Parameter Typ. Max. Units R qja Junction-to-Amb. (PCB Mount, steady state)* R qja Junction-to-Amb. (PCB Mount, steady state)** 48 60

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1 PD B IRFL4310 HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paraeing Advanced Process Technoogy Utra Low On-Resistance Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G D S V DSS = 100V R DS(on) = 0.20W I D = 1.6A The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave sodering techniques. Its unique package design aows for easy automatic pickand-pace as with other SOT or SOIC packages but has SOT-223 the added advantage of improved therma performance due to an enarged tab for heatsinking. Power dissipation of 1.0W is possibe in a typica surface mount appication. Absoute Maximum Ratings Parameter Max. Units I T A = 25 C Continuous Drain Current, V 10V** 2.2 I T A = 25 C Continuous Drain Current, V 10V* 1.6 I T A = 70 C Continuous Drain Current, V 10V* 1.3 A I DM Pused Drain Current 13 P A = 25 C Power Dissipation (PCB Mount)** 2.1 W P A = 25 C Power Dissipation (PCB Mount)* 1.0 W Linear Derating Factor (PCB Mount)* 8.3 mw/ C V GS Gate-to-Source Votage ± 20 V E AS Singe Puse Avaanche Energy 47 mj I AR Avaanche Current 1.6 A E AR Repetitive Avaanche Energy * 0.10 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to C Therma Resistance Parameter Typ. Max. Units R qja Junction-to-Amb. (PCB Mount, steady state)* R qja Junction-to-Amb. (PCB Mount, steady state)** C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices /11/99

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 100 V V GS = 0V, I D = 250µA DV (BR)DSS/DT J Breakdown Votage Temp. Coefficient 0.12 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 0.20 W V GS = 10V, I D = 1.6A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 1.5 S V DS = 50V, I D = 0.80 A I DSS Drain-to-Source Leakage Current 25 V DS = 100V, V GS = 0V µa 250 V DS = 80V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 100 V GS = 20V na Gate-to-Source Reverse Leakage -100 V GS = -20V Q g Tota Gate Charge I D = 1.6A Q gs Gate-to-Source Charge nc V DS = 80V Q gd Gate-to-Drain ("Mier") Charge V GS = 10V, See Fig. 6 and 13 t d(on) Turn-On Deay Time 7.8 V DD = 50V t r Rise Time 18 I D = 1.6A ns t d(off) Turn-Off Deay Time 34 R G = 6.2 W t f Fa Time 20 R D = 31 W, See Fig. 10 C iss Input Capacitance 330 V GS = 0V C oss Output Capacitance 92 pf V DS = 25V C rss Reverse Transfer Capacitance 54 ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 0.91 (Body Diode) showing the A I SM Pused Source Current integra reverse 13 (Body Diode) p-n junction diode. V SD Diode Forward Votage 1.3 V T J = 25 C, I S = 1.6A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 1.6A Q rr Reverse RecoveryCharge nc di/dt = 100A/µs Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 11 ) ƒ I SD 1.6A, di/dt 340A/µs, V DD V (BR)DSS, T J 150 C V DD = 25V, starting T J = 25 C, L = 9.2 mh R G = 25W, I AS = 3.2A. (See Figure 12) Puse width 300µs; duty cyce 2%. 2

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8 Package Outine SOT-223 (TO-261AA) Outine Part Marking Information SOT-223 EXAMPLE : THIS IS AN IRFL014 INTERNATIONAL RECTIFIER LOGO FL TOP PART NUMBER WAFER LOT CODE DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK XXXXXX BOTTOM 8

9 Tape & Ree Information SOT-223 Outine TR 2.05 (.080) 1.95 (.077) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) (.641) (.619) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION (.475) (.469) 7.10 (.279) 6.90 (.272) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA EACH O (13.00) REEL CONTAINS 2,500 DEVICES (.519) (.504) (.607) (.469) (13.000) MAX (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.566) (.488) (.724) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (310) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CANADA: 15 Lincon Court, Brampton, Ontario L6T3Z2, Te: (905) IR GERMANY: Saaburgstrasse 157, Bad Homburg Te: IR ITALY: Via Liguria 49, Borgaro, Torino Te: IR FAR EAST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Te: IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great Word City West Tower, 13-11, Singapore Te: IR TAIWAN:16 F. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Te: Data and specifications subject to change without notice. 5/99 9