HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω

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1 Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (<.mm) Avaiabe in Tape and Ree Fast Switching Lead-Free Haogen-Free G 3 D S 2 PD A HEXFET Power MOSFET V DSS = 20V R DS(on) = 0.045Ω Description These N-Channe MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in battery and oad management. A thermay enhanced arge pad eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCIA cards. The therma resistance and power dissipation are the best avaiabe. Micro3 Absoute Maximum Ratings Parameter Max. Units V DS Drain- Source Votage 20 V I T A = 25 C Continuous Drain Current, V 4.5V 4.2 I T A = 70 C Continuous Drain Current, V 4.5V 3.4 A I DM Pused Drain Current 33 P A = 25 C Power Dissipation.25 P A = 70 C Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ. Max. Units R θja Maximum Junction-to-Ambientƒ 75 C/W 09/25/2

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 20 V V GS = 0V, I D = 250uA ΔV (BR)DSS /ΔT J Breakdown Votage Temp. Coefficient 0.0 V/ C Reference to 25 C, I D =.0mA R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 4.5V, I D = 4.2A d V GS = 2.5V, I D = 3.6A d V GS(th) Gate Threshod Votage V ΔV GS(th) Gate Threshod Votage Coefficient -3.2 mv/ C V DS = V GS, I D = 250μA gfs Forward Transconductance 5.8 S V DS = V, I D = 4.0A I DSS Drain-to-Source Leakage Current.0 V DS = 6V, V GS = 0V μa 25 V DS = 6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage na V GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V Q g Tota Gate Charge I D = 4.0A Q gs Gate-to-Source Charge nc V DS = V Q gd Gate-to-Drain ("Mier") Charge V GS = 5.0V d t d(on) Turn-On Deay Time 7.5 V DD = V t r Rise Time I D =.0A ns t d(off) Turn-Off Deay Time 54 R G = 6Ω t f Fa Time 26 R D = Ω d C iss Input Capacitance 740 V GS = 0V C oss Output Capacitance 90 pf V DS = 5V C rss Reverse Transfer Capacitance 66 ƒ =.0MHz Source-Drain Rating and Characteristics I S I SM Parameter Min. Typ. Max. Units Continuous Source Current.3 (Body Diode) A Pused Source Current 33 (Body Diode)Ãc V SD Diode Forward Votage.2 V t rr Reverse Recovery Time 6 24 ns Q rr Reverse Recovery Charge nc Conditions MOSFET symbo showing the integra reverse p-n junction diode. T J = 25 C, I S =.3A, V GS = 0V d T J = 25 C, I F =.3A di/dt = A/μs dã G D S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Surface mounted on FR-4 board, t 5sec. Puse width 300μs; duty cyce 2%. 2

3 I D, Drain-to-Source Current (A) VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V I D, Drain-to-Source Current (A) VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V 20μs PULSE WIDTH T J = 25 C 0. V DS, Drain-to-Source Votage (V) 20μs PULSE WIDTH T J = 50 C 0. V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) T J = 25 C T J = 50 C V DS= 5V 20μs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = 4.0A V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) 200 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED C = 0 rss Cgd Coss = Cds + Cgd 800 C iss C oss C rss 0 V DS, Drain-to-Source Votage (V) V GS, Gate-to-Source Votage (V) I = D 4.0A V DS = V Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) I, Drain Current (A) D 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us us ms ms TA = 25 C TJ = 50 C Singe Puse V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 4.0 I D, Drain Current (A) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 0 Therma Response (Z thja ) D = PDM t SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA t, Rectanguar Puse Duration (sec) Fig. Maximum Effective Transient Therma Impedance, Junction-to-Ambient 5

6 V GS(th), Gate threshod Votage (V) R DS(on), Drain-to -Source Votage ( Ω ) R DS ( on ), Drain-to-Source On Resistance ( Ω ) VGS = 2.5V Id = 4.0A VGS = 4.5V V GS, Gate -to -Source Votage ( V ) i D, Drain Current ( A ) Fig. On-Resistance Vs. Gate Votage Fig 2. On-Resistance Vs. Drain Current ID = 50μA ID = 250μA T J, Temperature ( C ) Fig 3. Threshod Votage Vs. Temperature 6

7 Micro3 (SOT-23) Package Outine Dimensions are shown in miimeters (inches) 5 6 B 6 A 5 D 3 E E 0.5 [0.006] M CBA 2 e e H 4 L c A A2 C 0. [0.004] C A 3X b 0.20 [0.008] M C B A NOTES: Recommended Footprint DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A A A b c D E E e 0.95 BSC %6& e.90 BSC %6& L L 0.54 REF REF L BSC BSC L X L 7 Micro3 (SOT-23/TO-236AB) Part Marking Information Notes: This part marking information appies to devices produced after 02/26/200 DATE CODE PART NUMBER Cu WIRE HALOGEN FREE X = PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML930 R = IRLML9303 LOT CODE LEAD FREE. DIMENSIONING & TOLERANCING PER ANSI Y4.5M DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.0 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Note: For the most current drawing pease refer to IR website at: W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR W = (27-52) IF PRECEDED BY A LETTER 200 A 27 A 2002 B 28 B 2003 C 29 C 2004 D 30 D 2005 E 2006 F 2007 G 2008 H 2009 J 20 K 50 X 7 YEAR Y YEAR Y WORK WEEK W 0 A 02 B 03 C 04 D WORK WEEK X Y Z W

8 Micro3 Tape & Ree Information Dimensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing pease refer to IR website at Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N.Sepuveda bvd, E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information. 09/