l Advanced Process Technology
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- Lynette Ashlynn Cross
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1 l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. PD IRFP260MPbF HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.04Ω I D = 50A The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-28 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 50 I T C = 0 C Continuous Drain Current, V V 35 A I DM Pulsed Drain Current 200 P C = 25 C Power Dissipation 300 W Linear Derating Factor 2.0 W/ C V GS Gate-to-Source Voltage ±20 V E AS Single Pulse Avalanche Energy 560 mj I AR Avalanche Current 50 A E AR Repetitive Avalanche Energy 30 mj dv/dt Peak Diode Recovery dv/dt ƒ V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.50 R θcs Case-to-Sink, Flat, Greased Surface 0.24 C/W R θja Junction-to-Ambient /0/
2 IRFP260MPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.26 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 0.04 Ω V GS = V, I D = 28A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA g fs Forward Transconductance 27 S V DS = 50V, I D = 28A I DSS Drain-to-Source Leakage Current 25 V µa DS = 200V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V na Gate-to-Source Reverse Leakage -0 V GS = -20V Q g Total Gate Charge 234 I D = 28A Q gs Gate-to-Source Charge 38 nc V DS = 60V Q gd Gate-to-Drain ("Miller") Charge V GS = V t d(on) Turn-On Delay Time 7 V DD = 0V t r Rise Time 60 I D = 28A ns t d(off) Turn-Off Delay Time 55 R G =.8Ω t f Fall Time 48 V GS = V Between lead, L D Internal Drain Inductance 5.0 6mm (0.25in.) nh G from package L S Internal Source Inductance 3 and center of die contact C iss Input Capacitance 4057 V GS = 0V C oss Output Capacitance 603 pf V DS = 25V C rss Reverse Transfer Capacitance 6 ƒ =.0MHz D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 50 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 200 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 28A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 28A Q rr Reverse Recovery Charge µc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.5mH R G = 25Ω, I AS = 28A. ƒ I SD 28A, di/dt 486A/µs, V DD V (BR)DSS, T J 75 C Pulse width 400µs; duty cycle 2%. 2
3 IRFP260MPbF I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 75 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 75 C T J = 25 C V DS= 50V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 3.5 I D = 50A V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance(pF) IRFP260MPbF Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V GS, Gate-to-Source Voltage (V) I D = 28A V DS= 60V V DS= 0V V DS= 40V V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 00 0 T J = 75 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms TC = 25 C ms TJ = 75 C Single Pulse 0 00 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 IRFP260MPbF I D, Drain Current (A) I D, Drain Current (A) R D V DS V GS D.U.T. R G V Pulse Width µs Duty Factor 0. % Fig a. Switching Time Test Circuit V DS 90% V - DD T C, Case Temperature ( C) T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms Thermal Response(Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t Peak T J= P DM x Z thjc TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 IRFP260MPbF 5V V DS L DRIVER R G D.U.T IAS - V DD A 20V tp 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS tp E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D A 20A 28A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF V Q GS Q GD D.U.T. V - DS V GS V G 3mA Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 3b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit IRFP260MPbF D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFETS 7
8 IRFP260MPbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) ( ( 4 ( ; ' % / / 6(( 9,(:% [E [E % F E H [ /('7,3 3 % 6 ' 9,(:% 7(50/3' 3/7,* %6(0(7/ ( F % 9,(: EEE 6(&7,2&&''(( TO-247AC Part Marking UCDTDT6IDSAQ@" XDUC6TT@H7G` Q6SUIVH7@S GPU8P9@%& DIU@SI6UDPI6G 6TT@H7G@9PIXX"! DIUC@6TT@H7G`GDI@C S@8UDAD@S GPBP,5)3( 96U@8P9@ I r)qv h r iy yv rƒ v v v qvph r GrhqA rr 6TT@H7G` GPU8P9@ `@6S 2! X@@F" GDI@C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.03/20 8
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
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PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
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PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRFZ48R. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.018Ω I D = 50*A. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
More informationAbsolute Maximum Ratings
l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.0
PD 97323 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRFP4410ZPbF HEXFET Power MOSFET
PD 9739A IRFP44ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationParameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationV DSS R DS(on) max (mω)
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationl Advanced Process Technology TO-220AB IRF640NPbF
查询 IRF640NLPBF 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD - 94008A IRFP250N HEXFET Power MOSFET Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Ease of Paraeing Simpe Drive Requirements G D S V DSS
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
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