IRHNJ63C krads(si) A SMD-0.5

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1 PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) A IRHNJ63C3 3 krads(si) A SMD-.5 Description IR HiRel R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 9MeV/(mg/cm 2 ). Their combination of very low R DS(on) and faster switching times reduces power loss and increases power density in today s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Features Low R DS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight ESD Rating: Class 2 per MIL-STD-75, Method 2 Absolute Maximum Ratings Parameter Units I V GS = 2V, T C = 25 C Continuous Drain Current 3.4 I V GS = 2V, T C = C Continuous Drain Current 2.2 A I DM Pulsed Drain Current 3.6 P C = 25 C Maximum Power Dissipation 75 W Linear Derating Factor.6 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy 76 mj I AR Avalanche Current 3.4 A E AR Repetitive Avalanche Energy 7.5 mj dv/dt Peak Diode Recovery dv/dt 9.2 V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range Pckg. Mounting Surface Temp. 3 (for 5s) C Weight. (Typical) g For Footnotes refer to the page

2 Electrical Tj = 25 C (Unless Otherwise Specified) IRHNJ67C3, 2N7598U3 Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D =.ma BV DSS / T J Breakdown Voltage Temp. Coefficient.47 V/ C Reference to 25 C, I D =.ma Static Drain-to-Source On-State R DS(on) 3. V GS = 2V, I D = 2.2A Resistance V GS(th) Gate Threshold Voltage V V DS = V GS, I D =.ma Gfs Forward Transconductance 3.4 S V DS = 5V, I D = 2.2A I DSS Zero Gate Voltage Drain Current V DS = 48V, V GS = V µa 25 V DS = 48V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward V GS = 2V na Gate-to-Source Leakage Reverse - V GS = -2V Q G Total Gate Charge 52 I D = 3.4A Q GS Gate-to-Source Charge 4 nc V DS = 3V Q GD Gate-to-Drain ( Miller ) Charge 7 V GS = 2V t d(on) Turn-On Delay Time 25 V DD = 3V tr Rise Time 7 I D = 3.4A ns t d(off) Turn-Off Delay Time 44 R G = 7.5 t f Fall Time 7 V GS = 2V Ls +L D Total Inductance 4. nh Measured from the center of drain pad to center of source pad C iss Input Capacitance 222 V GS = V C oss Output Capacitance 8 pf V DS = 25V C rss Reverse Transfer Capacitance.9 ƒ =.MHz R G Gate Resistance.5 ƒ =.MHz,open drain Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) 3.4 I SM Pulsed Source Current (Body Diode) 3.6 A V SD Diode Forward Voltage.2 V T J = 25 C,I S = 3.4A, V GS = V t rr Reverse Recovery Time 74 ns T J = 25 C, I F = 3.4A, V DD 5V Q rr Reverse Recovery Charge 2. µc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case.67 C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = 5V, starting T J = 25 C, L = 3mH, Peak I L = 3.4A, V GS = 2V I SD 3.4A, di/dt 628A/µs, V DD 6V, T J 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with V GS Bias. 2 volt V GS applied and V DS = during irradiation per MIL-STD-75, Method 9, condition A. Total Dose Irradiation with V DS Bias. 48 volt V DS applied and V GS = during irradiation per MlL-STD-75, Method 9, condition A

3 Table. Electrical Tj = 25 C, Post Total Dose Irradiation Parameter IRHNJ67C3, 2N7598U3 Radiation Characteristics IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Up to 3 krads (Si) Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D =.ma V GS(th) Gate Threshold Voltage V V DS = V GS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - na V GS = -2V I DSS Zero Gate Voltage Drain Current µa V DS = 48V, V GS = V R DS(on) R DS(on) Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-.5) Min. Max. 3. V GS = 2V, I D = 2.2A 3. V GS = 2V, I D = 2.2A V SD Diode Forward Voltage.2 V V GS = V, I D = 3.4A Part numbers IRHNJ67C3 and IRHNJ63C3 IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm 2 )) Energy (MeV) Range (µm) V Kr Xe Au VDS Kr Xe Au VGS For Footnotes, refer to the page 2. Fig a. Typical Single Event Effect, Safe Operating Area

4 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRHNJ67C3, 2N7598U3 VGS TOP 5V 2V V 8.V 6.V 5.5V 5.5V BOTTOM 4.5V 2µs PULSE WIDTH, Tj = 25 C VGS TOP 5V 2V V 8.V 6.V 5.5V 5.5V BOTTOM 4.5V 4.5V 4.5V.. V DS, Drain-to-Source Voltage (V) 2µs PULSE WIDTH, Tj = 5 C.. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 I D = 3.4A 2..5 T J = 5 C T J = 25 C.. V DS = 5V 2 s PULSE WIDTH V GS, Gate-to-Source Voltage (V).5 V GS = 2V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 2 6 V GS = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 6 I D = 3.4A V DS = 48V V DS = 3V V DS = 2V 2 C iss C C rss oss 4 FOR TEST CIRCUIT SEE FIGURE V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

5 I SD, Reverse Drain Current (A) I D, Drain Current (A) I D, Drain-to-Source Current (A) IRHNJ67C3, 2N7598U3 OPERATION IN THIS AREA LIMITED BY R DS (on) s T J = 5 C T J = 25 C ms. V GS = V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage.. Tc = 25 C Tj = 5 C Single Pulse DC ms V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Fig a. Switching Time Test Circuit T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms. D = SINGLE PULSE ( THERMAL RESPONSE ).2. Thermal Response ( Z thjc ). E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6 E AS, Single Pulse Avalanche Energy (mj) IRHNJ67C3, 2N7598U3 6 2 I D TOP.5A 2.2A BOTTOM 3.4A 8 4 Fig 2a. Unclamped Inductive Test Circuit Starting T J, Junction Temperature ( C) tp V (BR)DSS Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit

7 IRHNJ67C3, 2N7598U3 Case Outline and Dimensions SMD-.5 IR HiRel Headquarters: N. Sepulveda Blvd., El Segundo, California 9245, USA Tel: (3) IR HiRel Leominster: 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) IR HiRel San Jose: 252 Junction Avenue, San Jose, California 9534, USA Tel: (48) Data and specifications subject to change without notice

8 IRHNJ67C3, 2N7598U3 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s product and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer s technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to ( WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office

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