDS(on) I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V V SD,Source-to-Drain Voltage (V). Tc = 25 C Tj = 5 C Single Pulse s ms ms DC V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage I D, Drain Current (A) LIMITED BY PACKAGE T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature E AS, Single Pulse Avalanche Energy (mj) Fig 8. Maximum Safe Operating Area TOP BOTTOM I D 34A 47A 75A Starting T, Junction Temperature ( J C) Fig. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thjc ).. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 International Rectifier HiRel Products, Inc. PDM t t2

6 IRHNS576 5V tp V (BR)DSS V DS L DRIVER R G 2V tp D.U.T I AS. + - V DD A I AS Fig 2a. Unclamped Inductive Test Circuit Fig 2b. Unclamped Inductive Waveforms Fig 3a. Gate Charge Waveform Fig 3b. Gate Charge Test Circuit Fig 4a. Switching Time Test Circuit Fig 4b. Switching Time Waveforms 6 International Rectifier HiRel Products, Inc.

7 IRHNS576 Case Outline and Dimensions SupIR-SMD p N. Sepulveda Boulevard, El Segundo, California 9245, USA Tel: + (3) Junction Avenue, San Jose, California 9534, USA Tel: + (48) Crawford Street, Leominster, Massachusetts 453, USA Tel: + (978) Data and specifications subject to change without notice. 7 International Rectifier HiRel Products, Inc.

8 IRHNS576 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s product and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer s technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to ( WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 8 International Rectifier HiRel Products, Inc.

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