SMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e

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1 l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 IRFR3704PbF IRFU3704PbF HEXFET Power MOSFET V DSS R DS(on) max I D 20V 9.5mΩ 75A D-Pak IRFR3704 PD A I-Pak IRFU3704 Absolute Maximum Ratings Symbol Parameter Max Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ± 20 I T C = 25 C Continuous Drain Current, V V 75 f I T C = 70 C Continuous Drain Current, V V 63 f A I DM Pulsed Drain Current c 300 P C = 25 C Maximum Power Dissipation e 90 W P A = 70 C Maximum Power Dissipation e 62 Linear Derating Factor 0.58 W/ C T J, T STG Junction and Storage Temperature Range -55 to +175 C Thermal Resistance Symbol Parameter Typ Max Units R θjc Junction-to-Case g 1.7 R θja Junction-to-Ambient (PCB Mount) *g 50 C/W R θja Junction-to-Ambient g 1 Notes through are on page /13/04

2 IRFR/U3704PbF T J = 25 C (unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 20 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V I DSS Drain-to-Source Leakage Current µa 0 Gate-to-Source Forward Leakage 200 I GSS na Gate-to-Source Reverse Leakage -200 T J = 25 C (unless otherwise specified) Symbol Parameter Min Typ Max Units g fs Forward Transconductance 42 S Q g Total Gate Charge 19 I D = 28.4A Q gs Gate-to-Source Charge 8.1 nc V DS = V Q gd Gate-to-Drain ("Miller") Charge 6.4 V GS = 4.5V e Q OSS Output Gate Charge V GS = 0V, V DS = V R G Gate Resistance Ω t d(on) Turn-On Delay Time 8.4 V DD = V t r Rise Time 98 I D = 28.4A t d(off) Turn-Off Delay Time 12 ns R G = 1.8Ω t f Fall Time 5.0 V GS = 4.5V e C iss Input Capacitance 1996 V GS = 0V C oss Output Capacitance 85 pf V DS = V C rss Reverse Transfer Capacitance 155 ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ Max Units E AS Single Pulse Avalanche Energyd 216 mj I AR Avalanche Currentc 71 A Diode Characteristics Symbol Parameter Min Typ Max Units I S Continuous Source Current 75 f I SM (Body Diode) A Pulsed Source Current 300 (Body Diode)c V SD Diode Forward Voltage 0.82 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc V GS = V, I D = 15A e V GS = 4.5V, I D = 12A e V DS = V GS, I D = 250µA V DS = 20V, V GS = 0V V DS = 16V, V GS = 0V, T J = 125 C V GS = 16V V GS = -16V Conditions V DS = 25V, I D = 57A Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 35.5A, V GS = 0V e T J = 125 C, I S = 35.5A, V GS = 0V e T J = 25 C, I F = 35.5A, V R = 20V di/dt = 0A/µs e T J = 125 C, I F = 35.5A, V R = 20V di/dt = 0A/µs e 2

3 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFR/U3704PbF 00 0 VGS TOP.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 00 0 VGS TOP.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 3.5V 3.5V 20µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 1 20µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 175 C V DS= 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D = 75A V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 IRFR/U3704PbF C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I = D 28.4A V DS = V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T J = 175 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms ms TC = 25 C TJ = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 IRFR/U3704PbF 80 LIMITED BY PACKAGE V GS V DS R D D.U.T. I D, Drain Current (A) Fig a. Switching Time Test Circuit V DS R G V Pulse Width 1 µs Duty Factor 0.1 % + - V DD 90% T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R DS ( on ), Drain-to-Source On Resistance ( Ω ) R DS(on), Drain-to -Source On Resistance ( Ω) IRFR/U3704PbF VGS = 4.5V VGS = V I D = 35.5A I D, Drain Current ( A ) V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 12V I AS V GS.2µF 50KΩ 3mA tp.3µf I G D.U.T. I D Current Sampling Resistors V(BR)DSS + V - DS V GS R G V DS 20V V G tp Q GS L D.U.T I AS 0.01Ω Q G Q GD Charge Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms 15V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) I D TOP 11.6A 23.8A BOTTOM 28.4A Starting T, Junction Temperature ( J C) Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6

7 IRFR/U3704PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU A PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SITE CODE 7

8 IRFR/U3704PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE IRFU A PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNATIONAL RECTIFIER LOGO AS S E MBL Y LOT CODE IRFU PART NUMBER DATE CODE P = DES IGNAT E S LE AD-FR EE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = ASSEMBLY SITE CODE 8

9 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) IRFR/U3704PbF TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.5 mh R G = 25Ω, I AS = 28.4 A. NOTES : 1. OUTLINE CONFORMS TO EIA mm ƒ Pulse width 300µs; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A R θ is measured at T J approximately 90 C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 12/04 9

10 Note: For the most current drawings please refer to the IR website at: