C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance
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1 PD HEXFET Power MOSFET dvanced Process Technoogy Surface Mount (IRF530NS) Low-profie through-hoe (IRF530NL) 75 C Operating Temperature Fast Switching Fuy vaanche Rated G D S V DSS =V R DS(on) = 0.Ω I D = 7 Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The D 2 Pak is a surface mount power package capabe of accommodating die sizes up to HEX-4. It provides the highest power capabiity and the owest possibe on-resistance in any existing surface mount package. The D 2 Pak is suitabe for high current appications because of its ow interna connection resistance and can dissipate up to 2.0W in a typica surface mount appication. The through-hoe version (IRF530NL) is avaiabe for ow-profie appications. 2 D Pak TO-262 bsoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 7 I T C = C Continuous Drain Current, V V 2 I DM Pused Drain Current 60 P = 25 C Power Dissipation 3.8 W P C = 25 C Power Dissipation 79 W Linear Derating Factor 0.53 W/ C V GS Gate-to-Source Votage ± 20 V E S Singe Puse vaanche Energy 50 mj I R vaanche Current 9.0 E R Repetitive vaanche Energy 7.9 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case.9 R θj Junction-to-mbient ( PCB Mounted,steady-state)** 40 C/W 5/3/98
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage V V GS = 0V, I D = 250µ DV (BR)DSS /DT J Breakdown Votage Temp. Coefficient 0.2 V/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance 0. Ω V GS = V, I D = 9.0 V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µ g fs Forward Transconductance 6.4 S V DS = 50V, I D = 9.0 I DSS Drain-to-Source Leakage Current 25 V µ DS = V, V GS = 0V 250 V DS = 80V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage V GS = 20V n Gate-to-Source Reverse Leakage - V GS = -20V Q g Tota Gate Charge 44 I D = 9.0 Q gs Gate-to-Source Charge 6.2 nc V DS = 80V Q gd Gate-to-Drain ("Mier") Charge 2 V GS = V, See Fig. 6 and 3 t d(on) Turn-On Deay Time 6.4 V DD = 50V t r Rise Time 27 I D = 9.0 ns t d(off) Turn-Off Deay Time 37 R G = 2Ω t f Fa Time 25 R D = 5.5Ω, See Fig. L S Interna Source Inductance 7.5 nh Between ead, and center of die contact C iss Input Capacitance 640 V GS = 0V C oss Output Capacitance 60 pf V DS = 25V C rss Reverse Transfer Capacitance 88 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 7 (Body Diode) showing the G I SM Pused Source Current integra reverse 60 (Body Diode) p-n junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 9.0, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 9.0 Q rr Reverse Recovery Charge nc di/dt = /µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 3.mH R G = 25W, I S = 9.0. (See Figure 2) ƒ I SD 9.0, di/dt 80/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%. Uses IRF530N data and test conditions ** When mounted on " square PCB ( FR-4 or G- Materia ). For recommended sodering techniques refer to appication note #N
3 I, Drain-to-Source Current () D VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, Drain-to-Source Current () D VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics 20µs PULSE WIDTH T J = 75 C 0. V DS, Drain-to-Source Votage (V) Fig 2. Typica Output Characteristics I D, Drain-to-Source Current () T = 25 C J V DS= 50V 20µs PULSE W IDTH V GS T = 75 C J, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) I D = 5 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 0 V DS, Drain-to-Source Votage (V) V, Gate-to-Source Votage (V) GS I = 9.0 D V DS = 80V V DS = 50V V DS = 20V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current () T = 75 C J T = 25 C J V GS = 0V V SD, Source-to-Drain Votage (V) I D, Drain Current () 0 OPERTION IN THIS RE LIMITED BY R DS(on) µs µs ms T C = 25 C T J = 75 C Singe P u se ms 0 V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating rea 4
5 I D, Drain Current () Fig a. Switching Time Test Circuit V DS 90% R G V GS V V DS Puse Width µs Duty Factor 0. % R D D.U.T. - V DD T, Case Temperature ( C C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therma Response (Z thjc ) 0. D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case 5
6 L V DS D.U.T. R G V - DD V I S t p 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)DSS t p V DD V DS E S, Singe Puse vaanche Energy (mj) I D TOP BOTTOM 9.0 V DD = 25V Starting T J, Junction Temperature ( C) I S Fig 2b. Uncamped Inductive Waveforms Fig 2c. Maximum vaanche Energy Vs. Drain Current Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF V Q GS Q GD D.U.T. V - DS V GS V G 3m Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 3b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-ppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For N-Channe HEXFETS 7
8 D 2 Pak Package Outine.40 (.055) M X..54 (.45).29 (.405) (.85) 4.20 (.65) - B -.32 (.052).22 (.048).6 (.400) REF (.255) 6.8 (.243).78 (.070).27 (.050) (.6) 4.73 (.580) 2.79 (.) 2.29 (.090) 5.28 (.208) 4.78 (.88) 2.6 (.3) 2.32 (.09) 3X.40 (.055).4 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.08).39 (.055).4 (.045) 8.89 (.350) REF (.0) M B M MINIMUM RECOMMENDED FOOTPRINT.43 (.450) NOTES: DIMENSIONS FTER SOLDER DIP. 2 DIMENSIONING & TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION : INCH. 4 HETSINK & LED DIMENSIONS DO NOT INCLUDE BURRS. LED SSIGNMENTS - GTE 2 - DRIN 3 - SOURCE 8.89 (.350) 3.8 (.50) 7.78 (.700) 2.08 (.082) 2X 2.54 (.) 2X Part Marking Information D 2 Pak INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE F530S B M PRT NUMBER DTE CODE (YYW W ) YY = YER WW = WEEK 8
9 Package Outine TO-262 Outine Part Marking Information TO
10 Tape & Ree Information D 2 Pak TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION.85 (.073).65 (.065).60 (.457).40 (.449) 5.42 (.609) 5.22 (.60) (.957) (.94) TRL.90 (.429).70 (.42) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MX (2.362) MIN. NOTES :. COMFORMS TO EI CO N TR O LLING DIM ENSIO N : M ILLIM ETER. 3. DIMENSION HUB. 4. INCLUDES FLNGE OUTER EDGE (.039) (.96) (.97) MX. 4 WORLD HEDQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CND: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 7 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Buiding, Singapore 036 Te: Data and specifications subject to change without notice. 5/98
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationIRFP254N. HEXFET Power MOSFET V DSS = 250V. R DS(on) = 125mΩ I D = 23A
PD 9423 HEXFET Power MOSFET Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Ease of Paraeing Simpe Drive Requirements G D S V DSS = 250V R DS(on)
More informationIRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
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HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationIRF530N. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 90mΩ I D = 17A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
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Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationV DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Appications High frequency DC-DC converters Pasma Dispay Pane Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design, (See
More informationIRFR/U5505. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.11Ω I D = -18A
Utra Low OnResistance PChanne Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technoogy Fast Switching Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier
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Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationIRFZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 17.5mΩ I D = 49A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
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SMPS MOSFET PD - 95902 IRFBA90N20DPbF HEXFET Power MOSFET Appications High frequency DC-DC converters Lead-Free V DSS R DS(on) max I D 200V 0.023Ω 98A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationIRLI620G PD HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.80Ω I D = 4.0A
HEXFET Power MOSFET PD - 9.235 IRLI620G Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive R DS(ON) Specified at V GS = 4V & 5V Fast Switching Ease
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationLinear Derating Factor 0.01 W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationV DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A
PD - 90861B IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
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Appications Synchronous Rectification Active ORing Lead-Free SMPS MOSFET PD - 95481 IRFP3703PbF HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits Utra Low On-Resistance Low Gate Impedance
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
More informationTO-220AB contribute to its wide acceptance throughout the industry.
dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
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l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
More informationFB180SA10. HEXFET Power MOSFET V DSS = 100V. R DS(on) = W I D = 180A
PD 965C FB80SA0 Fuy Isoated Package Easy to Use and Parae Very Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Drain to Case Capacitance Low Interna Inductance G D
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l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
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PD 94208 SMPS MOSFET IRFB42N20D Appications High frequency DCDC converters Motor Contro Uninterrutibe Power Suppies HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 44A Benefits Low GatetoDrain Charge
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Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie ( mm) vaiabe in Tape and Ree Fast Switching S escription Fifth Generation HEXFETs from Internationa Rectifier utiize
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P - 9.26 Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET Very Sma SOIC Package Low Profie (
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
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HEXFET Power MOSFET P - 9576 IRF730PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching Lead-Free escription Fifth
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
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HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
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Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9878C IRF830 HEXFET Power MOSFET V DSS Rds(on) max I D 500V.40Ω 5.0 Benefits l
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l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
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l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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