V DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET
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1 HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G PD IRFL9014PbF D S V DSS = -60V R DS(on) = 0.50Ω I D = -1.8A The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application. Absolute Maximum Ratings SOT-223 Parameter Max. Units I Tc = 25 C Continuous Drain Current, V -10 V -1.8 I Tc = 100 C Continuous Drain Current, V -10 V -1.1 I DM Pulsed Drain Current -14 A P = 25 C Power Dissipation 3.1 P A = 25 C Power Dissipation (PCB Mount)** 2.0 W Linear Derating Factor Linear Derating Factor (PCB Mount)** W/ C V GS Gate-to-Source Voltage -/+20 V E AS Single Pulse Avalanche Energy 140 mj I AR Avalanche Current -1.8 A E AR Repetitive Avalanche Energy 0.31 mj dv/dt Peak Diode Recovery dv/dt ƒ -4.5 V/ns T J, T STG Junction and Storage Temperature Range -55 to Soldewring Temperature, for 10 seconds 300 (1.6mm from case) C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-PCB 40 C/W R θja Junction-to-Ambient. (PCB Mount)** 60 ** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN /20/04
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -60 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 0.50 Ω V GS = -10V, I D = 1.1A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA g fs Forward Transconductance 1.3 S V DS = -25V, I D = 1.1A I DSS Drain-to-Source Leakage Current -100 V DS = -60V, V GS = 0V µa -500 V DS = -48V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage -100 V GS = -20V na Gate-to-Source Reverse Leakage 100 V GS = 20V Q g Total Gate Charge 12 I D =-6.7A Q gs Gate-to-Source Charge 3.8 nc V DS =-48V Q gd Gate-to-Drain ("Miller") Charge 5.1 V GS = -10V, See Fig. 6 and 13 t d(on) Turn-On Delay Time 11 V DD = -30V t r Rise Time 63 I D = -6.7A ns t d(off) Turn-Off Delay Time 9.6 R G = 24 Ω t f Fall Time 31 R D = 4.0 Ω, See Fig. 10 L D Internal Drain Inductance 4.0 L S Internal Source Inductance 6.0 C iss Input Capacitance 270 V GS = 0V C oss Output Capacitance 170 pf V DS = 25V C rss Reverse Transfer Capacitance 31 ƒ = 1.0MHz, See Fig. 5 nh Between lead, 6mm(0.25in) from package and center of die contact. G D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -1 8 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse -14 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -5.5 V T J = 25 C, I S = -1.8A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F =-6.7A Q rr Reverse RecoveryCharge µc di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ I SD -6 7A, di/dt 90A/µs, V DD V (BR)DSS, T J 150 C V DD= -25V, starting T J = 25 C, L =50 mh R G = 25Ω, I AS = -1.8A. (See Figure 12) Pulse width 300µs; duty cycle 2%. 2
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7 SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 INTERNATIONAL RECTIFIER LOGO FL P TOP PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) LOT CODE A = ASSEMBLY SITE CODE AXXXX BOTTOM 7
8 SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) TR 2.05 (.080) 1.95 (.077) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) (.641) (.619) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION (.475) (.469) 7.10 (.279) 6.90 (.272) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA EACH O (13.00) REEL CONTAINS 2,500 DEVICES (.519) (.504) (.607) (.469) (13.000) MAX (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.566) (.488) (.724) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information.04/04 8
V DSS R DS(on) max I D
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Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94114 IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationIRF1704 Benefits AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationV DSS R DS(on) max I D 80V GS = 10V 3.6A
HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 80V 73m:@ = 0V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized
More informationIRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View
l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More information