HEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.

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1 l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<.mm) l Available in Tape and Reel l Fast Switching l.8v Gate Rated l Lead-Free l Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<.mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Absolute Maximum Ratings Thermal Resistance IRLML640GPbF HEXFET Power MOSFET V DSS = -2V R DS(on) = 0.05Ω Parameter Max. Units V DS Drain- Source Voltage -2 V I T A = 25 C Continuous Drain Current, V -4.5V -4.3 I T A = 70 C Continuous Drain Current, V -4.5V -3.4 A I DM Pulsed Drain Current -34 P A = 25 C Power Dissipation.3 P A = 70 C Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C E AS Single Pulse Avalanche Energy 33 mj V GS Gate-to-Source Voltage ± 8.0 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Parameter Typ. Max. Units R θja Maximum Junction-to-Ambientƒ 75 0 C/W * 6 ' Micro3 PD /22/08

2 IRLML640GPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -2 V V GS = 0V, I D = -250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = -ma V GS = -4.5V, I D = -4.3A Ω R DS(on) Static Drain-to-Source On-Resistance V GS = -2.5V, I D = -2.5A 25 V GS = -.8V, I D = -2.0A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250µA g fs Forward Transconductance 8.6 S V DS = -V, I D = -4.3A I DSS Drain-to-Source Leakage Current -.0 V DS = -2V, V GS = 0V µa -25 V DS = -9.6V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage -0 V GS = -8.0V na Gate-to-Source Reverse Leakage 0 V GS = 8.0V Q g Total Gate Charge 5 I D = -4.3A Q gs Gate-to-Source Charge.4 2. nc V DS = -V Q gd Gate-to-Drain ("Miller") Charge V GS = -5.0V t d(on) Turn-On Delay Time V DD = -6.0V ns t r Rise Time 32 I D = -.0A t d(off) Turn-Off Delay Time 250 R D = 6.0Ω t f Fall Time 2 R G = 89Ω C iss Input Capacitance 830 V GS = 0V C oss Output Capacitance 80 pf V DS = -V C rss Reverse Transfer Capacitance 25 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol -.3 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -34 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -.3A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -.3A Q rr Reverse RecoveryCharge nc di/dt = -0A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300µs; duty cycle 2%. ƒ Surface mounted on " square single layer oz. copper FR4 board, steady state. Starting T J = 25 C, L = 3.5mH R G = 25Ω, I AS = -4.3A. 2

3 -I D, Drain-to-Source Current (Α) -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) IRLML640GPbF 0 VGS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -.8V -.5V BOTTOM -.0V 0 VGS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -.8V -.5V BOTTOM -.0V -.0V -.0V µs PULSE WIDTH Tj = 25 C 0 -V DS, Drain-to-Source Voltage (V) µs PULSE WIDTH Tj = 50 C 0 -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0.0 T J = 25 C T.0 J = 50 C.0 V DS = -2V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = -4.3A V GS = -4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance(pF) IRLML640GPbF Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd -V GS, Gate-to-Source Voltage (V) I D = -4.3A V DS =-V 0 0 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J= 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TC = 25 C TJ = 50 C Single Pulse 0 -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4

5 IRLML640GPbF -I D, Drain Current (A) T C, Case Temperature ( C) E AS, Single Pulse Avalanche Energy (mj) I D TOP -.9A -3.4A BOTTOM -4.3A Starting T, Junction Temperature ( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Maximum Avalanche Energy Vs. Drain Current 00 Thermal Response (Z thja ) 0 D = PDM t SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 -V GS(th) Gate threshold Voltage (V) R DS(on), Drain-to -Source Voltage ( Ω ) R DS ( on ), Drain-to-Source On Resistance ( Ω ) IRLML640GPbF VGS = -.8V VGS = -2.5V Id = -4.3A VGS = -4.5V V GS, Gate -to -Source Voltage ( V ) I D, Drain Current ( A ) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current I D = -250µA T J, Temperature ( C ) Fig 4. Typical Threshold Voltage Vs. Junction Temperature 6

7 IRLML640GPbF Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) A 5 A A2 6 B E e 3 6 D 2 3X e b 0.20 [0.008] 0. [0.004] C M C C B A A 5 E 5 [0.006] M C B A H 4 L 3X L 7 L2 c DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A A A b c D E E e 0.95 BSC %6& e.90 BSC %6& L L 0.54 REF REF L BSC BSC Recommended Footprint NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.0 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23 / TO-236AB) Part Marking Information Micro3 / SOT-23 Package Marking PART NUMBER HALOGEN FREE INDICATOR A YW LC Y = YEAR W = WEEK LOT CODE PART NUMBER CODE REFERENCE: A = IRLML2402 B =IRLML2803 C = IRLML2402 D = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 Note: A line above the work week (as shown here) indicates Lead-free :,)35(&('('%</$67',*,72)&$/('$5<($5 <($5 < :25. :((. $ % & ' :,)35(&('('%<$/(77(5 :25. <($5 < :((.: $ $ % % & & ' ' ( ) * + -. ; < = : ; < = Note: For the most current drawing please refer to IR website at 7

8 IRLML640GPbF Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 07/