1 = D 2 = S 3 = S 4 = G

Transcription

1 l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<.mm) l Available in Tape & Reel PD A IRF7700 HEXFET Power MOSFET V DSS R DS(on) max I D -20V 0.05@V GS = -4.5V -8.6A 0.024@V GS = -2.5V -7.3A Description HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<.mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards = D 2 = S 3 = S 4 = G G D S 5 8 = D 7 = S 6 = S 5 = D TSSOP-8 Absolute Maximum Ratings Parameter Max. Units V DS Drain- Source Voltage -20 V I T C = 25 C Continuous Drain Current, V -4.5V ±8.6 I T C = 70 C Continuous Drain Current, V -4.5V ±6.8 A I DM Pulsed Drain Current ±68 P C = 25 C Power Dissipation.5 P C = 70 C Power Dissipation 0.96 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 83 C/W 6/9/00

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -20 V V GS = 0V, I D = -250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.0 V/ C Reference to 25 C, I D = -ma 0.05 V GS = -4.5V, I D = -8.6A R DS(on) Static Drain-to-Source On-Resistance Ω V GS = -2.5V, I D = -7.3A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250µA g fs Forward Transconductance -20 S V DS = -V, I D = -8.6A I DSS Drain-to-Source Leakage Current -.0 V DS = -6V, V GS = 0V µa -25 V DS = -6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V na Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Total Gate Charge I D = -8.6A Q gs Gate-to-Source Charge 5 nc V DS = -6V Q gd Gate-to-Drain ("Miller") Charge 9 29 V GS = -5.0V t d(on) Turn-On Delay Time 9 V DD = -V t r Rise Time 40 I D = -.0A ns t d(off) Turn-Off Delay Time 20 R G = 6.0Ω t f Fall Time 30 V GS = -4.5V C iss Input Capacitance 4300 V GS = 0V C oss Output Capacitance 880 pf V DS = -5V C rss Reverse Transfer Capacitance 580 ƒ = TBDkHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -.5 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -68 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -.5A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -.5A Q rr Reverse RecoveryCharge nc di/dt = 0A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ When mounted on inch square copper board, t< sec Pulse width 300µs; duty cycle 2%. 2

3 -I D, Drain-to-Source Current (Α) IRF7700 -I D, Drain-to-Source Current (A) 0 VGS TOP -5V -V -4.5V -3.0V -2.7V -2.5V -2.25V BOTTOM -2.0V -2.0V -I D, Drain-to-Source Current (A) 0 VGS TOP -5V -V -4.5V -3.0V -2.7V -2.5V -2.25V BOTTOM -2.0V -2.0V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 T J = 25 C T J = 50 C V DS = -5V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 4.A V GS= 4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) 2000 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd 600 Coss = Cds + Cgd C iss C oss C rss 0 0 -V DS, Drain-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = D -4.A V DS =-6V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T = 50 J C T = 25 J C V GS = 0 V V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TC = 25 C TJ = 50 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 5.0 V DS R D -I D, Drain Current (A) T C, Case Temperature ( C) R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. V DD Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % + - Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms 0 D = 0.50 Thermal Response (Z thja ) PDM 0.0 t SINGLE PULSE (THERMAL RESPONSE) t2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + TA t, Rectangular Pulse Duration (sec) Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R DS(on), Drain-to -Source On Resistance ( Ω) R DS (on), Drain-to-Source On Resistance ( Ω) IRF I D = -8.6A 0.02 V GS = -2.5V 0.04 V GS = -4.5V V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF Q GS Q GD D.U.T. + V DS - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 -V GS(th), Variace (V) Power (W) IRF I D = -250µA T J, Temperature ( C) Time (sec) Fig 4. Threshold Voltage Vs. Temperature Fig 5. Typical Power Vs. Time 7

8 TSSOP-8 Part Marking Information EXAMPLE: THIS IS AN IRF7702 LOT CODE (XX) PART NUMBER DATE CODE EXAMPLES: 9503 = 5C 9532 = EF XXYW 7702 DATE CODE (YW) WORK WEEK -26, NUMERIC YEAR CODE (,2,...ETC.) YEAR TABLE Y 2 WORK WEEK C 4 04 D W A B X Y Z TABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B,...ETC.) YEAR Y 200 A 2002 B 2003 C 994 D 995 E 996 F 997 G 998 H 999 J 2000 K WORK WE EK W A B C D X Y Z TSSOP-8 Tape and Reel 8LTSSOP (MO-53AA) 6 mm Ø 3" 6mm 8 mm FEED DIRECTION NOT ES:. TAPE & REEL OUTLINE CONFORMS TO EIA-48 & EIA

9 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, 07 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Tel: 8 (0) IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: (0) IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0) Data and specifications subject to change without notice. 6/00 9