V DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET

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1 HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G PD IRFL9014PbF D S V DSS = -60V R DS(on) = 0.50Ω I D = -1.8A The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application. Absolute Maximum Ratings SOT-223 Parameter Max. Units I Tc = 25 C Continuous Drain Current, V -10 V -1.8 I Tc = 100 C Continuous Drain Current, V -10 V -1.1 I DM Pulsed Drain Current -14 A P = 25 C Power Dissipation 3.1 P A = 25 C Power Dissipation (PCB Mount)** 2.0 W Linear Derating Factor Linear Derating Factor (PCB Mount)** W/ C V GS Gate-to-Source Voltage -/+20 V E AS Single Pulse Avalanche Energy 140 mj I AR Avalanche Current -1.8 A E AR Repetitive Avalanche Energy 0.31 mj dv/dt Peak Diode Recovery dv/dt ƒ -4.5 V/ns T J, T STG Junction and Storage Temperature Range -55 to Soldewring Temperature, for 10 seconds 300 (1.6mm from case) C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-PCB 40 C/W R θja Junction-to-Ambient. (PCB Mount)** 60 ** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN /20/04

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -60 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 0.50 Ω V GS = -10V, I D = 1.1A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA g fs Forward Transconductance 1.3 S V DS = -25V, I D = 1.1A I DSS Drain-to-Source Leakage Current -100 V DS = -60V, V GS = 0V µa -500 V DS = -48V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage -100 V GS = -20V na Gate-to-Source Reverse Leakage 100 V GS = 20V Q g Total Gate Charge 12 I D =-6.7A Q gs Gate-to-Source Charge 3.8 nc V DS =-48V Q gd Gate-to-Drain ("Miller") Charge 5.1 V GS = -10V, See Fig. 6 and 13 t d(on) Turn-On Delay Time 11 V DD = -30V t r Rise Time 63 I D = -6.7A ns t d(off) Turn-Off Delay Time 9.6 R G = 24 Ω t f Fall Time 31 R D = 4.0 Ω, See Fig. 10 L D Internal Drain Inductance 4.0 L S Internal Source Inductance 6.0 C iss Input Capacitance 270 V GS = 0V C oss Output Capacitance 170 pf V DS = 25V C rss Reverse Transfer Capacitance 31 ƒ = 1.0MHz, See Fig. 5 nh Between lead, 6mm(0.25in) from package and center of die contact. G D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -1 8 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse -14 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -5.5 V T J = 25 C, I S = -1.8A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F =-6.7A Q rr Reverse RecoveryCharge µc di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ I SD -6 7A, di/dt 90A/µs, V DD V (BR)DSS, T J 150 C V DD= -25V, starting T J = 25 C, L =50 mh R G = 25Ω, I AS = -1.8A. (See Figure 12) Pulse width 300µs; duty cycle 2%. 2

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7 SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 INTERNATIONAL RECTIFIER LOGO FL P TOP PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) LOT CODE A = ASSEMBLY SITE CODE AXXXX BOTTOM 7

8 SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) TR 2.05 (.080) 1.95 (.077) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) (.641) (.619) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION (.475) (.469) 7.10 (.279) 6.90 (.272) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA EACH O (13.00) REEL CONTAINS 2,500 DEVICES (.519) (.504) (.607) (.469) (13.000) MAX (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.566) (.488) (.724) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information.04/04 8

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