IRLZ44N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 47A
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1 Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve the owest possibe on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient device for use in a wide variety of appications. G P B IRLZ44N HEXFET Power MOSFET S V SS = 55V R S(on) = 0.022Ω I = 47 The TO-220 package is universay preferred for a commercia-industria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance TO-220B and ow package cost of the TO-220 contribute to its wide acceptance throughout the industry. bsoute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V V 47 T C = 0 C Continuous rain Current, V V 33 I M Pused rain Current 60 C = 25 C Power issipation W Linear erating Factor 0.7 W/ C V GS Gate-to-Source Votage ±6 V E S Singe Puse vaanche Energy 2 mj I R vaanche Current 25 E R Repetitive vaanche Energy mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case) Mounting torque, 6-32 or M3 screw. bf in (.N m) Therma Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case.4 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 8/25/97
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m V GS = V, I = 25 R S(on) Static rain-to-source On-Resistance Ω V GS = 5.0V, I = V GS = 4.0V, I = 2 V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ g fs Forward Transconductance 2 S V S = 25V, I = 25 I SS rain-to-source Leakage Current 25 V S = 55V, V GS = 0V µ 250 V S = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 6V n Gate-to-Source Reverse Leakage -0 V GS = -6V Q g Tota Gate Charge 48 I = 25 Q gs Gate-to-Source Charge 8.6 nc V S = 44V Q gd Gate-to-rain ("Mier") Charge 25 V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On eay Time V = 28V t r Rise Time 84 I = 25 ns t d(off) Turn-Off eay Time 26 R G = 3.4Ω, V GS = 5.0V t f Fa Time 5 R =.Ω, See Fig. Between ead, L Interna rain Inductance 4.5 6mm (0.25in.) nh from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 400 pf V S = 25V C rss Reverse Transfer Capacitance 50 ƒ =.0MHz, See Fig. 5 G S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 47 (Body iode) showing the G I SM Pused Source Current integra reverse 60 (Body iode) p-n junction diode. V S iode Forward Votage.3 V T J = 25 C, I S = 25, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 25 Q rr Reverse RecoveryCharge nc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L ) S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) V = 25V, starting T J = 25 C, L = 470µH R G = 25Ω, I S = 25. (See Figure 2) ƒ I S 25, di/dt 270/µs, V V (BR)SS, T J 75 C Puse width 300µs; duty cyce 2%.
3 I, rain-to-source Current () 00 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V I, rain-to-source Current () 00 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Votage (V) 20µs PULSE WITH T J = 75 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-s ource C urrent ( ) 00 0 T = 25 C J V S= 25V 20µs PULSE W ITH V GS T = 75 C J, Gate-to-Source Votage (V) R S(on), rain-to-s ource On Resistance (Normaized) I = 4 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature
4 C, Capacitance (pf) 2800 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE 2400 C rss = C gd C is s C oss = C ds C gd C oss 800 C rss V S, rain-to-source Votage (V) V GS, Gate-to-Source Votage (V) I = 25 V S = 44V V S = 28V FOR TEST CIRCUIT SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J I, rain Current () 00 0 OPE RTION IN THIS RE LIMITE BY RS(on) µs 0µs ms V GS = 0V V S, Source-to-rain Votage (V) T C = 25 C ms T J = 75 C Singe Puse 0 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea
5 50 V S R I, rain Current () T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V S 90% R G V GS 5.0V Puse Width µs uty Factor 0. %.U.T. % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms - V Therma Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t Peak T J= P M x Z thjc TC t, Rectanguar Puse uration (sec) PM t t 2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case
6 L V S.U.T. R G V V I S t p 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)SS t p V V S E S, Singe Puse vaanche Energy (mj) TOP BOTTOM V = 25V Starting T J, Junction Temperature ( C) Fig 2c. Maximum vaanche Energy Vs. rain Current I 7 25 I S Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q G.U.T. V - S V GS V G 3m Charge I G I Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 4. For N-Channe HEXFETS
8 Package Outine TO-220B Outine imensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.3) (.4 5) (.40 5) 3.78 (.4 9) 3.54 (.3 9) (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.25 5) 6. 0 (.24 0) (.0 4 5) M IN LE SSIGNMENTS - G TE 2 - R IN 3 - SOURCE 4 - R IN 4.09 (.555) 3.47 (.530) (.6 0) (.4 0).40 (.055) 3X.5 (.045) 2.54 (.0) 2X 3X 0.93 (.037) 0.69 (.027) (.0 4) M B M (.02 2) 3X (.0 8) 2.92 (.5) 2.64 (.4) NOTES: IM E N S IO N IN G & TO L ER N C IN G P ER N S I Y 4.5 M, O U TL IN E C O N FO R M S TO JE E C OU T LIN E TO B. 2 CONTR OLLING IMENSION : INCH 4 HETSIN K & LE M ESUREMENTS O NOT INCLUE BU RRS. Part Marking Information TO-220B EXMPLE : THIS IS N IRF WITH SSEMBLY LOT COE 9BM INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE IRF B M PRT NUMBER TE COE (YYW W) YY = YER WW = WEEK WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Buiding, Singapore 036 Te: ata and specifications subject to change without notice. 8/97
9 Note: For the most current drawings pease refer to the IR website at:
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth
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Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
More informationW Linear Derating Factor 0.016
HEXFET Power MOSFET l Generation V Technology l Ultra Low OnResistance 8 S l ual PChannel Mosfet 2 7 G l Surface Mount l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
More informationPRELIMINARY. Symbol Maximum Units N-Channel P-Channel Drain-Source Voltage V DS Gate-Source Voltage V GS ± 20 T A = 25 C 2.
l l l l l Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET Surface Mount Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing
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l l l l l dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
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HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
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Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive
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l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
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l dvanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from
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PD 9423 HEXFET Power MOSFET Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Ease of Paraeing Simpe Drive Requirements G D S V DSS = 250V R DS(on)
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l dvanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Surface Mount (IRF9Z34NS) l Lowprofile throughhole (IRF9Z34NL) l 175 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription G P 9.1525 IRF9Z34NS/L
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l LogicLevel Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
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P 9.44B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) PChannel MOSFET 2 6 5 V SS = 20V escription Fifth Generation HEXFETs from International Rectifier
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Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay
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PD 965C FB80SA0 Fuy Isoated Package Easy to Use and Parae Very Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Drain to Case Capacitance Low Interna Inductance G D
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