IRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View

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1 l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S G S2 G2 PD IRF7342 HEXFET Power MOSFET D D D2 D2 Top View V DSS = -55V R DS(on) = 0.05Ω The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Absolute Maximum Ratings SO-8 Parameter Max. Units V DS Drain- Source Voltage -55 V I T C = 25 C Continuous Drain Current, V 0V -3.4 I T C = 70 C Continuous Drain Current, V 0V -2.7 A I DM Pulsed Drain Current -27 P C = 25 C Power Dissipation 2.0 P C = 70 C Power Dissipation.3 W Linear Derating Factor 0.06 W/ C V GS Gate-to-Source Voltage ± 20 V V GSM Gate-to-Source Voltage Single Pulse tp<0µs 30 V E AS Single Pulse Avalanche Energy 4 dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Typ. Max. Units R θja Maximum Junction-to-Ambient 62.5 C/W 2/24/99

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -55 V V GS = 0V, I D = -250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = -ma V GS = -0V, I D = -3.4A R DS(on) Static Drain-to-Source On-Resistance Ω V GS = -4.5V, I D = -2.7A V GS(th) Gate Threshold Voltage -.0 V V DS = V GS, I D = -250µA g fs Forward Transconductance 3.3 S V DS = -0V, I D = -3.A I DSS Drain-to-Source Leakage Current -2.0 V DS = -55V, V GS = 0V µa -25 V DS = -55V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage - V GS = -20V na Gate-to-Source Reverse Leakage V GS = 20V Q g Total Gate Charge I D = -3.A Q gs Gate-to-Source Charge nc V DS = -44V Q gd Gate-to-Drain ("Miller") Charge V GS = -0V, See Fig. 0 t d(on) Turn-On Delay Time 4 22 V DD = -28V t r Rise Time 0 5 I D = -.0A ns t d(off) Turn-Off Delay Time R G = 6.0Ω t f Fall Time R D = 6Ω, C iss Input Capacitance 690 V GS = 0V C oss Output Capacitance 20 pf V DS = -25V C rss Reverse Transfer Capacitance 86 ƒ =.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.0 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -27 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -2.0A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = -2.0A Q rr Reverse RecoveryCharge nc di/dt = -A/µs ƒ D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 20mH R G = 25Ω, I AS = -3.4A. (See Figure 8) ƒ I SD -3.4A, di/dt -50A/µs, V DD V (BR)DSS, T J 50 C Pulse width 300µs; duty cycle 2%. When mounted on inch square copper board, t<0 sec 2

3 -I D, Drain-to-Source Current (A) 0 VGS TOP -5V -2V -0V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V -3.0V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) 0 VGS TOP -5V -2V -0V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V -3.0V 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 25 C T J = 50 C -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V DS = -25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) V GS = 0 V V SD,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage 3

4 R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = -3.4 A V GS = -0V T J, Junction Temperature ( C) (Ω) R DS (on), Drain-to-Source On Resistance VGS = -4.5V VGS = -0V I D, Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS(on), Drain-to-Source On Resistance ( Ω ) I D = -3.4 A 0.05 A V GS, Gate-to-Source Voltage (V) E AS, Single Pulse Avalanche Energy (mj) I D TOP -.5A -2.7A BOTTOM -3.4A Starting T, Junction Temperature ( J C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4

5 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED -V GS, Gate-to-Source Voltage (V) I D = -3.A V DS =-48V V DS =-30V V DS =-2V V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 0. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thja ) 0 D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + TA t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 SO-8 Package Details 5 E - A - e 6X D - B e H 0.25 (.00) M A M A - C (.004) A B 0.25 (.00) M C A S B S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M CONTROLLING DIMENSION : INCH. 3. DIM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES). 4. OUTLINE CONFORM S TO JEDEC OUTLINE MS-02AA. θ L K x 45 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. θ 6 C DIM INCH ES M ILLIMET ERS MIN MAX MIN M AX A A B C D E e.050 BASIC.27 BASIC e.025 BASIC BASIC H K L θ RECOMMENDED FOOTPRINT 0.72 (.028 ) 6.46 (.255 ).27 (.050 ) 3X.78 (.070) Part Marking 6

7 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Tel: Data and specifications subject to change without notice. 2/99 7