IRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A

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1 PD-9455A IRF5M495 POWER MOSFET THRU-HOLE (TO-254AA) 55V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF5M A* TO-254AA Description Fifth Generation HEXFET power MOSFETs from IR HiRel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Features Low R DS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter I V GS = -V, T C = 25 C Continuous Drain Current -35* I V GS = -V, T C = C Continuous Drain Current -35* I DM Pulsed Drain Current -4 P C = 25 C Maximum Power Dissipation 25 W Units Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy 49 mj I AR Avalanche Current -35 A E AR Repetitive Avalanche Energy 2.5 mj dv/dt Peak Diode Recovery dv/dt -2.2 V/ns T J Operating Junction and -55 to + 5 T STG * Current is limited by package For Footnotes refer to the page 2. Storage Temperature Range Lead Temperature 3 (.63 in. /.6 mm from case for s) Weight 9.3 (Typical) g A C

2 Electrical T j = 25 C (Unless Otherwise Specified) IRF5M495 Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage -55 V V GS = V, I D = -25µA BV DSS / T J Breakdown Voltage Temp. Coefficient -.53 V/ C Reference to 25 C, I D = -.ma R DS(on) Static Drain-to-Source On-State Resistance.3 V GS = -V, I D = -35A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -25µA Gfs Forward Transconductance 8 S V DS = -25V, I D = -35A I DSS -25 V DS = -55V, V GS = V Zero Gate Voltage Drain Current µa -25 V DS = -44V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward - V GS = -2V na Gate-to-Source Leakage Reverse V GS = 2V Q G Total Gate Charge 95 I D = -35A Q GS Gate-to-Source Charge 45 nc V DS = -44V Q GD Gate-to-Drain ( Miller ) Charge 75 V GS = -V t d(on) Turn-On Delay Time 35 V DD = -28V tr Rise Time 65 I D = -35A ns t d(off) Turn-Off Delay Time 95 R G = 2.5 t f Fall Time 3 V GS = -V Ls +L D Total Inductance 6.8 nh Measured from Drain lead (6mm /.25 in from package) to Source lead (6mm/.25 in from package) with Source wire internally bonded from Source pin to Drain pad C iss Input Capacitance 357 V GS = V C oss Output Capacitance 3 pf V DS = -25V C rss Reverse Transfer Capacitance 55 ƒ =.MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) -35* I SM Pulsed Source Current (Body Diode) -4 A V SD Diode Forward Voltage -.6 V T J = 25 C,I S = -35A, V GS = V t rr Reverse Recovery Time 2 ns T J = 25 C, I F = -35A, V DD - 3V Q rr Reverse Recovery Charge 365 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) * Current is limited by package Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case. R CS Case -to-sink.2 C/W R JA Junction-to-Ambient (Typical socket mount) 48 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = -25V, starting T J = 25 C, L =.8mH, Peak I L = -35A, V GS = -V,R G = 25 I SD -35A, di/dt -23A/µs, V DD -55V, T J 5 C Pulse width 3 µs; Duty Cycle 2%

3 -I D, Drain-to-Source Current (A) VGS TOP -5V -V -8.V -7.V -6.V -5.5V -5.V BOTTOM -4.5V -4.5V 2µs PULSE WIDTH T J = 25 C. -V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) VGS TOP -5V -V -8.V -7.V -6.V -5.5V -5.V BOTTOM -4.5V -4.5V 2µs PULSE WIDTH T J = 5 C. -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) T J= 25 C T J= 5 C V DS= -25V 2µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2. I D = -35A.5..5 V GS = -V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature C, Capacitance (pf) 7 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED 6 Crss = Cgd Coss = Cds + Cgd 5 C iss 4 3 C oss 2 C rss -V DS, Drain-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = D -35A V DS=-44V V DS=-28V V DS=-V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

4 -I D, Drain-to-Source Current (A) IRF5M495 I SD, Reverse Drain Current (A) T J= 5 C T J= 25 C V GS = V V SD,Source-to-Drain Voltage (V) Tc = 25 C Tj = 5 C Single Pulse OPERATION IN THIS AREA LIMITED BY R DS (on) -V DS, Drain-toSource Voltage (V) ms ms Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area -I D, Drain Current (A) LIMITED BY PACKAGE T C, Case Temperature ( C) E AS, Single Pulse Avalanche Energy (mj) I D TOP -5.7A -22A BOTTOM -35A Starting T, Junction Temperature ( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thjc ) D =.5.2 PDM...5 t t2.2. SINGLE PULSE Notes: (THERMAL RESPONSE). Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case

5 Fig 2a. Unclamped Inductive Test Circuit Fig 2b. Unclamped Inductive Waveforms Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit Fig 4a. Switching Time Test Circuit Fig 4b. Switching Time Waveforms

6 Case Outline and Dimensions TO-254AA 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] 6.6 [.26] 6.32 [.249].2 [.5].27 [.5].2 [.4] 7.4 [.685] 6.89 [.665] 2.32 [.8] 2.7 [.79] 3.84 [.545] 3.59 [.535] B 2 3 C 4.48 [.57] 2.95 [.5].84 [.33] MAX. 3.8 [.5] 2X 3X.4 [.45].89 [.35].36 [.4] B A 3.8 [.5] NOTES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS = DRAIN 2 = SOURCE 3 = GATE BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR HiRel Headquarters: N. Sepulveda Blvd., El Segundo, California 9245, USA Tel: (3) IR HiRel Leominster: 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) IR HiRel San Jose: 252 Junction Avenue, San Jose, California 9534, USA Tel: (48) Data and specifications subject to change without notice

7 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s product and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer s technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to ( WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office

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